Cabot Microelectronics Corporation

Cabot Corporation

Speedfam-ipec Corporation

Rohm and Haas Electronic Materials Cmp Holdings, Inc.

Other

Henkel Corporation

Novellus Systems Incorporated

Brian L Mueller

Christopher C Streinz

Steven Grumbine

Shumin Wang

Ismail Emesh

Saket Chadda

James A Dirksen

Nikolay N Korovin

David Schroeder

Mingming Fang

Gautam S Grover

Paul M Feeney

Jeffrey P Chamberlain

Gregory H Bogush

Jeffery P Chamberlain

Rodney C Kistler

Phillip W Carter

Vlasta Brusic Kaufman

Michael A Lucarelli

Charles Y Yu

Andrew Scott Lawing

Elizabeth J Siebert

Matthew Neville

J Scott Steckenrider

Sarah J Lane

Alicia Walters

Francesco M De Rege

Debra L Scherber

Alicia F Francis

Max H Walters

An electrochemical planarization apparatus for planarizing a metallized surface on a workpiece includes a polishing pad and a platen. The platen is formed of conductive material, is disposed proximate to the polishing pad and is configured to have a negative charge during at least a portion of a planarization process. At least one electrical conductor is positioned within the platen. The electrical conductor has a first end connected to a power source. A workpiece carrier is configured to carry a workpiece and press the workpiece against the polishing pad. The power source applies a positive charge to the workpiece via the electrical conductor so that an electric potential difference between the metallized surface of the workpiece and the platen is created to remove at least a portion of the metallized surface from the workpiece.

Method and apparatus for electrochemical planarization of a workpiece

A system, composition, and a method for planarizing or polishing a composite substrate are provided. The planarizing or polishing system comprises (i) a polishing composition comprising (a) about 0.5 wt. % or more of fluoride ions, (b) about 1 wt. % or more of an amine, (c) about 0.1 wt. % or more of a base, and (d) water, and (ii) an abrasive. The present invention also provides a method of planarizing or polishing a composite substrate comprising contacting the substrate with a system comprising (i) a polishing composition comprising (a) about 0.5 wt. % or more of fluoride ions, (b) about 1 wt. % or more of an amine, (c) about 0.1 wt. % or more of a base, and (d) water, and (ii) an abrasive.

System for the preferential removal of silicon oxide

The present invention provides a method of manufacturing a composition for polishing silica and silicon nitride on a semiconductor substrate. The method comprises ion-exchanging carboxylic acid polymer to reduce ammonia and combining by weight percent 0.01 to 5 of the ion-exchanged carboxylic acid polymer with 0.001 to 1 quaternary ammonium compound, 0.001 to 1 phthalic acid and salts thereof, 0.01 to 5 abrasive, and balance water.

Compositions for chemical mechanical polishing silica and silicon nitride having improved endpoint detection

The present invention provides a method for polishing silica and silicon nitride on a semiconductor wafer comprising the steps of planarizing the silica with a first aqueous composition comprising by weight percent 0.01 to 5 carboxylic acid polymer, 0.02 to 6 abrasive, 0.01 to 10 polyvinylpyrrolidone, 0 to 5 cationic compound, 0 to 1 phthalic acid and salts, 0 to 5 zwitterionic compound and balance water, wherein the polyvinylpyrrolidone has an average molecular weight between 100 grams/mole to 1,000,000 grams/mole. The method further provides detecting an endpoint to the planarization, and clearing the silica with a second aqueous composition comprising by weight percent 0.001 to 1 quaternary ammonium compound, 0.001 to 1 phthalic acid and salts thereof, 0.01 to 5 carboxylic acid polymer, 0.01 to 5 abrasive and balance water.

Multi-step methods for chemical mechanical polishing silicon dioxide and silicon nitride

A system, composition, and a method for planarizing or polishing a composite substrate are provided. The planarizing or polishing system comprises (i) a polishing composition comprising (a) about 0.5 wt. % or more of fluoride 5 ions, (b) about 1 wt. % or more of an amine, (c) about 0.1 wt. % or more of a base, and (d) water, and (ii) an abrasive. The present invention also provides a method of planarizing or polishing a composite substrate comprising contacting the substrate with a system comprising (i) a polishing composition comprising (a) about 0.5 wt. % or more of fluoride ions, (b) about 1 wt. % or more of an amine, (c) about 0.1 wt. % or more of a base, and (d) water, and (ii) an abrasive.

A chemical mechanical polishing composition comprising a soluble cerium compound at a pH above 3 and a method to selectively polish a silicon oxide overfill in preference to a silicon nitride film layer in a single step during the manufacture of integrated circuits and semiconductors.

Compositions for oxide CMP

A process for removing a metallized surface from a workpiece is provided. A kinetic removal mechanism for removal of the metallized surface is characterized by a formation step for formation of a removable surface film and an abrasive step for removal of the film. The process includes causing the workpiece to contact a polishing surface while effecting relative motion between the workpiece and the polishing surface. The process also includes causing a polishing solution having less than 1 wt % of a polishing abrasive to be distributed at a contact area between the workpiece and the polishing surface so that the abrasive step is a rate-determining step of the removal mechanism.

Apparatus and process for polishing a workpiece

The invention provides a polishing system that comprises a liquid carrier, an alkali metal ion, hydroxide ions, and a polishing pad and/or an abrasive. The abrasive can be dispersed in the liquid carrier of the polishing system or bound to the polishing pad. The alkali metal ion can be any univalent group I metal ion and is present in the polishing system at a concentration of about 0.05 M or more. Hydroxide ions are present in a sufficient amount to provide the system with a pH of about 9 or more. The liquid carrier of the polishing system can be any suitable polar solvent, such as water. The invention further provides a polishing method that involves polishing a portion of a substrate with the polishing system beginning about 6 hours or less after the polishing system is prepared.

Preequilibrium polishing method and system

A composition and a method for planarizing or polishing a surface with the composition are provided. The composition comprises a liquid carrier, a chemical accelerator, and solids comprising about 5-90 wt. % of fumed metal oxide, and about 10-95 wt. % of abrasive particles, wherein about 90% or more of the abrasive particles (by number) have a particle size no greater than 100 nm. The composition of the present invention is useful in planarizing or polishing a surface with high polishing efficiency, uniformity, and removal rate, with minimal defectivity, such as field loss of underlying structures and topography.

Composition and method for planarizing surfaces

Composition for oxide CMP

The invention provides a polishing system comprising (a) a liquid carrier, (b) an alkali metal ion, (c) a compound comprising an amine group and at least one polar moiety, wherein the polar moiety contains at least one oxygen atom, and (d) a polishing pad and/or an abrasive, wherein the total ion concentration of the system is above the critical coagulation concentration. The invention also provides a method of planarizing or polishing a composite substrate comprising contacting the substrate with a the aforementioned polishing system or a polishing system comprising (a) a liquid carrier, (b) an alkali metal ion, (c) a compound comprising an amine group and at least one polar moiety, wherein the polar moiety contains at least one oxygen atom, and (d) a polishing pad and/or an abrasive, and polishing at least a portion of the substrate therewith in about 6 hours or less after the polishing system is prepared.

Alkali metal-containing polishing system and method

An electrochemical deposition apparatus and method for depositing a material onto a surface of a workpiece and for polishing the material are disclosed. The apparatus includes a platen and a polishing surface, including a conductive material and conductors embedded therein, disposed proximate the platen. During material deposition, a bias is applied across the conductor and the platen to cause deposition of material onto the workpiece surface.

Method and apparatus for electrochemically depositing a material onto a workpiece surface

An aqueous chemical mechanical polishing slurry useful for polishing the polysilicon layer of a semiconductor wafer comprising an aqueous solution of at least one abrasive, and at least one alcoholamine. The slurry preferably has a pH of from about 9.0 to about 10.5 and it includes an optional buffering agent.

Chemical mechanical polishing slurry and method for using same

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Aurora, IL, United States of America

Brian L Mueller