Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Panasonic Corporation

Osram Opto Semiconductor Gmbh

Oledworks Gmbh

Ams-osram International Gmbh

Britta Goeoetz

Norwin Von Malm

Karsten Diekmann

Guenter Schmid

Alexander F Pfeuffer

Karsten Heuser

Nina Riegel

Benjamin Krummacher

Andreas Rausch

Dominik Pentlehner

David Racz

Martin Mandl

Carola Diez

Georg Dirscherl

Vincent Johannes Jacobus Van Montfort

Christian Kristukat

Tom Munters

Dominik Schulten

Steven Rossbach

Martin Wittmann

Ulrich Spintge

Wolfgang Scherer

Rudolf Herrmann

Ernst-Wilhelm Scheidt

Frank Singer

Hubert Halbritter

Erwin Lang

Thomas Wehlus

Andreas Kanitz

Ion Stoll

David J O'Brien

Alexander Linkov

Martin Strassburg

Daniel Steffen Setz

Martin Brandl

Matthias Sperl

Arvid Hunze

Laura Kreiner

Darshan Kundaliya

Thomas Dobbertin

Désirée Queren

Thilo Reusch

Hailing Cui

Juergen Moosburger

Michael Schumann

Alexander Behres

Markus Burger

Robert Schulz

Christopher A Tarry

Wolfgang Moench

Marcus Boehm

Robert Tress

A method for producing an optoelectronic semiconductor component and an optoelectronic component are disclosed. In an embodiment a method includes providing an optoelectronic semiconductor chip comprising at least one light-emitting layer and at least one cavity and introducing at least one precursor of a conversion element in the at least one cavity, wherein the at least one conversion element comprises a perovskite-based ABXor ABB'Xstructure.

μLED chip architecture based on nanostructured perovskite converter materials

A radiation-emitting device includes an optoelectronic component for emitting first electromagnetic radiation. The radiation-emitting device also includes a conversion element having an entrance surface and an exit surface. The radiation-emitting device further includes a dielectric mirror on the exit surface. The radiation-emitting device is configured such that first radiation emitted by the component during operation enters the conversion element via the entrance surface. The conversion element is configured for converting the first radiation into second electromagnetic radiation, which subsequently exits the conversion element via the exit surface. The dielectric mirror is transmissive to second radiation that is incident at angles of incidence in a predefined first angle range, and is reflective for second radiation that is incident at angles of incidence in a predefined second angle range.

Radiation-emitting device, and projector equipped therewith

An optoelectronic semiconductor chip may include an active region configured to emit electromagnetic radiation during operation of said optoelectronic semiconductor chip. The optoelectronic semiconductor chip comprises conversion elements arranged to convert the wavelength of the electromagnetic radiation emitted by the active region during operation, and at least one barrier at least partially impermeable to the electromagnetic radiation emitted by the active region. The barrier is disposed in a lateral direction between the conversion elements, the lateral direction being parallel to the main extension plane of the semiconductor body, and the barrier extending transversely to the lateral direction. The active region has at least two emission regions which can be driven separately from each other, and each of the conversion elements is disposed in a radiation direction of the electromagnetic radiation emitted from one of the emission regions. A method for manufacturing an optoelectronic semiconductor chip is also disclosed.

Optoelectronic semiconductor chip and method of manufacturing an optoelectronic semiconductor chip

In at least one embodiment, the method is designed for producing a light-emitting diode display (). The method comprises the following steps: &#x2022;A) providing a growth substrate (); &#x2022;B) applying a buffer layer () directly or indirectly onto a substrate surface (); &#x2022;C) producing a plurality of separate growth points () on or at the buffer layer (); &#x2022;D) producing individual radiation-active islands (), originating from the growth points (), wherein the islands () each comprise an inorganic semiconductor layer sequence () with at least one active zone () and have a mean diameter, when viewed from above onto the substrate surface (), between 50 nm and 20 &#x3bc;m inclusive; and &#x2022;E) connecting the islands () to transistors () for electrically controlling the islands ().

Method for producing a light-emitting diode display and light-emitting diode display

A method for producing at least one optoelectronic semiconductor component and an optoelectronic semiconductor component are disclosed. In an embodiment, the method includes providing a semiconductor layer sequence comprising a first semiconductor material configured to emit a first radiation and applying a conversion element at least partially on the semiconductor layer sequence via a cold method, wherein the conversion element comprises a second semiconductor material, and wherein the second semiconductor material is configured to convert the first radiation into a second radiation.

Method for producing at least one optoelectronic semiconductor component and optoelectronic semiconductor component

An optoelectronic arrangement and a lighting device are disclosed. In an embodiment the arrangement includes a semiconductor chip for generating radiation and a radiation conversion element located downstream of the semiconductor chip with respect to a radiation direction, wherein the radiation conversion element includes a plurality of conversion bodies each with a longitudinal extension axis, and wherein a spatial orientation of the longitudinal extension axes has a preferred direction.

Optoelectronic arrangement having a semiconductor chip and a conversion element

The invention relates to an illuminant () and a socket () for a lamp (). The features of the socket () can be implemented also independently of the features of the illuminant (). The illuminant () has a preferably planar illumination surface (). One or more semiconductor lighting elements are arranged within an illuminant housing (). The illuminant connection device () required for mechanical and electrical connection to the socket () is provided on the rear face () of the illuminant (), said rear face () lying opposite the illumination surface (). The dimensions of the illuminant are preferably greater than the dimensions of the socket () such that the illuminant () fully covers the socket when looking onto the illumination surface (), resulting in a particularly appealing look. Said socket and illuminant () modularly achieve large total illumination surfaces in a lamp () and an appealing overall appearance in a very simple manner.

OLED illuminant for a lamp

A method for producing a plurality of conversion elements () is specified, comprising providing a carrier substrate (), introducing a converter material () into a matrix material (), applying the matrix material () with the converter material () to individual regions () of the carrier substrate () in a non-continuous pattern, applying a barrier substrate () to the matrix material () and to the carrier substrate (), and singulating the carrier substrate () with the matrix material () and the barrier substrate () into a plurality of conversion elements () along singulation lines (V), wherein the conversion elements () in each case comprise at least one of the regions () of the matrix material ().

Methods for producing a plurality of conversion elements, conversion element and optoelectronic component

An optoelectronic component includes an optoelectronic semiconductor chip configured to emit electromagnetic radiation including a wavelength from a first spectral range, a wavelength-converting element configured to convert electromagnetic radiation including a wavelength from the first spectral range into electromagnetic radiation including a wavelength from a second spectral range, and a reflective element including a first reflectivity in the first spectral range and a second reflectivity in the second spectral range, wherein the first spectral range is below 1100 nm, and the second spectral range is above 1200 nm.

Optoelectronic component

According to the present disclosure, an organic light-emitting diode device is disclosed with an organic light-emitting diode having a first main surface and a second main surface lying opposite the first main surface, an optically functional device having a first hollow space and a second hollow space, and a control element. The first hollow space is arranged on or over the first main surface, and the second hollow space is arranged below the second main surface. The first hollow space and the second hollow space are connected to one another by means of a fluid connection. An optically functional fluid is arranged in the optically functional device. The control element is configured to move the optically functional fluid to and fro between the first hollow space and the second hollow space.

Organic light-emitting diode device

A method for producing optoelectronic semiconductor devices and an optoelectronic semiconductor device are disclosed. In an embodiment, the method includes providing a plurality of semiconductor chips for producing electromagnetic radiation, arranging the plurality of semiconductor chips in a plane, forming a housing body composite, at least some regions of which are arranged between the semiconductor chips, forming a plurality of conversion elements, wherein each conversion element comprises a wavelength-converting conversion material and is arranged on one of the semiconductor chips, encapsulating the plurality of conversion elements at least on their lateral edges by an encapsulation material, and separating the housing body composite into a plurality of optoelectronic semiconductor components.

Method for producing optoelectronic semiconductor devices and an optoelectronic semiconductor device

The invention relates to an organic light-emitting diode () with an organic layer sequence (). The organic layer sequence () comprises a first organic emitter layer () for generating electromagnetic radiation of a first wavelength range () and a second organic emitter layer () for generating electromagnetic radiation of a second wavelength range (). A charge carrier generation layer sequence (), CGL for short, is arranged between the first () and the second () emitter layer, and the first emitter layer () and the second emitter layer () are electrically connected in series via said CGL. The CGL () additionally has a converter material which converts the radiation of the first () and/or the second () wavelength range at least partially into radiation of a third wavelength range (). In this manner, the organic light-emitting diode () can emit mixed light with components of the first (), second (), and third () wavelength range.

Organic light-emitting diode

A method for producing an optoelectronic semiconductor chip is disclosed. In an embodiment, the method includes providing a semiconductor body with a pixel region including different subpixel regions, each subpixel region having a radiation exit face, applying an electrically conductive layer onto the radiation exit face of a subpixel region, wherein the electrically conductive layer is suitable at least in part for forming a salt with a protic reactant, and depositing a conversion layer on the electrically conductive layer using an electrophoresis process, wherein the deposited conversion layer comprises pores.

Method for producing an optoelectronic semiconductor chip

Various embodiments may relate to a wavelength conversion element including at least one sintered wavelength converting material, wherein a grid is formed by channels within the sintered wavelength converting material, the channels are at least partially surrounded by the sintered wavelength converting material, the channels reach at least partially through the sintered wavelength converting material in a direction perpendicular or oblique to a main extension direction of the wavelength conversion element, and the channels contain a non-converting sintered separator material.

Wavelength conversion element, light-emitting semiconductor component including a wavelength conversion element, method for producing a wavelength conversion element and method for producing a light-emitting semiconductor component including a wavelength conversion element

Growing community of inventors

Wuppertal, Germany

Britta Goeoetz