Wolfspeed, Inc.

Cree Fayetteville, Inc.

Siemens Energy, Inc.

Arkansas Power Electronics International, Inc.

Cree Gmbh

Brice McPherson

Alexander B Lostetter

Daniel John Martin

Brandon Passmore

Jennifer Stabach

Ramesh Subramanian

Anand A Kulkarni

David J Mitchell

John Fraley

Bryon Western

Roberto Marcelo Schupbach

Edward R Roesch

Rod Waits

Matthew Feurtado

Roberto M Schupbach

Ty McNutt

Alex Lostetter

Robert Shaw

Zachary Cole

Jared Hornberger

Jennifer Stabach-Smith

Shashwat Singh

Daniel Jenner Lichtenwalner

Edward Robert Van Brunt

Thomas E Harrington, Iii

Joe W McPherson

Brett Hull

Devarajan Balaraman

Geza Dezsi

Shadi Sabri

Sayan Seal

Chad B O'Neal

Peter Killeen

Tony M Berry

Marcelo Schupbach

Adam Barkley

Brad Reese

Leonard Schaper

Benjamin A Samples

Jack Bourne

Eric Cole

Tony Berry

Roberto Schupbach

John R Fraley

The disclosure is directed to a power module that includes at least one power substrate, a housing arranged on the at least one power substrate, and a first terminal electrically connected to the at least one power substrate. The first terminal includes a contact surface located above the housing at a first elevation. The power module includes a second terminal including a contact surface located above the housing at a second elevation different from the first elevation, a third terminal electrically connected to the at least one power substrate, and a plurality of power devices electrically connected to the at least one power substrate.

High power multilayer module having low inductance and fast switching for paralleling power devices

A package for power electronics includes a power substrate, a number of power semiconductor die, and a Kelvin connection contact. Each one of the power semiconductor die are on the power substrate and include a first power switching pad, a second power switching pad, a control pad, a semiconductor structure, and a Kelvin connection pad. The semiconductor structure is between the first power switching pad, the second power switching pad, and the control pad, and is configured such that a resistance of a power switching path between the first power switching pad and the second power switching pad is based on a control signal provided at the control pad. The Kelvin connection pad is coupled to the power switching path. The Kelvin connection contact is coupled to the Kelvin connection pad of each one of the power semiconductor die via a Kelvin conductive trace on the power substrate.

Package for power electronics

A power module has a substrate having a top side with a first device pad and a second device pad. A first plurality of vertical power devices is coupled to the first device pad via first drain contacts, and a second plurality of vertical power devices is coupled to the second device pad via second drain contacts to form part of a power circuit. A housing encompasses portions of the substrate, the first plurality of vertical power devices, and the second plurality of vertical power devices. A first power terminal extends through a top surface of the housing to the first device pad. A second power terminal extends through the top surface of the housing to the source contacts on a top side of the second plurality of vertical power devices. A third power terminal extends through a top surface of the housing to the second device pad.

Power module

Semiconductor packages and, more particularly, semiconductor packages with increased power handling capabilities are disclosed. Semiconductor packages may include lead frame structures and corresponding housings that incorporate semiconductor die. To promote increased current and voltage capabilities, exemplary semiconductor packages include one or more arrangements of creepage extension structures, lead frame structures that may include integral thermal pads, additional thermal elements, and combinations thereof. Creepage extension structures may be arranged as part of top sides of semiconductor packages along with thermal pads of lead frame structures and additional thermal elements. Creepage extension structures may also be arranged as part of top sides and along on one or more peripheral edges of semiconductor packages to promote further increases in power handling.

Semiconductor packages with increased power handling

A power module is provided with a substrate, power devices, and a housing. The power devices are mounted on device pads of the substrate and arranged to provide a power circuit having a first input, a second input, and at least one output. First and second power terminals provide first and second inputs for the power circuit. At least one output power terminal provides at least one output. The housing encompasses the substrate, the power devices, and portions of the first and second input power terminals as well as the at least one output power terminal. The first and second input power terminals extend out of a first side of the housing, and the at least one output power terminal extends out of a second side of the housing, the first side being opposite the second side.

Compact power module

Semiconductor package

Strategic placement and patterning of electrodes, vias, and metal runners can significantly reduce strain in a power semiconductor die. By modifying the path defining electrodes, vias, and metal runners, as well as patterning the material layers thereof, strain can be better managed to increase reliability of a power semiconductor die.

Power semiconductor device with reduced strain

A power module is provided with a substrate, power devices, and a housing. The power devices are mounted on device pads of the substrate and arranged to provide a power circuit having a first input, a second input, and at least one output. First and second power terminals provide first and second inputs for the power circuit. At least one output power terminal provides at least one output. The housing encompasses the substrate, the power devices, and portions of the first and second input power terminals as well as the at least one output power terminal.

Dual inline power module

Power module having pin fins

The present disclosure describes a power module having a substrate, first and second pluralities of vertical power devices, and first and second terminal assemblies. The substrate has a top surface with a first trace and a second trace. The first plurality of vertical power devices and the second plurality of vertical power devices are electrically coupled to form part of a power circuit. The first plurality of vertical power devices is electrically and mechanically directly coupled between the first trace and a bottom of a first elongated bar of the first terminal assembly. The second plurality of vertical power devices are electrically and mechanically directly coupled between the second trace and a bottom of a second elongated bar of the second terminal assembly.

Power semiconductor devices, and more particularly arrangements of power semiconductor devices for improved thermal performance in high power applications are disclosed. Arrangements for multiple power semiconductor devices within a package and/or module are provided that more efficiently utilize the active device area of each power semiconductor device for a given operational specification. Certain arrangements are provided that reduce the effects of thermal crowding in order to provide increased power capability or a similar power capability in a reduced device size. Improved thermal balancing may be provided by variable spacing and/or variable offset distances between next-adjacent power semiconductor devices. In this manner, active areas of power devices and/or modules may include an increased density of power semiconductor devices within a given area while also exhibiting improved thermal profiles during operation, thereby providing improved operating characteristics and/or increased operating lifetimes.

Arrangements of power semiconductor devices for improved thermal performance

Growing community of inventors

Fayetteville, AR, United States of America

Brice McPherson