Northrop Grumman Systems Corporation

Brian Paul Wagner

Narsingh Bahadur Singh

Andre E Berghmans

David A Kahler

David J Knuteson

Marc Eisenzweig Sherwin

Darren Thomson

Michael Edward Aumer

John V Veliadis

Bettina A Nechay

Sean R McLaughlin

Robert Miles Young

Michael Rennie

Christopher F Kirby

Thomas J Knight

James T Kelliher

Jerry W Hedrick

Robert Samuel Howell

Aaron A Pesetski

John D Adam

Matthew Russell King

Michael Manuel Fitelson

Kenneth J Petrosky

Ty Richard McNutt

Pavel Borodulin

Sandro J Di Giacomo

John J Talvacchio

Nabil Abdel-Meguid El-Hinnawy

Michael J Lee

George M Bates

Cory Edward Sherman

Vivien M Luu

Mike Aumer

John R Mason, Jr

Evan B Jones

Khyhouth Lim

Mark S Usefara

Travis Randall

Anthony A Margarella

A method is provided of forming a superconductor device interconnect structure. The method comprises forming a first dielectric layer overlying a substrate and forming a superconducting interconnect element in the first dielectric layer. The superconducting interconnect element includes a top surface aligned with a top surface of the first dielectric layer to form a first interconnect layer. The superconductor device interconnect structure is moved into a dielectric deposition chamber. The method further comprises performing a cleaning process on a top surface of the first interconnect layer in the dielectric deposition chamber to remove oxidization from a top surface of the first interconnect layer, and depositing a second dielectric layer over the first interconnect layer in the dielectric deposition chamber.

Preclean and dielectric deposition methodology for superconductor interconnect fabrication

An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.

Nano avalanche photodiode architecture for photon detection

A method is provided of forming a superconductor interconnect structure. The method comprises forming a dielectric layer overlying a substrate, forming an interconnect opening in the dielectric layer, and moving the substrate to a deposition chamber. The method further comprises performing a cleaning process on the top surface of the dielectric layer and in the interconnect opening while in the deposition chamber, and depositing a superconducting metal in the interconnect opening while in the deposition chamber to form a superconducting element in the superconductor interconnect structure.

Preclean and deposition methodology for superconductor interconnects

A method of forming a superconductor device is provided. The method includes depositing a non-oxide based dielectric layer over a substrate, depositing a photoresist material layer over the non-oxide based dielectric layer, irradiating and developing the photoresist material layer to form a via pattern in the photoresist material layer, and etching the non-oxide based dielectric layer to form openings in the non-oxide based dielectric layer based on the via pattern. The method further comprises stripping the photoresist material layer, and filling the openings in the non-oxide based dielectric with a superconducting material to form a set of superconducting contacts.

Non-oxide based dielectrics for superconductor devices

A phase change material (PCM) switch is disclosed that includes a resistive heater element, and a PCM element proximate the resistive heater element. A thermally conductive electrical insulating barrier layer positioned between the PCM heating element and the resistive heating element, and conductive lines extend from ends of the PCM element and control lines extend from ends of the resistive heater element.

Phase change material switch and method of making the same

The disclosure relates to a high purity 2H-SiC composition and methods for making same. The embodiments represented herein apply to both thin film and bulk growth of 2H-SiC. According to one embodiment, the disclosure relates to doping an underlying substrate or support layer with one or more surfactants to nucleate and grow high purity 2H-SiC. In another embodiment, the disclosure relates to a method for preparing 2H-SiC compositions by nucleating 2H-SiC on another SiC polytype using one or more surfactants. The surfactants can include AlN, Te, Sb and similar compositions. These nucleate SiC into disc form which changes to hexagonal 2H-SiC material.

Method and apparatus for growing high purity 2H-silicon carbide

A method for growing a SiC-containing film on a Si substrate is disclosed. The SiC-containing film can be formed on a Si substrate by, for example, plasma sputtering, chemical vapor deposition, or atomic layer deposition. The thus-grown SiC-containing film provides an alternative to expensive SiC wafers for growing semiconductor crystals.

Method of producing large area SiC substrates

A SiMC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC SiMC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).

Semiconductor heterojunction devices based on SiC

Methods of producing polycrystalline and single crystal dielectrics are disclosed, including dielectrics comprising CaCuTiOor LaGaSiO. Superior single crystals are manufactured with improved crystallinity by atomic lattice constant adjustments to the dielectric and to the substrate on which it is grown. Dielectric materials made according to the disclosed methods are useful for manufacture of energy storage devices, e.g. capacitors.

High dielectric capacitor materials and method of their production

A process is provided for fabricating a semiconductor device having a germanium nanofilm layer that is selectively deposited on a silicon substrate in discrete regions or patterns. A semiconductor device is also provided having a germanium film layer that is disposed in desired regions or having desired patterns that can be prepared in the absence of etching and patterning the germanium film layer. A process is also provided for preparing a semiconductor device having a silicon substrate having one conductivity type and a germanium nanofilm layer of a different conductivity type. Semiconductor devices are provided having selectively grown germanium nanofilm layer, such as diodes including light emitting diodes, photodetectors, and like. The method can also be used to make advanced semiconductor devices such as CMOS devices, MOSFET devices, and the like.

Semiconductor devices that include germanium nanofilm layer disposed within openings of silicon dioxide layer

A nuclear radiation detection system using narrowband UV crystal filters is disclosed. Since the photons produced during the decay of &#x3b2;- and &#x3b3;-radiation can be detected in the spectral range of about 200-350 nm (the ultraviolet range), UV filter based photo sensors are utilized for detection. The nuclear radiation detection system comprises an optical assembly capable of focusing on a source of radiation, a UV filter assembly having a narrowband UV crystal filter and positioned to receive light transmitted through the optical assembly, and a light detector positioned to receive light transmitted through the UV filter assembly. The narrowband UV crystal filter is fabricated from crystals selected from the group consisting of nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate. The nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate may be doped to achieve even narrower band filter. The radiation detection system can be used to monitor contamination in a nuclear plant or a nuclear waste dump site. It may also be used for surveillance of contamination in case of a nuclear accident.

Nuclear radiation detection system

A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)(SiC)without any buffer layer is disclosed. The (AIN)(SiC)alloy film can be formed on a SiC substrate by a vapor deposition process using AlN and SiC powder as starting materials. The (AIN)(SiC)alloy film provides a better lattice match for GaN or SiC epitaxial growth and reduces defects in epitaxially grown GaN with better lattice match and chemistry.

Solid solution wide bandgap semiconductor materials

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Baltimore, MD, United States of America

Brian Paul Wagner