Superconductor Technologies Inc.

Brian H Moeckly

Ward Ruby

Viktor Gliantsev

Balam A Willemsen

Shing-jen (Luke) Peng

Patrick J Turner

Jeong-Uk Huh

Kurt Von Dessonneck

Christopher Yung

Shing-Jen Peng

Viktor Gilantsev

A reactor apparatus includes a first chamber coupled to a first source of vacuum, a monitor chamber isolated from the first chamber and coupled to a second source of vacuum, and at least one removable deposition monitor disposed in the monitor chamber.

Reactor device with removable deposition monitor

This invention enables high temperature superconducting (HTS) metal oxide materials ReBaCuO((RE)BCO) to carry high superconducting currents at high current densities under high magnetic field (&#x2267;3 Tesla), in all orientations of the field, and at high temperatures (65 Kelvin). The superconductor is adapted to carry current in a superconducting state, with the superconductor having a current (I) carrying capacity of at least 250 A/cm width, in a field of 3 Tesla (T), at 65 Kelvin (K), at all angles relative to the coated conductor. More preferably, the current carrying capacity extends through the range of substantially 250 A/cm to 500 A/cm. Excellent performance is achieved by use of intrinsic pinning centers in the HTS compound. The invention preferably does not require the addition of extra elements or compounds or particles to the superconducting compound during synthesis, nor does it require extra process steps.

Coated conductor high temperature superconductor carrying high critical current under magnetic field by intrinsic pinning centers, and methods of manufacture of same

The films of this invention are high temperature superconducting (HTS) thin films specifically optimized for microwave and RF applications. In particular, this invention focuses on compositions with a significant deviation from the 1:2:3 stoichiometry in order to create the films optimized for microwave/RF applications. The RF/microwave HTS applications require the HTS thin films to have superior microwave properties, specifically low surface resistance, R, and highly linear surface reactance, X, i.e. high J. As such, the invention is characterized in terms of its physical composition, surface morphology, superconducting properties, and performance characteristics of microwave circuits made from these films.

[object Object]

A device for fabricating thin films on a substrate includes a vacuum chamber, a rotatable platen configured to hold one or more substrates within the vacuum chamber, and a housing disposed within the vacuum chamber. The housing contains a heating element and is configured to enclose an upper surface of the platen and a lower portion configured to partially enclose an underside surface of the platen which forms a reaction zone. A heated evaporation cell is operatively coupled to the lower portion of the housing and configured to deliver a pressurized metallic reactant to the reaction zone. The device includes a deposition zone disposed in the vacuum chamber and isolated from the reaction zone and is configured to deposit a deposition species to the exposed underside of the substrates when the substrates are not contained in the reaction zone.

Device and method for fabricating thin films by reactive evaporation

A method of forming MgBfilms in-situ on a substrate includes the steps of (a) depositing boron onto a surface of the substrate in a deposition zone; (b) moving the substrate into a reaction zone containing pressurized, gaseous magnesium; (c) moving the substrate back into the deposition zone; and (d) repeating steps (a)-(c). In a preferred embodiment of the invention, the substrate is moved into and out of the deposition zone and the reaction zone using a rotatable platen.

Growing community of inventors

Menlo Park, CA, United States of America

Brian H Moeckly