Taiwan Semiconductor Manufacturing Comp. Ltd.

Egis Technology Inc.

Lightuning Tech. Inc.

Aimgene Technology Co., Ltd.

J-metrics Technology Co., Ltd.

May Sun Technology Co., Ltd.

Ligh Tuning Technology Inc.

Solid State System Co., Ltd.

Metrodyne Microsystem Corp.

Bruce C S Chou

Chen-Chih Fan

Jung-Kuo Tu

Jer-Wei Chang

Shin-Puu Jeng

Dun-Nian Yaung

Jen-Cheng Liu

Wen-Chih Chiou

Shang-Yun Hou

Szu-Ying Chen

Cheng-Chieh Hsieh

Tzu-Jui Wang

Sao-Ling Chiu

Ping-Kang Huang

Kuo-Chin Huang

Li-Kuo Chiu

Wallace Y W Cheng

Chia-Shiung Tsai

Chen-Jong Wang

Ping-Yin Liu

Lan-Lin Chao

Xiaomeng Chen

Xin-Hua Huang

Wen Hsin Wei

Tsung-Te Chou

Hsun-Chung Kuang

Wen-Chuan Tai

Chih-Hsien Lin

Hsiang-Fu Chen

Chia-Ming Hung

Hsin-Ting Huang

Allen Timothy Chang

Chen-Hua Lin

Chin-Min Lin

Hsiang-Tai Lu

Shao-Chi Yu

Mingo Liu

Tung-Hung Hsieh

Chang-Chia Chang

Chingfu Tsou

Yu-Hsuan Lin

Yang-Che Chen

Wen-Hsin Wei

Tang-Hung Po

Tong-Long Fu

Tung-Yu Wu

Xin-Chung Kuang

Ming-Lin Tsai

Chen-Hsun Du

Yung-Pin Lee

Ming-Shun Chen

Mao Yuan Ku

Yng-Tsang Chen

Yuan-Wei Cheng

Ching-Fu Tsou

Chih-Hsien Yeh

Ben Chang

Ben S B Chang

Ping-Chin Sun

Hsien-Ming Wu

Chengkuo Lee

The embodiments of the present disclosure provide a biometric detection sensor and a signal processing method thereof. The biometric detection sensor includes an array of detection pixels, the signal processing method includes: acquiring a first detection signal of each detection pixel in the array of detection pixels; for each detection pixel of at least part of detection pixels, processing the first detection signal of the detection pixel based on a reference signal to obtain a detection processing signal of the detection pixel, wherein a resolution of the detection processing signal is lower than that of the first detection signal; and outputting the detection processing signals of the at least part of detection pixels in the array of detection pixels, wherein the detection processing signals are used for biometric identification. The signal processing method can effectively reduce the amount of data for the processor to receive and process during biometric identification.

Biometric detection sensor and signal processing method thereof and electronic product

A light sensing module including a photodiode array substrate, a distance increasing layer, and a light converging element array is provided. The photodiode array substrate includes a plurality of light sensing units arranged in an array and a circuit region. The circuit region is disposed on the periphery of the light sensing units. Each of the light sensing units includes a plurality of adjacent photodiodes arranged in an array. The distance increasing layer is disposed on the photodiode array substrate. The light converging element array is disposed on the distance increasing layer, and includes a plurality of light converging units arranged in an array. Reflected light from an outside is converged by the light converging elements on the light sensing units, respectively.

Light sensing module

A pseudo-piezoelectric d33 device includes a nano-gap, and a pair of integral and substantially parallel electrodes having a first sensing electrode and a second sensing electrode. The first sensing electrode and the second sensing electrode constitute a receiver. The nano-gap is disposed between the first sensing electrode and the second sensing electrode. An initial height of the nano-gap is smaller than or equal to 100 nanometers. The nano-gap is formed after a thermal reaction between a semiconductor material and a metal material to form a semiconductor-metal compound. The first sensing electrode of the receiver includes the semiconductor-metal compound to provide an integral capacitive sensing electrode to sense a capacitance change with the second sensing electrode and generate a sensing signal.

Pseudo-piezoelectric D33 device and electronic device using the same

An integrated spectrum sensing device for real-finger judgement includes a fingerprint sensing array, an optical unit and a signal processing unit. The fingerprint sensing array optically coupled to the optical unit includes multiple spectrum detecting units receiving light from a finger through the optical unit to detect spectrum distributions or variations outputted from the finger to obtain multiple sets of heterogeneous spectrum data. The signal processing unit electrically coupled to the spectrum detecting units performs measurement domain analysis according to the sets of heterogeneous spectrum data to judge whether the finger is real. A sensing method is also disclosed.

Integrated spectrum sensing device for real-finger judgement and sensing method

A touch display device with a fingerprint anti-spoofing function and an associated fingerprint anti-spoofing method are provided, where the touch display device may include a touch display panel and a processing circuit. The touch display panel may include a plurality of display units and one or more codebooks, where each of the display units includes a sensor unit, and the one or more codebooks may make the sensor units receive sensing information of an object which is put on the touch display panel. In addition, the processing circuit may obtain the sensing information from the sensor units, and determine whether the object is a real finger based on the sensing information and reference information.

Touch display device with fingerprint anti-spoofing function and associated fingerprint anti-spoofing method

A pseudo-piezoelectric d33 vibration device includes transistors and receivers electrically connected to the transistors. Each transistor controls a corresponding one of the receivers to receive a second vibration wave, generated after an object reflects a first vibration wave, and to generate a sensing signal. Each receiver has a first electrode, a second electrode and a nano-gap, which is created between the first and second electrodes after a semiconductor-metal compound is formed. A display integrating the pseudo-piezoelectric d33 vibration device is also provided.

Pseudo-piezoelectric d33 vibration device and display integrating the same

Embodiments of the present disclosure include a semiconductor device and methods of forming a semiconductor device. An embodiment is a method of forming a semiconductor device, the method comprising forming a conductive pad in a first substrate, forming an interconnecting structure over the conductive pad and the first substrate, the interconnecting structure comprising a plurality of metal layers disposed in a plurality of dielectric layers, bonding a die to a first side of the interconnecting structure, and etching the first substrate from a second side of the interconnecting structure, the etching exposing a portion of the conductive pad.

3D packages and methods for forming the same

A system and method for blocking heat from reaching an image sensor in a three dimensional stack with a semiconductor device. In an embodiment a heat sink is formed in a back end of line process either on the semiconductor device or else on the image sensor itself when the image sensor is in a backside illuminated configuration. The heat sink may be a grid in either a single layer or in two layers, a zig-zag pattern, or in an interleaved fingers configuration.

Image sensor device and method

A semiconductor device includes a first die having a first active surface and a first backside surface opposite the first active surface, a second die having a second active surface and a second backside surface opposite the second active surface, and an interposer, the first active surface of the first die being electrically coupled to a first side of the interposer, the second active surface of the second die being electrically coupled to a second side of the interposer. The semiconductor device also includes a first connector over the interposer, a first encapsulating material surrounding the second die, the first encapsulating material having a first surface over the interposer, and a via electrically coupling the first connector and the interposer. A first end of the via is substantially coplanar with the first surface of the first encapsulating material.

Package structure and methods of forming same

The present disclosure relates to a method of forming a micro-electro mechanical system (MEMs) structure. In some embodiments, the method may be performed by providing a device substrate having a first MEMS device and a second MEMS device, and by providing a capping structure having a first cavity and a second cavity. The capping structure is bonded to the device substrate, such that the first cavity is arranged over the first MEMS device and the second cavity is arranged over the second MEMS device. A first pressure is established within the first cavity and the second cavity. A vent is selectively etched within the capping structure to change the first pressure within the second cavity to a second pressure, which is different from the first pressure.

Microelectromechanical systems (MEMS) devices at different pressures

An all-flat sensor includes a coupling substrate; a sensing chip, which is disposed on the coupling substrate, has first electrodes arranged in an array and a first dielectric layer covering over the first electrodes, and is electrically connected to the coupling substrate; and a second dielectric layer covering over the sensing chip and providing an outlook color. An electronic device using the all-flat sensor is also provided.

All-flat sensor with exposed colorful member and electronic device using such sensor

A microelectromechanical system (MEMS) device may include a MEMS structure above a first substrate. The MEMS structure comprising a central static element, a movable element, and an outer static element. A portion of bonding material between the central static element and the first substrate. A second substrate above the MEMS structure, with a portion of a dielectric layer between the central static element and the second substrate. A supporting post comprises the portion of bonding material, the central static element, and the portion of dielectric material.

MEMS device structure and methods of forming same

A package component includes a surface dielectric layer including a planar top surface, a metal pad in the surface dielectric layer and including a second planar top surface level with the planar top surface, and an air trench on a side of the metal pad. The sidewall of the metal pad is exposed to the air trench.

Air trench in packages incorporating hybrid bonding

A method includes placing a microelectromechanical system (MEMS) device over a carrier, wire bonding the MEMS device to a bond pad on the carrier with a bond wire, and spray coating a buffer layer over the MEMS device and enclosing the bond wire. A Young's modulus value of the buffer layer is less than a Young's modulus value of the MEMS device.

Method of protecting microelectro mechanical system device

Growing community of inventors

Hsinchu, Taiwan

Bruce C S Chou