Fairchild Camera and Instrument Corp.

Genus, Inc.

Bruce E Deal

William I Lehrer

Dah-Bin Kao

Michael A McNeilly

Daniel C Hu

A method of selective etching of native oxide on a substrate is disclosed in which hydrogen halide vapor and water vapor are exposed to the substrate surface under appropriate conditions and long enough to remove native oxide but not long enough to remove any significant amount of other oxides. Treating conditions are maintained to prevent water vapor from condensing on the substrate until sufficient native oxide is etched so that substantially all the native oxide will be etched before appreciable other oxides are etched.

Method of selective etching native oxide

An interconnect structure for use in integrated circuits comprises a germanium-silicon binary alloy. Such an alloy is deposited on the semiconductor wafer from the co-deposition of germanium and silicon using chemical vapor deposition techniques of a type commonly used in the semiconductor industry. The resulting alloy can be oxidized, selectively removed and doped with selected impurities to provide a conductive lead pattern of a desired shape on the surface of a wafer.

Binary germanium-silicon interconnect and electrode structure for

A complementary insulated gate field effect transistor structure having complementary p-channel and n-channel devices in the same semiconductor substrate and a process for fabricating the structure incorporate oxide isolation of the active device regions, counterdoping of the p-well with impurities of opposite type to obtain a composite doping profile, reduction of Q.sub.ss in the isolation oxide, doping of the gate and field oxides with a chlorine species and phosphorus doping of the polycrystalline silicon gates.

Growing community of inventors

Palo Alto, CA, United States of America

Bruce E Deal