Siltronic Ag

Brian Murphy

Reinhold Wahlich

Andreas Huber

Dirk Dantz

Wilfried Von Ammon

Sarad Bahadur Thapa

Maik Haeberlen

Bernd Stritzker

Rüdiger Schmolke

James Moreland

Jörg Lindner

Diego Feijóo

Maik Häberlen

Joerg Lindner

Semiconductor layer structure and a method for producing a structure are provided, including a substrate made of semiconductor material, on which a layer made of a second semiconductor material is situated, furthermore a region () enriched with impurity atoms, which region is situated either in layer () or at a specific depth below the interface between layer () and substrate (), additionally a layer () within the region () enriched with impurity atoms, which layer comprises cavities produced by ion implantation, furthermore at least one epitaxial layer () applied to layer () and also a defect region () comprising dislocations and stacking faults within the layer () comprising cavities, the at least one epitaxial layer () being largely crack-free, and a residual strain of the at least one epitaxial layer () being less than or equal to 1 GPa.

Semiconductor layer structure comprising a cavity layer and method for fabricating the semiconductor layer structure

Semiconductor structures are produced by providing a 3C&#x2014;SiC semiconductor layer containing a monocrystalline 3C&#x2014;SiC layer by implantation of carbon in silicon on a first silicon substrate and applying an epitaxial layer of nitride compound semiconductor suitable for the generation of optoelectronic components onto the 3C&#x2014;SiC semiconductor layer structure, wherein the epitaxial layer of nitride semiconductor is transferred onto a second substrate by bonding the nitride layer onto the second substrate surface and mechanically or chemically removing silicon and layers containing SiC, the second substrate being a metal with a reflectivity &#x2267;80% or being substantially transparent.

Method for the production of a semiconductor structure

Silicon carbide substrate wafers are prepared by transferring a monocrystalline silicon layer from a donor wafer onto a handle wafer, the silicon layer being implanted with carbon and annealed to form a monocrystalline SiC layer prior to or after transfer of the silicon layer.

Multilayered semiconductor wafer and process for manufacturing the same

Semiconductor layer structure and method for fabricating a semiconductor layer structure

The invention relates to a process for manufacturing a multilayered semiconductor wafer comprising a handle wafer () and a layer () comprising silicon carbide bonded to the handle wafer (), the process comprising the steps of: a) providing a handle wafer (), b) providing a donor wafer () comprising a donor layer () and a remainder () of the donor wafer, the donor layer () comprising monocrystalline silicon, e) bonding the donor layer () of the donor wafer () to the handle wafer (), and f) removing the remainder () of the donor wafer in order to expose the donor layer () which remains bonded to the handle wafer (), the process being characterized by further steps of c) implanting carbon ions into the donor layer () in order to produce a layer () comprising implanted carbon, and d) heat-treating the donor layer () comprising the layer () comprising implanted carbon in order to form a silicon carbide donor layer () in at least part of the donor layer (). The invention also relates to a multilayered semiconductor wafer comprising a handle wafer () and a silicon carbide donor layer () which is bonded to the handle wafer (), wherein the silicon carbide donor layer () is free of twins and free of additional silicon carbide polytypes, as determined by X-ray diffraction.

A process for producing a semiconductor substrate comprising a carrier wafer and a layer of single-crystalline semiconductor material: a) producing a layer containing recesses at the surface of a donor wafer of single-crystalline semiconductor material, b) joining the surface of the donor wafer containing recesses to the carrier wafer, c) heat treating to close the recesses at the interface between the carrier wafer and the donor wafer to form a layer of cavities within the donor wafer, and d) splitting the donor wafer along the layer of cavities, resulting in a layer of semiconductor material on the carrier wafer. Semiconductor substrates prepared thusly may have a single-crystalline semiconductor layer having a thickness of 100 nm or less, a layer thickness uniformity of 5% or less, and an HF defect density of 0.02/cmor less.

Semiconductor substrate and process for producing it

Treatment of a semiconductor wafer employs:

Method and apparatus for the treatment of a semiconductor wafer

A process for producing a semiconductor substrate comprising a carrier wafer and a layer of single-crystalline semiconductor material:

SOI wafers are manufactured to have very thin device layers of high surface quality. The layer is &#x2266;20 nm in thickness, has an HF density of &#x2266;0.1/cm, and a surface roughness of 0.2 nm RMS.

Film or layer of semiconducting material, and process for producing the film or layer

A semiconductor substrate useful as a donor wafer is a single-crystal silicon wafer having a relaxed, single-crystal layer containing silicon and germanium on its surface, the germanium content at the surface of the layer being in the range from 10% by weight to 100% by weight, and a layer of periodically arranged cavities below the surface. The invention also relates to a process for producing this semiconductor substrate and to an sSOI wafer produced from this semiconductor substrate.

The invention relates to a film or a layer made of semi-conducting material with low defect density in the thin layer, and a SOI-disk with a thin silicon layer exhibiting low surface roughness, defect density and thickness variations. The invention also relates to a method for producing a film or a layer made of semi-conductive material. Said method comprises the following steps: a) producing structures from a semi-conductive material with periodically repeated recesses which have a given geometrical structure, b) thermally treating the surface structured material until a layer with periodically repeated hollow spaces is formed under a closed layer on the surface of the material, c) separating the closed layer on the surface along the layer of hollow spaces from the remainder of the semi-conductive material.

Growing community of inventors

Pfarrkirchen, Germany

Brian Murphy