Micron Technology Incorporated

Brian J Soderling

Akira Goda

Krishna Kumar Parat

Michael P Violette

Kenneth William Marr

Jeremy Binfet

Giuseppina Puzzilli

James E Davis

Chiara Cerafogli

Tejas Krishnamohan

Joshua Daniel Tomayer

Tyson M Stichka

Arnaud A Furnemont

Koichi Kawai

Koichi Kawal

Some embodiments include apparatuses and methods of fabricating the apparatuses. One of the apparatuses includes a substrate of a semiconductor die; a memory cell portion located over a first portion of the substrate; a conductive pad portion located over a second portion of the substrate and outside the memory cell portion; and a sensor circuit including a portion located over the second portion of the substrate and under the conductive pad portion. The conductive pad portion includes conductive pads. Each of the conductive pads is part of a respective electrical path coupled to a conductive contact of a base outside the substrate.

Memory device including circuitry under bond pads

Memory devices and methods are disclosed, including a method involving erasing a block of memory cells. After erasing the block, and before subsequent programming of the block, a number of bad strings in the block are determined based on charge accumulation on select gate transistors. The block is retired from use if the number of bad strings exceeds a threshold. Additional embodiments are disclosed.

In-field block retiring

Growing community of inventors

Eagle, ID, United States of America

Brian J Soderling