Crystal Photonics, Inc.

Other

Bruce Chai

Olga Kryliouk

Tim Anderson

Shen Jen

Xiao-mei Pan

Yi-Ting Fei

Bao-hui Zhou

A radiation detector, such as for a PET scanner, may include an array of scintillator crystals, with each scintillator crystal having a polished end, a roughened end opposite the polished end, and polished sides extending between the polished end and the roughened end. The detector may also include a specular reflector layer between adjacent polished sides of adjacent ones of the array of scintillator crystals, and a diffusive reflector layer adjacent the roughened ends of the array of scintillator crystals. The detector may further include at least one photodetector adjacent the polished ends of the array of scintillator crystals.

Apparatus including scintillation crystal array with different reflector layers and associated methods

This invention is related to material for use as an ultraviolet (UV) optical element and particularly for use as a 193 nm immersion lens element. The material for use as a UV optical element includes a Lithium Magnesium Aluminate (LMAO) body. The specific compound for this application is the disordered lithium magnesium spinel, having the general composition of LiMgAlOwhere x=0 to 1 as the high-index UV transparent material for immersion lithography. The LMAO body may include a disordered spinel, such as, for example, a single crystal that may be cubic in symmetry, optically isotropic, and having cation disorder within the structure to reduce the intrinsic birefringence (IBR). The LMAO body has certain desired material properties and may be readily made in relatively large sizes suitable for use as the UV optical element for photolithography.

High-index UV optical materials for immersion lithography

A method for enhancing the light yield of a single crystal of cerium doped lutetium yttrium orthosilicate (LYSO) in response to irradiation with high energy radiation includes diffusing oxygen into the crystal by heating the crystal for a period of time in an ambient containing oxygen. This process of thermal oxygenation of the crystal effectively supplies oxygen to fill at least some of the oxygen vacancies in the body of monocrystalline LYSO. A scintillation detector comprises a monocrystalline body of LYSO enhanced by oxygen diffusion into the crystal.

Method of enhancing performance of cerium doped lutetium yttrium orthosilicate crystals and crystals produced thereby

A method for enhancing the light yield of a single crystal of cerium doped lutetium orthosilicate (LSO) in response to irradiation with high energy radiation includes diffusing oxygen into the crystal by heating the crystal for a period of time in an ambient containing oxygen. This process of thermal oxygenation of the crystal effectively supplies oxygen to fill at least some of the oxygen vacancies in the body of monocrystalline LSO. A scintillation detector comprises a monocrystalline body of LSO enhanced by oxygen diffusion into the crystal.

Method of enhancing performance of cerium doped lutetium orthosilicate crystals and crystals produced thereby

The subject invention pertains to a method and device for producing large area single crystalline III-V nitride compound semiconductor substrates with a composition Al,In,Ga,N (where O&lE;x&lE;1, 0&lE;y&lE;1, and 0&lE;x&plus;y&lE;1). In a specific embodiment, GaN substrates, with low dislocation densities (&tilde;10,cm,) can be produced. These crystalline III-V substrates can be used to fabricate lasers and transistors. Large area free standing single crystals of III-V compounds, for example GaN, can be produced in accordance with the subject invention. By utilizing the rapid growth rates afforded by hydride vapor phase epitaxy (HVPE) and growing on lattice matching orthorhombic structure oxide substrates, good quality III-V crystals can be grown. Examples of oxide substrates include LiGaO,, LiAlO,, MgAlScO,, Al,MgO,, and LiNdO,. The subject invention relates to a method and apparatus, for the deposition of III-V compounds, which can alternate between MOVPE and HVPE, combining the advantages of both. In particular, the subject hybrid reactor can go back and forth between MOVPE and HVPE in situ so that the substrate does not have to be transported between reactor apparatus and, therefore, cooled between the performance of different growth techniques.

Growing community of inventors

Oviedo, FL, United States of America

Bruce Chai