International Business Machines Corporation

Other

Brian H Desilets

Louis L Hsu

Chang-Ming Hsieh

Thomas A Gunther

Krishna Gandhi Sachdev

John H Keller

Harbans S Sachdev

Richard D Kaplan

Charles J Hendricks

William C Heybruck, Deceased

Susan A Sanchez

An air conditioning drain line system is disclosed where the drain line includes an access connector pipe for inserting a chemical delivery strand of material into the drain pipes. The connector pipe may be a Y-shaped connector pipe and retain the strand. The strand may extend into the drain pipes and around an elbow in the pipes. The elbow may be designed to receive standard drain pipes into receiving inlets and create a smooth flow channel through the pipe without any elevational differences between the inner diameter of the elbow at the junction point of the elbow and the received pipes and the inner diameter of the received pipes.

Air conditioning drain line system

A chemical delivery system is provided. The chemical delivery system includes a strand of material having a plurality of chemical delivery tablets secured thereto. The strand of material can be inserted into a drain pipe opening and retained within the drain pipe by a retention disc and/or a removable cap. The chemical delivery tablets are measurably consumed as fluid or other condensate material flows through the drain pipe. The strand of material may then be readily replaced with a new strand on a period basis without necessitating disassembly of the pipe thereby preventing growth of algae or other organic material in the drain pipe.

Chemical delivery system for AC drain line

Air conditioning drain line trap

A door handle assembly and a method relating to using the door handle assembly are disclosed herein. In various embodiments, the door handle assembly include a grasping area and a securing area. The securing area may include a plurality of apertures, wherein each of the plurality of apertures has one or more flanges. The one or more flanges may be pliable and retain a removable securing device. The door handle may be made using injection molded plastics. The method of using the door handle assembly may provide a ready to use door handle assembly with the door handle having pre-inserted removable securing devices ready to be assembled to a door.

Door handle and method for use

A mounting apparatus and a method relating to using the mounting apparatus. The mounting apparatus may include a mounting panel having a plurality of mounting holes and a plurality of apertures, and at least one utility bracket having at least one mounting mechanism and at least one anchor. Each of the plurality of apertures may include a first section having at least a pliable locking tab and a second section having at least a slot. The at least one anchor may include a left flange, a right flange, and a central spline. Each of the plurality of apertures of the mounting panel may be configured to receive the at least one anchor of the at least one utility bracket.

Mounting apparatus and method for use

A method of manufacturing a vertical bipolar transistor including the steps of: providing a semiconductor substrate including a first region of a first conductivity type; forming an extrinsic base region of a second conductivity type in the surface of the first region, the extrinsic base region generally bounding a portion of the first region; forming by ion implantation a linking region of the second conductivity type in the surface of the bounded portion of the first region so as to electrically link generally opposing edges of the extrinsic base region through the linking region; forming an insulating spacer over the junction between the extrinsic base region and the linking region so as to generally bound a portion of the linking region within the portion of the first region; etching the surface of the bounded portion of the linking region a short distance into the linking region; forming by epitaxial growth a first layer of semiconductor material of the second conductivity type on the etched surface of the bounded portion of the linking region; heating the semiconductor substrate to form an intrinsic base region at least partially within the first layer and to form an electrical connection between the intrinsic and extrinsic base regions through the linking region; and forming a second region of the first conductivity type in the surface of the intrinsic base region.

Vertical bipolar transistor with recessed epitaxially grown intrinsic

A method of fabricating a lateral transistor is provided, including the steps of: providing a body of semiconductor material including a device region of a first conductivity type; patterning the surface of the device region to define a first transistor region; filling the patterned portion of the device region surrounding the first transistor region with an insulating material to a height generally equal to the surface of with first transistor region; removing portions of the insulating material so as to define a pair of trenches generally bounding opposite sides of the first transistor region; filling the pair of trenches with doped conductive material of opposite conductivity type to the first transistor region; and annealing the semiconductor body whereby to form second and third transistor regions of opposite conductivity type to the first transistor region in the opposing sides of the first transistor region.

Lateral transistor and method of making same

A method of fabricating a lateral transistor is provided, including the steps of: providing a body of semiconductor material including a device region of a first conductivity type; patterning the surface of the device region to define a first transistor region; filling the patterned portion of the device region surrounding the first transistor region with an insulating material to a height generally equal to the surface of with first transistor region; removing portions of the insulating material so as to define a pair of trenches generally bonding opposite sides of the first transistor region; filling the pair of trenches with doped conductive material of opposite conductivity type to the first transistor region; and annealing the semiconductor body whereby to form second and third transistor regions of opposite conductivity type to the first transistor region in the opposing sides of the first transistor region.

Method of making a lateral transistor

A method of image transfer transfer into a substrate by reactive ion etch technique is provided. A mask layer on said substrate is formed by a spin-on film which film is comprised of a mixed organo-functional zircoaluminate or zircotitanate material. The film is dried and cured, and thereafter coated with a radiation sensitive resist. The reist is imagewise exposed and developed, which developing preferably also removes the pattern in the mask exposing the substrate. The substrate is then reactive ion etched, the remaining film acting as a barrier material to the etching.

Method of selective reactive ion etching of substrates

An improved plasma reactor for uniformly etching a large number of semiconductor wafers at a reduced plasma potential includes, in one embodiment, a grounded plate mounted intermediate the cathode and the top plate of a reactor chamber, the top plate and the chamber walls forming the reactor anode. The grounded plate is spaced apart from the chamber top plate a distance sufficient to allow a plasma to be established between the grounded plate and the top plate, and the distance between the grounded plate and the cathode is large enough not to disturb the field in the proximity of the wafers being etched. The plate can be apertured to facilitate etchant gas flow. According to another embodiment of the invention at least two grounded plates are employed, spaced apart from each other and from the upper surface of the reactor plasma chamber.

Plasma etching reactor with reduced plasma potential

A reactive ion etching chamber structure is designed to provide operation with uniformity in electric field and generated plasma so as to produce uniform, contaminant-free etching over large batches of silicon wafers. The anode chamber structure is cylindrical and physically symmetrical with respect to a round cathode plate with the internal surfaces of the chamber being free of any apertures, holes, recesses, or the like, having an opening dimension larger than one tenth the thickness of plasma 'dark space'. Under normal reactive ion etching conditions, such opening dimension is 1.5 mm or less and the distance between cathode and anode internal surface is 3.0 mm, or less.

Reactive ion etching chamber

As etching progresses from one layer of material to another in reactive ion etching systems, the partial pressures of the reaction chamber gas components change. In constant pressure reactive ion etching systems, changes in chamber pressure are corrected by changes in the etchant species flow rate into the reaction chamber. By monitoring flow rate, information is obtained which may be used to identify the points where partial pressures change, and latter may, in turn, be used to derive etching points in the material being etched.

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Wappingers Falls, NY, United States of America

Brian H Desilets