Siemens Aktiengesellschaft

Brigitte Schneider-Gmelch

Peter Tischer

Ludwig Treitinger

Joseph Mathuni

A method for manufacturing structures having dimensions in a range of 1 .mu.m and below in a layer of material by applying an auxiliary layer consisting of metal or metal oxide on the layer to be structured and utilizing a lacquer mask to structure the auxiliary layer to form a mass therein for the etching of the layer to be structured, characterized by passivating the auxiliary layer by applying a protective layer to prevent oxidizing of the auxiliary layer until a desired time. The protective layer can be gold or platinum and the auxiliary layer can be selected from a group consisting of titanium, hafnium, zirconium, vanadium, chromium, manganese, aluminum, niobium and tantalum. The method is particularly useful to manufacuture absorber structures of X-ray masks that are used in microelectronics.

Method for manufacturing accurate structures with a high aspect ratio

A thin film semiconductor gas sensor including a metal oxide semiconductor sensor layer whose electrical resistance changes in dependence upon the nature and concentration of a gas being detected and having a heating element integrated therewith is improved by forming the sensor from a semiconductor body having a shell zone located relatively close to an outer surface of such body and being doped to the point of degeneration, with two spaced apart metal contact strips being positioned on such doped shell zone for connection with a current source to heat the sensor.

Growing community of inventors

Munich, Germany

Brigitte Schneider-Gmelch