Desktop Metal, Inc.

1366 Technologies Inc.

Varian Semiconductor Equipment Associates, Inc.

Brian Kernan

Nihan Tuncer

Alexander C Barbati

Animesh Bose

Michael Andrew Gibson

Mark Sowerbutts

Emanuel Michael Sachs

George Hudelson

Ralf Jonczyk

Nicholas Mykulowycz

Adam M Lorenz

Peter Lawrence Kellerman

Ricardo Fulop

Dawei Sun

Frederick M Carlson

David J Morrell

G D Stephen Hudelson

John Reidy

Karl-Heinz Schofalvi

Christopher Craven

Gd Stephen Hudelson

Techniques for debinding additively fabricated parts are described that do not require solvent debinding or catalytic debinding, and that may be performed using only thermal debinding in a furnace. As a result, in at least some cases debinding and sintering may take place sequentially within a single furnace. In some embodiments, the techniques may utilize particular materials as binders that allow for a thermal debinding process that does not negatively affect the parts.

Thermal debinding techniques for additive manufacturing and related systems and methods

Embodiments of the present disclosure are drawn to systems and methods for adjusting a three-dimensional (3D) model used in metal additive manufacturing to maintain dimensional accuracy and repeatability of a fabricated 3D part. These embodiments may be used to reduce or remove geometric distortions in the fabricated 3D part. One exemplary method may include: receiving, via one or more processors, a selection made by a user; receiving a 3D model of a desired part; retrieving at least one model constant based on the user's selection; receiving an input of at least one process variable setting from a set of process variable settings; generating transformation factors based on the at least one process variable parameter and the at least one model constant; transforming the 3D model of the desired part based on the transformation factors; and generating processing instructions for fabricating the transformed 3D model of the desired part.

Systems and methods for adjusting a three-dimensional (3D) model during additive manufacturing

A system for generating a user-adjustable furnace profile, comprises a user interface configured to receive one or more materials properties from a user, a processor, and a memory with computer code instructions stored thereon. The memory is operatively coupled to the processor such that, when executed by the processor, the computer code instructions cause the system to implement communicating with a furnace to ascertain one or more thermal processes associated with the furnace, identifying one or more object characteristics associated with an object to be processed by furnace, and determining a thermal processing parameter profile of at least one thermal processing parameter corresponding to each of the thermal processes, based on (i) the one or more part characteristics and (ii) the one or more materials properties, the thermal processing parameter profile characterizing a cycle of the one or more thermal processes.

Method and system for software defined metallurgy

Devices, systems, and methods are directed to binder jetting for forming three-dimensional parts having controlled, macroscopically inhomogeneous material composition. In general, a binder may be delivered to each layer of a plurality of layers of a powder of inorganic particles. An active component may be introduced, in a spatially controlled distribution, to at least one of the plurality of layers such that the binder, the powder of inorganic particles, and the active component, in combination, form an object. The object may be thermally processed into a three-dimensional part having a gradient of one or more physicochemical properties of a material at least partially formed from thermally processing the inorganic particles and the active component of the object.

Binder jetting in additive manufacturing of inhomogeneous three-dimensional parts

A semiconductor wafer forms on a mold containing a dopant. The dopant dopes a melt region adjacent the mold. There, dopant concentration is higher than in the melt bulk. A wafer starts solidifying. Dopant diffuses poorly in solid semiconductor. After a wafer starts solidifying, dopant can not enter the melt. Afterwards, the concentration of dopant in the melt adjacent the wafer surface is less than what was present where the wafer began to form. New wafer regions grow from a melt region whose dopant concentration lessens over time. This establishes a dopant gradient in the wafer, with higher concentration adjacent the mold. The gradient can be tailored. A gradient gives rise to a field that can function as a drift or back surface field. Solar collectors can have open grid conductors and better optical reflectors on the back surface, made possible by the intrinsic back surface field.

Methods for creating a semiconductor wafer having profiled doping and wafers and solar cell components having a profiled field, such as drift and back surface

A semiconductor wafer forms on a mold containing a dopant. The dopant dopes a melt region adjacent the mold. There, dopant concentration is higher than in the melt bulk. A wafer starts solidifying. Dopant diffuses poorly in solid semiconductor. After a wafer starts solidifying, dopant cannot enter the melt. Afterwards, the concentration of dopant in the melt adjacent the wafer surface is less than what was present where the wafer began to form. New wafer regions grow from a melt region whose dopant concentration lessens over time. This establishes a dopant gradient in the wafer, with higher concentration adjacent the mold. The gradient can be tailored. A gradient gives rise to a field that can function as a drift or back surface field. Solar collectors can have open grid conductors and better optical reflectors on the back surface, made possible by the intrinsic back surface field.

An apparatus for forming a crystalline sheet. The apparatus may include a crystallizer comprising a first gas channel and a second gas channel, wherein the first gas channel and second gas channel extend through the crystallizer to a lower surface of the crystallizer between an upstream edge and a downstream edge. The first gas channel may be disposed closer to the downstream edge than the second gas channel. A first gas source may be coupled to the first gas channel, where the first gas source comprises helium or hydrogen, and a second gas source may be coupled to the second gas channel, where the second gas source does not contain hydrogen or helium.

Apparatus and method for crystalline sheet growth

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Andover, MA, United States of America

Brian Kernan