Texas Instruments Corporation

The University of Texas System

Other

Advanced Technology Materials, Inc.

University of North Texas

Texas Micropower Inc.

Zyvex Corporation

Nanoholdings, LLC

Bruce E Gnade

Chih-Chen Cho

Douglas M Smith

Scott Robert Summerfelt

Jules D Levine

Robert M Wallace

Shin-Puu Jeng

Chi-Cheong Shen

Howard R Beratan

William C Ackerman

Kenneth G Vickers

Robert H Taylor

Gregory P Johnston

Robert H Havemann

Peter S Kirlin

Chi-Chen Cho

Richard A Stoltz

Teresa A Ramos

Arthur M Wilson

Alok Maskara

Kenneth J Balkus, Jr

Douglas A Webb

Charles E Primm

Manuel A Quevedo-Lopez

Wiley P Kirk

Erika Fuentes-Fernandez

Pradeep Shah

Jin Changming

Gregory C Johnston

Wardia Mechtaly-Debray

Christopher L Littler

Russell F Pinizzotto

Daron G Evans

Scott J Riley

Tae S Kim

John H Tregilgas

Bhabendra K Pradhan

Yasushiro Nishioka

Dennis I Robbins

John Mark Anthony

Yasutoshi Okuno

Leigh Ann Files

Hung-Yu Liu

Johnson J Lin

Joseph A Keenan

Carlos Hugo Avila Avendano

Fadziso Mantiziba

Mohamed El Bouanani

Charies E Primm

Joe X Zhou

Sunil V Hanttangady

Jesus I Mejia-Silva

Igor Gory

Manuel Quevedo-Lopez

Jesus I Mejia Silva

A thin film radiation detection device includes a photosensitive p-n diode, a polysilicon thin film transistor (TFT), a radiation detection layer, and a substrate. The photosensitive p-n diode and the TFT are formed on the substrate. The radiation detection layer is formed above the substrate and receives multiple radiations. The photosensitive p-n diode receives a conversion output signal from the radiation detection layer and generates a detector signal. The TFT generates an amplified signal based on the detector signal.

Method for the integration of monolithic thin film radiation detector systems

The claimed invention is directed to integrated energy-harvesting piezoelectric cantilevers. The cantilevers are fabricated using sol-gel processing using a sacrificial poly-Si seeding layer. Improvements in film microstructure and electrical properties are realized by introducing a poly-Si seeding layer and by optimizing the poling process.

MEMs-based cantilever energy harvester

Ribbons containing e.g. inorganic NMOS devices are assembled in electrical contact with ribbons containing e.g. PMOS devices (preferably organic) to enable flexible electronic textile circuits to be inexpensive and practical for a wide variety of functions. The use of ribbons provides flexibility, reduces costs, and allows testing during assembly and different processes to be efficiently used for different components. This is apparently the first time that ribbons (especially inorganic-device-containing ribbons) have been interconnected to form a flexible CMOS electronic textile.

Electronic textiles with electronic devices on ribbons

Ribbons containing e.g. inorganic NMOS devices are assembled in electrical contact with ribbons containing e.g. PMOS devices (preferably organic) to enable flexible electronic textile circuits, e.g. displays, to be inexpensive and practical for a wide for a variety of functions. The use of ribbons provides flexibility, reduces costs, and allows testing during assembly and different processes to be efficiently used for different components. This is apparently the first time that ribbons (especially inorganic-device-containing ribbons) have been interconnected to form a flexible CMOS electronic textile.

Method of assembling a textile display

Method of manufacturing resistance film heating apparatus

Method of assembling an electronic textile

A method is provided, the method comprising operating a field emitter array (FEA) to generate at least one of a high electric field and a high electron flux, and exposing the field emitter array (FEA) to at least one gas. The method further comprises generating at least one radical species from the at least one gas exposed to the at least one of the high electric field and the high electron flux.

Method for using field emitter arrays in chemical and biological hazard mitigation and remediation

A method of releasing a micro-electronic device formed over an insulator of a silicon-on-insulator (SOI) substrate. In one embodiment, the release method includes etching at least a portion of the insulator to separate the micro-electronic device from the SOI substrate, rinsing at least the micro-electronic device, exposing at least the micro-electronic device to a micro-sphere solution and removing the micro-electronic device from the SOI substrate. The release method may also include exposing the micro-electronic device to an etching plasma to substantially expunge the micro-sphere solution.

Stiction resistant release process

A method of processing a substrate is disclosed. The method includes depositing a dielectric layer having a metal oxide on a substrate. A portion of the dielectric layer is removed to form a dielectric structure, thereby exposing a surface of the substrate. For example, the dielectric layer may be patterned using standard photolithographic techniques and etching. An oxide layer is then formed on the exposed surface of the substrate. The oxide layer may be formed using ozone that is generated using ultraviolet radiation. After the oxide layer is formed, it is removed using an etching process.

Method for removing contaminants on a substrate

CMOS and BiCMOS structures with a silicate-germanate gate dielectric on SiGe PMOS areas and Si NMOS areas plus HBTs with Si&mdash;SiGe emitter-base junctions.

Gate structure and method

This invention has enabled a new, simple thin film nanoporous dielectric fabrication method. In general, this invention uses glycerol, or another low volatility compound, as a solvent. This new method allows thin film aerogels/low density xerogels to be made without supercritical drying, freeze drying, or a surface modification step before drying. Thus, this invention allows production of nanoporous dielectrics at room temperature and atmospheric pressure, without a separate surface modification step. Although this new method allows fabrication of aerogels without substantial pore collapse during drying, there may be some permanent shrinkage during aging and/or drying. This invention allows controlled porosity thin film nanoporous aerogels to be deposited, gelled, aged, and dried without atmospheric controls. In another aspect, this invention allows controlled porosity thin film nanoporous aerogels to be deposited, gelled, rapidly aged at an elevated temperature, and dried with only passive atmospheric controls, such as limiting the volume of the aging chamber.

Low volatility solvent-based method for forming thin film nanoporous aerogels on semiconductor substrates

A preferred embodiment of this invention comprises a conductive lightly donor doped perovskite layer (e.g. lightly La doped BST ), and a high-dielectric-constant material layer (e.g. undoped BST ) overlaying the conductive lightly donor doped perovskite layer. The conductive lightly donor doped perovskite layer provides a substantially chemically and structurally stable electrical connection to the high-dielectric-constant material layer. A lightly donor doped perovskite generally has much less resistance than undoped, acceptor doped, or heavily donor doped HDC materials. The amount of donor doping to make the material conductive (or resistive) is normally dependent on the process conditions (e.g. temperature, atmosphere, grain size, film thickness and composition). This resistivity may be further decreased if the perovskite is exposed to reducing conditions. The lightly donor doped perovskite can be deposited and etched by effectively the same techniques that are developed for the high-dielectric-constant material. The same equipment may used to deposit and etch both the perovskite electrode and the dielectric. These structures may also be used for multilayer capacitors and other thin-film ferroelectric devices such as pyroelectric materials, non-volatile memories, thin-film piezoelectric and thin-film electro-optic oxides.

Lightly donor doped electrodes for high-dielectric-constant materials

This invention pertains generally to precursors and deposition methods suited to aerogel thin film fabrication. An aerogel precursor sol which contains an oligomerized metal alkoxide (such as TEOS), a high vapor pressure solvent (such as ethanol) and a low vapor pressure solvent (such as water and 1-butanol) is disclosed. By a method according to the present invention, such a precursor sol is applied as a thin film to a semiconductor wafer, and the high vapor pressure solvent is allowed to evaporate while evaporation of the low vapor pressure solvent is limited, preferably by controlling the atmosphere adjacent to the wafer. The reduced sol is then allowed to gel at a concentration determined by the ratio of metal alkoxide to low vapor pressure solvent. One advantage of the present invention is that it provides a stable, spinnable sol for setting film thickness and providing good planarity and gap fill for patterned wafers. In addition, however, the reduced sol may be gelled rapidly from a known sol concentration keyed to the desired final density of the aerogel thin film and largely independent of film thickness and spin conditions.

Aerogel thin film formation from multi-solvent systems

Growing community of inventors

Dallas, TX, United States of America

Bruce E Gnade