Semiconductor Components Industries, LLC

Sensl Technologies Limited

Brian Patrick McGarvey

Stephen John Bellis

John Carlton Jackson

Dariusz Piotr Palubiak

Paul Malachy Daly

A semiconductor package may include a line array of single-photon avalanche diodes (SPADs). The line array of single-photon avalanche diodes may be split between multiple silicon dice. Each silicon die may be overlapped by at least one lens to focus light away from gaps between the dice and towards the single-photon avalanche diodes. There may be one single-photon avalanche diode for each silicon die or multiple single-photon avalanche diodes for each silicon die. When there are multiple single-photon avalanche diodes for each silicon die, lenses may be formed over only the edge single-photon avalanche diodes.

Semiconductor packages with an array of single-photon avalanche diodes split between multiple semiconductor dice

A segmented optoelectronic semiconductor package may help to alleviate stresses resulting from bending that can cause a mechanical defect (e.g., crack) in a detector circuit. The bending can result from thermal growth/shrinkage of parts used in the optical electronic package and may be more pronounced for high aspect ratio detector circuits. The segmentation of the disclosed semiconductor package can create seams that allow the parts to flex without breaking. As a result, the disclosed semiconductor package may facilitate high aspect ratio optical detection over a wide temperature range.

Optoelectronic device having a modular package

A semiconductor device may include a plurality of single-photon avalanche diodes. The single-photon avalanche diodes may be arranged in microcells. Each microcell may be a split microcell with first and second independent microcell segments. Each microcell segment in the split microcell may have a respective single-photon avalanche diode that is coupled to an output line. The single-photon avalanche diode of each microcell segment may also be coupled to a respective resistor that is used to quench avalanches in the single-photon avalanche diode. Splitting the microcell may reduce the recovery time of each microcell. The segments of the split microcell may be positioned close together, even if susceptible to optical crosstalk. Intra-microcell isolation structures may be formed between the microcell segments. Inter-microcell isolation structures may be formed around a perimeter of the split microcell. The intra-microcell and inter-microcell isolation structures may be different.

Silicon photomultipliers with split microcells

An imaging device may include single-photon avalanche diodes (SPADs). The single-photon avalanche diodes may be arranged in a one-dimensional or two-dimensional array in a SPAD-based semiconductor device. The SPAD-based semiconductor device may also include a transparent cover glass that is formed over the array of SPADs. Each line of SPADs within the SPAD-based semiconductor device may be covered by a respective light spreading lens. The light spreading lens may be formed as a groove in an upper surface of the transparent cover glass. The light spreading lens may have a uniform cross-section along its length. The light spreading lens may be formed as a convex lens on an upper or lower surface of the transparent cover glass.

Semiconductor devices with single-photon avalanche diodes and light spreading lenses

A semiconductor package may include a line array of single-photon avalanche diodes (SPADs). The line array of single-photon avalanche diodes may be split between multiple silicon dice. The silicon dice may have a staggered arrangement, with prisms on the package lid redirecting incident light to the silicon dice. The silicon dice may alternate between a first side of the package substrate and a second side of the package substrate. The prisms may alternate between a first structure that redirects incident light to the first side of the package substrate and a second structure that redirects incident light to the second side of the package substrate. The silicon dice may overlap to allow satisfactory alignment between the silicon dice and the prisms.

Semiconductor packages with single-photon avalanche diodes and prisms

An imaging device may include single-photon avalanche diodes (SPADs). The single-photon avalanche diodes may be arranged in an array of microcells (such as a silicon photomultiplier). Each microcell may have an aspect ratio that is greater than 1. Each microcell may be covered by a microlens that also has an aspect ratio that is greater than 1. The microlens may have curvature in a first direction (parallel to the width of the microcell/microlens) and less curvature in a second direction that is orthogonal to the first direction (parallel to the length of the microcell/microlens). Forming non-square, rectangular microcells and microlenses in this fashion may allow for larger microcells that still have satisfactory microlens performance.

Semiconductor devices with single-photon avalanche diodes and rectangular microlenses

An imaging device may include single-photon avalanche diodes (SPADs). Positioning SPADs close together in an imaging device (such as a silicon photomultiplier) may have benefits such as improved sensitivity. However, as the SPADs get closer together, the SPADS may become susceptible to crosstalk. Crosstalk is typically undesirable due to reduced dynamic range and reduced signal accuracy. To reduce crosstalk, a capacitor or other component may be coupled between adjacent SPADs. When an avalanche occurs on a given SPAD, the bias voltage may drop below the breakdown voltage. The capacitor may cause a corresponding voltage drop on a neighboring SPAD. The voltage drop on the neighboring SPAD reduces the over-bias of that SPAD, reducing the sensitivity of the SPAD and therefore mitigating the chance of crosstalk occurring.

Imaging devices with capacitively coupled single-photon avalanche diodes

The present disclosure relates to a semiconductor photomultiplier comprising a a substrate; an array of photosensitive elements formed on a first major surface of the substrate; a plurality of primary bus lines interconnecting the photosensitive elements; at least one segmented secondary bus line provided on a second major surface of the substrate which is operably coupled to one or more terminals; and multiple vertical interconnect access (via) extending through the substrate operably coupling the primary bus lines to the at least one segmented secondary bus line.

Semiconductor photomultiplier

An imaging device may include an active silicon photomultiplier and associated temperature and non-uniformity compensation circuitry configured to mitigate temperature and process variations on the device. The compensation circuitry may include a reference silicon photomultiplier, a constant current source that supplies a fixed current into the reference silicon photomultiplier, a voltage sensor for detecting a voltage output from the reference silicon photomultiplier, a data converter for converting the voltage output from the voltage sensor, and a voltage controller for generating an adjustable voltage for biasing the active silicon photomultiplier depending on the signal output from the data converter. The active silicon photomultiplier may include multiple illuminated microcells covered by microlenses, whereas the reference silicon photomultiplier may include multiple dark microcells distributed among the illuminated microcells to help account for non-uniformities in microcell performance across the imaging device.

Temperature and non-uniformity compensation circuitry for silicon photomultiplier

The present disclosure relates to a semiconductor photomultiplier comprising a substrate; an array of photosensitive cells formed on the substrate that are operably coupled between an anode and a cathode. A set of primary bus lines are provided each being associated with a corresponding set of photosensitive cells. A secondary bus line is coupled to the set of primary bus lines. An electrical conductor is provided having a plurality of connection sites coupled to respective connection locations on the secondary bus line for providing conduction paths which have lower impedance than the secondary bus line.

The present disclosure relates to a semiconductor photomultiplier which comprises one or more microcells on a substrate having at least one terminal. At least one ESD protection element is operably coupled to the at least one terminal.

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Templemartin, Ireland

Brian Patrick McGarvey