International Business Machines Corporation

Brian Wayne Herbst

Wayne Martin Moreau

Robert Lavin Wood

Kevin Michael Welsh

Leo L Linehan

Gary T Spinillo

James Thomas Fahey

Timothy Joseph Dalton

Kevin Shawn Petrarca

Richard Paul Volant

Sampath Purushothaman

Christopher Vincent Jahnes

Stephen McConnell Gates

John Anthony Fitzsimmons

Vincent James McGahay

Chandrasekhar Narayan

Robert Allen Groves

Ian D Melville

Kelly Malone

Stanley Joseph Whitehair

Habib Hichri

Brett H Engel

Jeffrey R Marino

Stephen Alan Cohen

Bernd E Kastenmeier

Arthur W Martin

Sanjit Kumar Das

An interconnect structure for a semiconductor device includes an organic, low dielectric constant (low-k) dielectric layer formed over a lower metallization level. A via formed is within the low-k dielectric layer, the via connecting a lower metallization line formed in the lower metallization level with an upper metallization line formed in an upper metallization level. The via is surrounded by a structural collar selected from a material having a coefficient of thermal expansion (CTE) so as to protect the via from shearing forces following a thermal expansion of the low-k dielectric layer.

Structure and method for reducing thermo-mechanical stress in stacked vias

A metal plus low dielectric constant (low-k) interconnect structure is provided for a semiconductor device wherein adjacent regions in a surface separated by a dielectric have dimensions in width and spacing in the sub 250 nanometer range, and in which reduced lateral leakage current between adjacent metal lines, and a lower effective dielectric constant than a conventional structure, is achieved by the positioning of a differentiating or mask member that is applied for the protection of the dielectric in subsequent processing operations, at a position about 2-5 nanometers below a, to be planarized, surface where there will be a lower electric field. The invention is particularly useful in the damascene type device structure in the art wherein adjacent conductors extend from a substrate through an interlevel dielectric material, connections are made in a trench, a diffusion barrier liner is provided in the interlevel dielectric material and masking is employed to protect the dielectric material between conductors during processing operations.

Semiconductor recessed mask interconnect technology

A micro electromechanical switch has a guidepost formed upon a substrate. A signal transmission line is formed on the substrate, with the signal transmission line having a gap and forming an open circuit. The switch further includes a switch body having a via opening formed therein, with the switch body being movably disposed along an length defined by the guide post. The guidepost is partially surrounded by the via opening.

Multiposition micro electromechanical switch

A co-polymer of benzophenone and bisphenol A has been shown to have DUV absorption properties. Therefore, the co-polymer has particular utility as an antireflective coating in microlithography applications. Incorporating anthracene into the co-polymer backbone enhances absorption at 248 nm. The endcapper used for the co-polymer can vary widely depending on the needs of the user and can be selected to promote adhesion, stability, and absorption of different wavelengths.

Antireflective coating for microlithography

Method for patterning a photoresist material wherein an anti-reflective

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Poughquag, NY, United States of America

Brian Wayne Herbst