Western Digital Technologies, Inc.

Hitachi Global Storage Technologies Netherlands B.v.

International Business Machines Corporation

Hgst Netherlands, B.v.

Tokyo Institute of Technology

Other

Sandisk Technologies Inc.

X-ray Optical Systems Incorporated

Hitachi Global Storage Technologies

Brian Rodrick York

Quang Le

Cherngye Hwang

Xiaoyong Liu

Kuok San Ho

Hisashi Takano

Ernesto Esteban Marinero

Susumu Okamura

Son T Le

Michael Gribelyuk

Wen-yaung Lee

Nam Hai Pham

James Mac Freitag

Ning Shi

Randy G Simmons

Zheng Gao

Jinshan Li

Timothy Martin Reith

Dulip Ajantha Welipitiya

Xiaoyu Xu

Fan Tuo

Thomas E Shatz

Yuankai Zheng

Matthew Joseph Carey

Suping Song

Alexander Michael Zeltser

Hassan Osman

Rohan Babu Nagabhirava

Elizabeth Ann Brinkman

Richard Hsiao

Zhanjie Li

Dieter Klaus Weller

Kurt A Rubin

Hal Jervis Rosen

Thao Anh Nguyen

David Thomas Margulies

Young-Suk Choi

James Devereaux Jarratt

Yongjian Sun

Andrew Chen

Huy H Ho

Hal Jerves Rosen

Alan Spool

Brian E Brusca

Joel S Forrest

Daniele Mauri

Jeffrey Childress

Bruce Alvin Gurney

Neil Smith

Christian Kaiser

Eric Edward Fullerton

Sue Siyang Zhang

Zhitao Diao

Meng Ding

Mary Frances Doerner

Hongquan Jiang

Marie-Claire Cyrille

Prakash Kasiraj

Yongchul Ahn

James Lamar Nix

Natacha Frederique Supper

Jila Tabib

Kyusik Shin

Eric Wayne Flint

Daryl J Pocker

Maki Maeda

Peter Dang

Chang Man Park

Ning Gao

Oi-fan Xiao

Pham Nam Hai

Khang H D Nguyen

April D Hixson-Goldsmith

Julian Sasaki

Ernest E Marinero

Kuok-San Ho

Thomas Block

Sharon Swee Ling Banh

Jinming Liu

Yu Tao

Xing-Cai Guo

The present disclosure generally relates to temperature detection devices including a ferromagnetic (FM) material disposed at a media facing surface (MFS). The FM material is configured to produce a first electric voltage signal in response to a temperature gradient due to an anomalous Nernst effect. The temperature detection device may also include a spin-orbit torque (SOT) material abutting the FM material. The SOT material includes at least one of BiSb, a topological insulator, a topological half-Heusler alloy, or a weakly oxidized heavy metal. The SOT material is recessed from the MFS, wherein the SOT material is configured to receive a spin current parallel to the temperature gradient generated by a spin Seebeck effect in the FM material. The spin current is detectable as a second electric voltage signal via an inverse spin Hall effect. The first electric voltage signal is added to the second electric voltage signal.

Spin orbit torque based thermal sensor for insitu monitoring of magnetic recording head

Nitrogen doping an insulating layer can lower the bandgap of a magnetic storage device. It is challenging to nitrogen dope magnesium oxide (MgO). A cation can be added to allow the magnesium to hold onto the nitrogen dopant without highly oxidizing or nitriding the cation. The resulting nitrogen doped MgXO, where X is the cation, has a lower bandgap compared to a much similar barrier layer that has neither nitrogen nor a cation thus improving thermal and electrical reliabilities. The nitrogen doped MgXO is non-stoichiometric whereas comparably, an oxynitride is stoichiometric. Example cations that may be used include aluminum, titanium, vanadium, chromium, and scandium.

Nitrogen doped oxides for lower bandgap

Aspects of the present disclosure generally relate to magnetic recording heads (such as write heads of data storage devices) that include multilayer structures to facilitate targeted switching and relatively low coercivity. In one or more embodiments, a magnetic recording head includes an iron-cobalt (FeCo) layer having a crystalline structure that is a cubic lattice structure, a first crystalline layer formed of a first material, and a second crystalline layer between the first crystalline layer and the FeCo layer. The second crystalline layer is formed of a second material different from the first material, and the second crystalline layer interfaces both the FeCo layer and the first crystalline layer. The crystalline structure of the FeCo layer has a texture of <100>.

Multilayer structures for magnetic recording devices to facilitate targeted magnetic switching and low coercivity

The present disclosure generally relates to a magnetic recording head comprising a read head. The read head comprises a first sensor disposed at a media facing surface (MFS) comprising at least one free layer, a second sensor disposed at the MFS comprising at least one free layer, a first spin generator spaced from the first sensor and recessed from the MFS, and a second spin generator spaced from the second sensor and recessed from the MFS. The first and second spin generators each individually comprises at least one spin orbit torque (SOT) layer. The SOT layer may comprise BiSb. The first and second sensors are configured to detect a read signal using a first voltage lead and a second voltage lead. The first and second spin generators are configured to inject spin current through non-magnetic layers to the first and second sensors using a plurality of current leads.

Non-localized spin valve multi-free-layer reader hybridized with spin orbit torque layers

The present disclosure generally relate to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a buffer layer, a bismuth antimony (BiSb) layer having a (012) orientation disposed on the buffer layer, and an interlayer disposed on the BiSb layer. The buffer layer and the interlayer may each independently be a single layer of material or a multilayer of material. The buffer layer and the interlayer each comprise at least one of a covalently bonded amorphous material, a tetragonal (001) material, a tetragonal (110) material, a body-centered cubic (bcc) (100) material, a face-centered cubic (fcc) (100) material, a textured bcc (100) material, a textured fcc (100) material, a textured (100) material, or an amorphous metallic material. The buffer layer and the interlayer inhibit antimony (Sb) migration within the BiSb layer and enhance uniformity of the BiSb layer while further promoting the (012) orientation of the BiSb layer.

Buffer layers and interlayers that promote BiSbx (012) alloy orientation for sot and MRAM devices

The present disclosure generally relates to a magnetic sensor half bridge circuit. The half bridge circuit comprises a bias source connected to a first leg and a second leg. The first leg comprises one or more first spin-orbit torque (SOT) structures connected in series, each first SOT structure comprising a first ferromagnetic (FM) layer disposed on a first SOT layer. The first SOT layer has a first end connected to ground and a second end connected to a first voltage sensor. The second leg comprises one or more second SOT structures connected in series, each second SOT structure comprising a second FM layer disposed on a second SOT layer. The second SOT layer has a first end connected to a second voltage sensor and a second end connected to a ground. The first voltage sensor is disposed adjacent to the second voltage sensor.

Magnetic sensor half-bridge based on inverse spin hall effect with reduced thermal drift

The present disclosure generally relates to a magnetic recording head comprising a read head. The read head comprises a sensor disposed at a media facing surface (MFS) and a spin generator spaced from the sensor and recessed from the MFS. The sensor and spin generators are disposed on a non-magnetic layer. The sensor comprises a free layer and the spin generator comprises at least one spin orbit torque (SOT) layer. The SOT layer may comprise topological material such as BiSb. The sensor is configured to detect a read signal using a first voltage lead and a second voltage lead. The spin generator is configured to inject spin current through the non-magnetic layer to the sensor using a first current lead and a second current lead. The shape of the non-magnetic layer is a triangular or trapezoidal shape to further concentrate spin current.

Non-localized spin valve reader hybridized with spin orbit torque layer

The present disclosure generally relates to a magnetic media drive comprising a magnetic recording head. The magnetic recording head comprises a main pole disposed at a media facing surface (MFS), a shield disposed at the MFS, a spin blocking layer disposed between the shield and the main pole, at least one non-magnetic layer disposed between the main pole and the shield, the at least one non-magnetic layer being disposed at the MFS, and at least one spin orbit torque (SOT) layer disposed over the at least one non-magnetic layer, the SOT layer being recessed a distance of about 20 nm to about 100 nm from the MFS. A ratio of a length of the SOT layer to a thickness of the SOT layer is greater than 1. The at least one SOT layer comprises BiSb.

Higher areal density non-local spin orbit torque (SOT) writer with topological insulator materials

The present disclosure generally relates to spin-orbit torque (SOT) devices comprising a bismuth antimony (BiSb) layer. The SOT devices further comprises a first shield, a BiSb layer disposed over the first shield (S), a free layer (FL) disposed over the BiSb layer, and a second shield (S) disposed over the FL. The S, the FL, and the Sare disposed at a media facing surface (MFS). The BiSb layer is recessed from the MFS a first distance of about 5 nm to about 20 nm. The FL has a length greater than the first distance. A notch and/or an insulation layer is disposed adjacent to the BiSb layer at the MFS. Current may be configured to flow vertically through the Sto the FL, and horizontally from the FL to the BiSb layer. Current may be configured to flow vertically through the Sto the S

SOT reader with recessed SOT topological insulator material

The present disclosure generally relates to a magnetic recording head comprising one or more spin-orbit torque (SOT) devices, the SOT devices each comprising a bismuth antimony (BiSb) layer. The magnetic recording head comprises a SOT device comprising a first shield extending to a media facing surface (MFS), a seed layer disposed over the first shield, the seed layer being disposed at the MFS, a free layer disposed on the seed layer, the free layer being disposed at the MFS, a bismuth antimony (BiSb) layer disposed over the free layer, the BiSb layer being recessed from the MFS, a second shield disposed over the BiSb layer, the second shield extending to the MFS, and a shield notch coupled to the second shield, the shield notch being disposed between the first shield and the second shield. The magnetic recording head may be a two-dimensional magnetic recording head comprising two SOT devices.

Spin-orbit torque SOT reader with recessed spin hall effect layer

The present disclosure generally relates to magnetoresistive (MR) devices. The MR device comprises a synthetic antiferromagnetic (SAF) layer that increases exchange coupling field, and in turn, less magnetic noise of such devices. The MR device comprises a first ferromagnetic (FM1) layer and a second ferromagnetic (FM2) layer, in between which is an SAF spacer of RuAl alloy having a B2 crystalline structure which may grow epitaxial on BCC (110) or FCC (111) textures, meaning that the (110) or (111) plane is parallel to the surface of MR device substrate. Further, amorphous layers may be inserted into the device structure to reset the growth texture of the device to a (001), (110), or (111) texture in order to promote the growth of tunneling barrier layers or antiferromagnetic (AF) pinning layers.

Magnetoresistive devices comprising a synthetic antiferromagnetic coupling layer of RuAl having a (110) texture

The present disclosure generally relates to spin-orbit torque (SOT) device comprising a first bismuth antimony (BiSb) layer having a (001) orientation. The SOT device comprises a first BiSb layer having a (001) orientation and a second BiSb layer having a (012) orientation. The first BiSb layer having a (001) orientation is formed by depositing an amorphous material selected from the group consisting of: B, Al, Si, SiN, Mg, Ti, Sc, V, Cr, Mn, Y, Zr, Nb, AlN, C, Ge, and combinations thereof, on a substrate, exposing the amorphous material to form an amorphous oxide surface on the amorphous material, and depositing the first BiSb layer on the amorphous oxide surface. By utilizing a first BiSb layer having a (001) orientation and a second BiSb having a (012) orientation, the signal through the SOT device is balanced and optimized to match through both the first and second BiSb layers.

Highly textured 001 BiSb and materials for making same

The present disclosure generally relates to a magnetic recording head comprising a spintronic device for magnetic media, such as a magnetic media drive. The spintronic device includes at least one spin Hall layer as well as at least one buffer layer and at least one interlayer. The buffer layer is positioned proximate a main pole of a write head while the interlayer is positioned proximate a trailing shield of the write head. The spin Hall layer is positioned between the buffer layer and the interlayer. The spintronic element may be disposed at the media facing surface (MFS) or recessed from the MFS. The spintronic device is capable of injecting spin current to the main pole, the trailing shield, or both.

Spin-orbit torque (SOT) writer with topological insulator materials

The present disclosure generally relates to a two dimensional magnetic recording (TDMR) spin-orbit torque (SOT) read head comprising bismuth antimony (BiSb) layers. The read head comprises a lower reader comprising a first SOT stack and an upper reader comprising a second SOT stack. The first SOT stack and the second SOT stack each individually comprise a BiSb layer recessed from a media facing surface (MFS) and a free layer exposed at the MFS. The BiSb layers of each SOT stack are recessed from the MFS a distance of about 5 nm to about 20 nm, the distance being less than a length of the free layers. In one embodiment, the lower reader and the upper reader share a current path. In another embodiment, the lower reader and the upper reader have separate current paths.

TDMR SOT read heads having recessed topological insulator materials

The present disclosure generally relates to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a doped bismuth antimony (BiSbE) layer having a () orientation. The devices may include magnetic write heads, read heads, or MRAM devices. The dopant in the BiSbE layer enhances the () orientation. The BiSbE layer may be formed on a texturing layer to ensure the () orientation, and a migration barrier may be formed over the BiSbE layer to ensure the antimony does not migrate through the structure and contaminate other layers. A buffer layer and interlayer may also be present. The buffer layer and the interlayer may each independently be a single layer of material or a multilayer of material. The buffer layer and the interlayer inhibit antimony (Sb) migration within the doped BiSbE layer and enhance uniformity of the doped BiSbE layer while further promoting the () orientation of the doped BiSbE layer.

Doping process to refine grain size for smoother BiSb film surface

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San Jose, CA, United States of America

Brian Rodrick York