Lg Innotek Co., Ltd.

Argo Ai Gmbh

Argo Al, LLC

Brian Piccione

Mark Itzler

Xudong Jiang

Harold Y Hwang

Krystyna Slomkowski

John Hostetler

Matthew T O'grady

Frederick Seng

Kuen-Ting Shiu

Krys Slomkowski

John L Hostetler

A computer-based system may quantify, based on the plurality of instances of a feature indicated by image data, an attribute (e.g., a color, a shape, a material, a texture, etc.) of the plurality of instances of the feature. The system may also quantify an attribute of an instance of the feature of the plurality of instances of the feature. The system may modify the image data to indicate the instance of the feature if/when a value of the quantified attribute of the instance of the feature exceeds a value of the quantified attribute of the plurality of instances of the feature by a threshold. Functionality (e.g., defective, non-defective, potentially defective, etc.) of the unit may be classified based on the modified image data.

Optical inspection based on repetitive feature comparison

Systems and methods are described for optical processing. According to some aspects an optical processing apparatus may include a pixelated photodiode array (PDA), each pixel in the PDA includes a radiation detector. The apparatus also includes a read out integrated circuit (ROIC) that includes a logic circuit and a plurality of switch elements. The plurality of switch elements being switchable between an armed state for arming its corresponding radiation detector and transmitting a signal received from the corresponding detector to the ROIC, and a disarmed state for disarming its corresponding detector and blocking transmittal of the signal, wherein in the armed state, the PDA is configured to detect an incoming optical signal and in the disarmed state, the PDA is configured to disregard the incoming optical signal. Moreover, the logic circuit controls a switch state of a selectable switch element associated with a radiation detector.

Systems and methods for pixel on-off switching in focal plane arrays

A GmAPD FPA having increased tolerance optical overstress includes a limit resistor that is monolithically integrated into each pixel in the FPA, and which limits the magnitude of the current entering the read out integrated circuit.

Geiger-mode focal plane array having increased tolerance to optical overstress

Systems and methods are described for optical processing. According to some aspects an apparatus may include a pixelated photodiode array (PDA), wherein each pixel in the PDA includes a radiation detector. The optical processing apparatus may also include a memory that stores one or more characteristics for each pixel in the PDA, and a read out integrated circuit (ROIC) communicatively coupled to the FPA and the memory. In some aspects, the ROIC reads from the memory the one or more characteristics for each pixel in the PDA, and adjusts an arm/disarm bias voltage for each pixel in the PDA based on the one or more characteristics of each pixel.

Systems and methods for breakdown voltage correction in Geiger-mode avalanche photodiode (APD) focal plane arrays (FPA)

Devices, systems, and methods are provided for reducing electrical and optical crosstalk in photodiodes. A photodiode may include a first layer with passive material, the passive material having no electric field. The photodiode may include a second layer with an absorbing material, the second layer above the first layer. The photodiode may include a diffused region with a buried p-n junction. The photodiode may include an active region with the buried p-n junction and having an electric field greater than zero. The photodiode may include a plateau structure based on etching through the second layer to the first layer, the etching performed at a distance of fifteen microns or less from the buried p-n junction.

Systems, methods, and devices for reducing optical and electrical crosstalk in photodiodes

Geiger-mode focal plane array with monolithically integrated resistors

An avalanche photodiode (APD) array with reduced cross talk comprises, in the illustrative embodiment, a 2D array of Geiger-mode APDs, wherein a via is formed partially through the backside (substrate) of each APD in the array, wherein the via is offset from the active region of each said APD.

APD focal plane arrays with backside vias

An avalanche photodiode (APD) array with reduced cross talk comprises, in the illustrative embodiment, a 2D array of Geiger-mode APDs, wherein a via is formed through the backside (substrate) of each APD in the array.

A scalable fuse design for individual pixels of a focal plane array of photodiodes comprises a fuse disposed on the upper surface of each photodiode in the array, wherein the fuse is situated proximal to a side of each photodiode. The fuse of each photodiode is electrically coupled to the active region thereof via a first bus and is electrically coupled to an ROIC via a second bus.

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Yardley, PA, United States of America

Brian Piccione