Agere Systems Inc.

Brian Eric Thompson

Thomas Joseph Krutsick

Bailey R Jones

John Charles Desko

Chung-Ming Hsieh

Steven W Wallace

Steve Wallace

Michael J Evans

Tzu-Yen Hsieh

John Michael Siket, Jr

The present invention provides a semiconductor device, a method of manufacture therefor, and an integrated circuit including the same. In one advantageous embodiment, the semiconductor device includes a doped layer located over a semiconductor substrate, and an isolation trench located in the doped layer and having a dielectric layer located on a sidewall thereof. The semiconductor device may further include a conductive material located within the isolation trench and an interconnect that electrically connects the conductive material and the doped layer.

Semiconductor device having an interconnect that electrically connects a conductive material and a doped layer, and a method of manufacture therefor

A Schottky diode is fabricated by a sequence of fabrication by a sequence of fabrication steps. An active region of a semiconductor substrate is defined in which a Schottky diode is fabricated. At least first and second layers of insulating material are applied over the active area. A first layer of insulating material, having a first etching rate, is applied over the active area. A second layer of insulating material having a second, greater, etch rate is applied over the first layer of insulating material to a thickness that is about twice the thickness of the first layer of insulating material. The insulating material is patterned and a window is etched through the layers of insulating material to the semiconductor substrate. Metal is applied and unwanted metal is etched away leaving metal in the window forming a Schottky contact therein. One or more barrier layers may be employed.

Field plated schottky diode and method of fabrication therefor

The present invention provides a semiconductor device, a method of manufacture therefor, and an integrated circuit including the semiconductor device. The semiconductor device may include a well doped with a P-type dopant located over a semiconductor substrate. The semiconductor device may further include a buried layer including the P-type dopant located between the well and the semiconductor substrate, and a gate located over the well.

Semiconductor device having a buried layer for reducing latchup and a method of manufacture therefor

Field plated Schottky diode

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Sinking Spring, PA, United States of America

Brian Eric Thompson