Zetta Research and Development LLC - Aqt Series

Aqt Solar, Inc.

Brian Josef Bartholomeusz

Michael Bartholomeusz

Mariana Rodica Munteanu

Amith Kumar Murali

Vardaan Chawla

Erol Girt

Kirk Hayes

Methods are described for depositing thin films, such as those used in forming a photovoltaic cell or device. In particular embodiments, one or more layers are deposited on a substrate by plasma spraying over the substrate. A grain size of grains in each of the one or more layers is at least approximately two times greater than a thickness of the respective layer. Accordingly, large flat-grained structures are formed in each respective layer, and grain boundaries within each respective layer can be minimized.

Plasma spray deposition of photovoltaic thin films with grain boundary minimization

In one embodiment, a method includes depositing a CIGS precursor layer onto a substrate, introducing a source-material layer into proximity with the precursor layer, where the source-material layer includes one or more of Cu, In, or Ga, and one or more of S or Se, and annealing the precursor layer in proximity with of the source-material layer, where the annealing is performed in a constrained volume, and where the presence of the source-material layer reduces decomposition of volatile species from the precursor layer during annealing.

Closed-space annealing process for production of CIGS thin-films

In one embodiment, a method includes depositing a chalcogenide precursor layer onto a substrate, introducing a cover into proximity with the precursor layer, and annealing the precursor layer in proximity with of the cover, where the annealing is performed in a constrained volume, and where the presence of the cover reduces decomposition of volatile species from the precursor layer during annealing.

Closed-space annealing of chalcogenide thin-films with volatile species

In one example embodiment, a sputter target structure for depositing semiconducting chalcogenide films is described. The sputter target includes a target body having a target body composition that comprises Cu(SeSTe), wherein the value of x is greater than or equal to approximately 0.5, the value of y is between approximately 0 and approximately 1, the value of z is between approximately 0 and approximately 1, and the total amount of Se, S, and Te phases in the target body composition comprise less than 50 volume percent of the target body composition.

Low melting point sputter targets for chalcogenide photovoltaic applications and methods of manufacturing the same

In one embodiment, a method includes depositing a photoactive layer onto a first substrate, depositing a contact layer onto the photoactive layer, attaching a second substrate onto the contact layer, and removing the first substrate from the photoactive layer, contact layer, and second substrate.

Reverse stack structures for thin-film photovoltaic cells

In particular embodiments, a method is described for depositing thin films, such as those used in forming a photovoltaic cell or device. In a particular embodiment, the method includes providing a substrate suitable for use in a photovoltaic device and plasma spraying one or more layers over the substrate, the grain size of the grains in each of the one or more layers being at least approximately two times greater than the thickness of the respective layer.

Deposition of photovoltaic thin films by plasma spray deposition

In particular embodiments, a method is described for forming photovoltaic devices that includes providing a substrate suitable for use in a photovoltaic device, depositing a conductive contact layer over the substrate, depositing a salt solution over the surface of the conductive contact layer, the solution comprising a volatile solvent and an alkali metal salt solute, and depositing a semiconducting absorber layer over the solute residue left by the evaporated solvent.

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Palo Alto, CA, United States of America

Brian Josef Bartholomeusz