International Business Machines Corporation

Bruce Balch

Nazmul Habib

John J Ellis-Monaghan

Kerry Bernstein

Igor Arsovski

Jeanne P Bickford

Daniel Lawrence Stasiak

Susan K Lichtensteiger

Richard Andre Wachnik

Phung T Nguyen

Umberto Garofano

A method of normalizing strain in semiconductor devices and normalized strain semiconductor devices. The method includes: forming first and second field effect transistors of an integrated circuit; forming a stress layer over the first and second field effect transistors, the stress layer inducing strain in channel regions of the first and second field effect transistors; and selectively thinning the stress layer over at least a portion of the second field effect transistor.

Methods for normalizing strain in semicondcutor devices and strain normalized semiconductor devices

A method and device for measuring integrated circuit power supply noise and calibration of power supply noise analysis models. The method includes collecting power supply noise monitor data from an integrated circuit having one or more power supply noise monitors connected between a power supply and respective scan cells of a scan chain and one or more functional circuits connected to the scan chain by scanning a power supply noise generation pattern into the scan chain and scanning a resultant pattern out of the scan chain; converting the resultant data into actual values of selected power supply parameters; generating simulated values of the selected power supply parameters using a power supply noise simulation model based on design data of the integrated chip; comparing the actual values of the selected power supply parameters to the simulated values of the selected power supply parameters; and modifying the power supply noise simulation model based on the comparing.

Method and device for measuring integrated circuit power supply noise and calibration of power supply noise analysis models

Methods for normalizing strain in semiconductor devices and strain normalized semiconductor devices

A method is provided for characterizing performance of a chip having at least one voltage island and at least one performance screen ring oscillator (PSRO). An on-chip performance monitor (OCPM) is incorporated on the voltage island. Performance measurements of the voltage island are generated with only the voltage island under power. Performance measurements of the performance screen ring oscillator (PSRO) are generated with only the voltage island under power. Performance measurements of the performance screen ring oscillator (PSRO) is compared to the performance measurements of the on-chip performance monitor (OCPM) to determine a systematic offset due to the voltage island. Performance models are adjusted using the systematic offset due to the voltage island.

Voltage island performance/leakage screen monitor for IP characterization

Methods of modeling across reticle variations and a related reticle are disclosed. One embodiment of the method includes defining a test for determination across a multiple chip wafer; identifying a measurement structure for performing the test; implementing the measurement structure on the multiple chip wafer using a reticle including the measurement structure between copies of the multiple chips on the reticle, wherein no one of the multiple chips covers an entirety of the reticle; performing the test on the multiple chip wafer using the measurement structure to acquire data across the reticle; using data from the performing to establish an across reticle variation model; and using the across reticle variation model to predict across chip variation for at least one of the multiple chips.

Across reticle variation modeling and related reticle

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Saranac, NY, United States of America

Bruce Balch