Hemlock Semiconductor Operations LLC

Brian S Cichowski

James C Mundell

James J Mueller

Christopher S Robinson

Vasgen A Shamamian

A method of removing surface carbon contamination from polycrystalline silicon comprises providing a polycrystalline silicon feed stream having surface carbon contamination, subjecting the polycrystalline silicon to a high velocity fluid selected from gas, gas/liquid mixtures, gas/solid mixtures and gas/solid/liquid mixtures to form a product stream comprising polycrystalline silicon having surface carbon in an amount of less than 200 parts per billion by weight based on weight of the polycrystalline silicon product and/or a reduction in surface carbon contamination of at least 20%. A system for conducting the method comprises an enclosure, a conveyer for moving a polycrystalline silicon feed stream through the enclosure, at least one stream of a high velocity fluid passing through outlets in the enclosure and directed at the feed stream, an ionizing source in the enclosure or integrated with the at least one stream of high velocity fluid, and an exhaust system for the enclosure.

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SAGINAW, MI, United States of America

Brian S Cichowski