Avogy, Inc.

Verily Life Sciences LLC

Brian Joel Alvarez

Donald Ray Disney

Hui Nie

Patrick James Lazlo Hyland

David P Bour

Isik C Kizilyalli

Andrew Paul Edwards

Madhan M Raj

Jeffrey George Linhardt

Hojr Pisheh

Parissa Heshmati

A protective layer for use on a sensor during a manufacturing process avoids damage to the sensor and keeps the sensor surface clean during lens fabrication. The protective layer includes a non-cross-linked, water-soluble polymer layer and an anhydrous, cross-linkable, methacrylate-based formulation layer, temporarily applied to a surface of the sensor. The protective layer may be used to protect the sensor during a manufacturing process by applying the non-cross-linked, water-soluble polymer layer and the anhydrous, cross-linkable, methacrylate-based formulation layer consecutively onto the surface of the sensor to form the protective layer; affixing the sensor to a substrate; fabricating a device that includes the substrate; and subsequently removing the protective layer from the surface of the sensor.

Multi-layer polymer formulations used for sensor protection during device fabrication

An MPS diode includes a III-nitride substrate characterized by a first conductivity type and a first dopant concentration and having a first side and a second side. The MPS diode also includes a III-nitride epitaxial structure comprising a first III-nitride epitaxial layer coupled to the first side of the substrate, wherein a region of the first III-nitride epitaxial layer comprises an array of protrusions. The III-nitride epitaxial structure also includes a plurality of III-nitride regions of a second conductivity type, each partially disposed between adjacent protrusions. Each of the plurality of III-nitride regions of the second conductivity type comprises a first section laterally positioned between adjacent protrusions and a second section extending in a direction normal to the first side of the substrate. The MPS diode further includes a first metallic structure electrically coupled to one or more of the protrusions and to one or more of the second sections.

Method of fabricating a gallium nitride merged P-I-N schottky (MPS) diode by regrowth and etch back

A method for fabricating a vertical gallium nitride (GaN) power device can include providing a GaN substrate with a top surface and a bottom surface, forming a device layer coupled to the top surface of the GaN substrate, and forming a metal contact on a top surface of the vertical GaN power device. The method can further include forming a backside metal by forming an adhesion layer coupled to the bottom surface of the GaN substrate, forming a diffusion barrier coupled to the adhesion layer, and forming a protection layer coupled to the diffusion barrier. The vertical GaN power device can be configured to conduct electricity between the metal contact and the backside metal.

GaN power device with solderable back metal

Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode by regrowth and etch back

An embodiment of a semiconductor device includes a gallium nitride (GaN) substrate having a first surface and a second surface. The second surface is substantially opposite the first surface, at least one device layer is coupled to the first surface, and a backside metal is coupled to the second surface. A top metal stack is coupled to the at least one device layer. The top metal stack includes a contact metal coupled to a surface of the at least one device layer, a protection layer coupled to the contact metal, a diffusion barrier coupled to the protection layer, and a pad metal coupled to the diffusion barrier. The semiconductor device is configured to conduct electricity between the top metal stack and the backside metal.

Bondable top metal contacts for gallium nitride power devices

Growing community of inventors

San Jose, CA, United States of America

Brian Joel Alvarez