Micron Technology Incorporated

Texas Instruments Corporation

Other

Brian W Huber

Craig Thomas Salling

Gary L Howe

David R Brown

Miles S Wiscombe

David Lisenbe

Tony M Brewer

Scott Eugene Smith

Frank F Ross

Jason M Brown

Timothy Mowry Hollis

John Frederic Schreck

James S Rehmeyer

Roy Edgar Greeff

David J McElroy

Venkatraghavan Bringivijayaraghavan

Eric J Stave

Roger D Norwood

Baekkyu Choi

Parthasarathy Gajapathy

Yogesh Sharma

Todd A Dauenbaugh

Mansour Fardad

Vijay Vankayala

Brian Gross

Theodore T Pekny

Scott E Smith

Memory devices, systems including memory devices, and methods of operating memory devices are described, in which memory devices are configured to provide row clear features. In some embodiments, the memory device may receive a command from a host device directed to a row of a memory array included in the memory device. The memory device may determine that the command is directed to two or more columns associated with the row, where each column is coupled with a group of memory cells. The memory device may activate the row to write the two or more columns using a set of predetermined data stored in a register of the memory device. Subsequently, the memory device may deactivate the word line based on writing the set of predetermined data to the two or more columns.

Row clear features for memory devices and associated methods and systems

A memory device includes a command interface configured to receive write commands from a host device. Additionally, the memory device includes an input buffer configured to buffer a strobe signal from the host device. Furthermore, the memory device includes a first ripple counter and a second ripple counter. The memory device includes command handling circuitry configured to alternatingly start the first ripple counter and the second ripple counter in response to consecutive write commands. The command handling circuitry and/or the first and second ripple counters are configured to suppress a reset of the input buffer if either the first ripple counter or the second ripple counter has not reached a threshold and is still counting.

Synchronous input buffer control using a ripple counter

Methods, systems, and devices for voltage adjustment based on, for example, pending refresh operations are described. A memory device may periodically perform refresh operations to refresh volatile memory cells and may at times postpone performing one or more refresh operations. A memory device may determine a quantity of pending (e.g., postponed) refresh operations, such as by determining a quantity of refresh intervals that have elapsed without receiving or executing a refresh command, among other methods. A memory device may pre-emptively adjust (or cause to be adjusted) a supply voltage associated with the memory device or memory device component based on the quantity of pending refresh operations to prepare for the current demand associated with the performing the one or more pending refresh operations. For example, the memory device may increase a supply voltage associated with one or more components to prepare for performing multiple pending refresh operations.

Voltage adjustment based on pending refresh operations

Techniques described herein are related to spread amplifier having a differential amplifier spread (DAS) configured to receive a pair of input signals and to provide a plurality of graded outputs each having different output levels. The spread amplifier further includes a final driver stage having a plurality of final drivers, wherein each of the final drivers is configured to receive a respective one of the plurality of graded outputs. The spread amplifier may be used for the regulation of various voltages such as VDQS and VARY.

Power amplifier having a spread of graded outputs

Apparatuses and methods for a timing domain transfer circuit are disclosed. Disclosed embodiments may be configured to receive an event from one timing domain, output the event to another timing domain, and further configured to mark the event as transferred. An example method includes receiving an Event In based in a first timing domain at a first latch and receiving an intermediate event from the first latch by a second latch. The event is transferred to a second timing domain by the second latch and the first latch is reset based on feedback.

Apparatuses and methods for timing domain crossing

Apparatuses and methods for a timing domain transfer circuit are disclosed. Disclosed embodiments may be configured to receive an event from one timing domain, output the event to another timing domain, and further configured to mark the event as transferred. An example method includes receiving an Event in based in a first timing domain at a first latch and receiving an intermediate event from the first latch by a second latch. The event is transferred to a second timing domain by the second latch and the first latch is reset based on feedback.

Apparatuses and methods are disclosed herein, including those, performed by a memory die, that operate to detect that a command on a bus connected to the memory die is addressed to another memory die responsive to a chip select signal, and to change the impedance of an on-die termination circuit of the memory die responsive to the detecting.

On-die termination apparatuses and methods

Methods and apparatuses for shifting data signals are disclosed herein. An apparatus may comprise a clock generation circuit, a delay path, and a driver. The clock generation circuit may be configured to receive an input clock signal and generate a plurality of clock signals based, at least in part, on the clock signal. A delay path may be coupled to the clock generation circuit and configured to receive the input clock signal and the plurality of clock signals. The delay path may be further configured to receive a data signal and delay the data signal based, at least in part, on the input clock signal and each of the plurality of clock signals. A driver may be coupled to the delay path and configured to receive the delayed data signal, and may further be configured to provide the delayed data signal to a bus.

Methods and apparatuses for shifting data signals to match command signal delay

Memories and methods for providing and receiving non-data signals at a signal node are disclosed. One such memory includes first and second signal nodes, and first and second signal buffer. The first signal buffer is configured to be operative responsive to a first data strobe signal and further configured to be operative responsive to a non-data signal. The second signal buffer is configured to be operative responsive to a second data strobe signal. An example first data strobe signal is a read data strobe signal provided by the memory. In another example, the first data strobe signal is a write data strobe signal received by the memory. Examples of non-data signals include a data mask signal, data valid signal, error correction signal, as well as other signals.

Memories and methods for sharing a signal node for the receipt and provision of non-data signals

Methods and devices are disclosed, such as those involving a solid state memory device that includes a status register configured to be read with a combined parallel and serial read scheme. One such solid state memory includes a status register configured to store a plurality of bits indicative of status information of the memory. One such method of providing status information in the memory device includes providing the status information of a memory device in a parallel form. The method also includes providing the status information in a serial form after providing the status information in a parallel form in response to receiving at least one read command.

Combined parallel/serial status register read

Some embodiments include apparatus and methods having a memory cell included in a device, a control line configured to receive a control signal to access the memory cell, and a first line configured to transfer information to and from the memory cell. The control signal has a first level during a first time interval and a second level during a second time interval of a memory operation. The apparatus and methods also include a module configured to reduce difference between a value of a voltage on the second line and a value of a voltage on a node of the device during a first time portion of the second time interval. Additional apparatus and methods are disclosed.

Growing community of inventors

Allen, TX, United States of America

Brian W Huber