Texas Instruments Corporation

Brian E Goodllin

Robert Kraft

David Gerald Farber

The present invention provides an interconnect structure, a method of manufacture therefore, and a method for manufacturing an integrated circuit including the same. The method for forming the interconnect structure, among other steps, includes subjecting a first portion () of a substrate () to a first etch process, the first etch process designed to etch at a first entry angle (&#x3b8;), and subjecting a second portion () of the substrate () to a second different etch process, the second different etch process designed to etch at a second lesser entry angle (&#x3b8;).

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Dallas, TX, United States of America

Brian E Goodllin