Raytheon Company

Brian D Schultz

John Logan

Eduardo M Chumbes

Kiuchul Hwang

William E Hoke

Theodore D Kennedy

Abbas Torabi

Amanda Kerr

Christos Thomidis

Shahed Reza

Jason C Soric

Robert E Leoni

Nicholas J Kolias

Adam E Peczalski

Apparatus and associated methods relate to forming an epitaxial layer of aluminum on an aluminum-nitride compound. The aluminum is epitaxially grown on the crystalline aluminum-nitride compound by maintaining temperature of a crystalline aluminum-nitride compound below a cluster-favoring temperature threshold within a vacuum chamber. Then, the crystalline aluminum-nitride compound is exposed to atoms of elemental aluminum for a predetermined time duration. The aluminum is epitaxially grown in this fashion for a predetermined time duration so as to produce a layer of epitaxial aluminum of a predetermined thickness. Such epitaxially-grown mono-crystalline aluminum has a lower resistivity than poly-crystalline aluminum.

Epitaxial growth of aluminum on aluminum-nitride compounds

The present invention may comprise a grooming and dematting tool with a housing, a plurality of tines extending outward from the housing, each tine linked with a linkage arm, each linkage arm independently activated by a crankshaft to urge the distal ends of each tine back and forth, up, and down, or in other translational or extending movement pattern. The tines urge hair or fur of a pet to untangle or remove knots, snags, matting, and imperfections in the coat, while optionally cooperating with scissoring cutting blades to cut hair from the coat of the pet.

Pet grooming device with scissoring action between a linkage arm and tines

A strain compensated heterostructure comprising a substrate comprising silicon carbide material; a first epitaxial layer comprising single-crystal aluminum nitride material formed on a top surface of the substrate; a second epitaxial layer formed on the first epitaxial layer opposite the top surface of the substrate, the second epitaxial layer comprising single-crystal scandium aluminum nitride material; and a third epitaxial layer formed on the second epitaxial layer opposite the first epitaxial layer, the third layer comprising single-crystal aluminum nitride material.

Strain compensated rare earth group III-nitride heterostructures

An Enhancement-Mode HEMT having a gate electrode with a doped, Group III-N material disposed between an electrically conductive gate electrode contact and a gate region of the Enhancement-Mode HEMT, such doped, Group III-N layer increasing resistivity of the Group III-N material to deplete the 2DEG under the gate at zero bias.

Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistors

A High Electron Mobility Transistor structure having: a GaN buffer layer disposed on the substrate; a doped GaN layer disposed on, and in direct contact with, the buffer layer, such doped GaN layer being doped with more than one different dopants; an unintentionally doped (UID) GaN channel layer on, and in direct contact with, the doped GaN layer, such UID GaN channel layer having a 2DEG channel therein; a barrier layer on, and in direct contact with, the UID GaN channel layer. One of the dopants is beryllium and another one of the dopants is carbon.

Gallium nitride high electron mobility transistors (HEMTs) having reduced current collapse and power added efficiency enhancement

A semiconductor device having a substrate, a pair of Group III-Nitride layers on the substrate forming: a heterojunction with a 2 Dimensional Electron Gas (2DEG) channel in a lower one of the pair of Group III-Nitride layers, a cap beryllium doped Group III-Nitride layer on the upper one of the pair of Group III-Nitride layers; and an electrical contact in Schottky contact with a portion of the cap beryllium doped, Group III-Nitride layer.

Depletion mode high electron mobility field effect transistor (HEMT) semiconductor device having beryllium doped Schottky contact layers

A method includes providing a single crystal substrate having a buffer layer on a surface of the substrate. The buffer layer provides a transition between the crystallographic lattice structure of the substrate and the crystallographic lattice structure of the semiconductor layer and has its resistivity increased by ion implanting a dopant into the buffer layer; and forming semiconductor layer on the ion implanted buffer layer. The semiconductor layer may be a wide bandgap semiconductor layer having a high electron mobility transistors formed therein.

Semiconductor material growth of a high resistivity nitride buffer layer using ion implantation

A structure having: a nucleation layer; and a Group III-Nitride structure disposed on a surface of the nucleation layer, the Group III-Nitride structure comprising a plurality of pairs of stacked Group III-Nitride layers, each one of the pairs of layers having a lower layer having a 3D growth structure and each one of the upper one of the pairs of layers having a 2D growth structure. Each one of the lower layers at completion has a surface roughness greater than a surface roughness at completion of an upper one of the pair of layers. Interfaces between each one of the upper layers and each one of the lower layers of the plurality of pairs of stacked Group III-Nitride layers have crystallographic dislocation combinations and/or annihilations therein.

Group III-nitride structure having successively reduced crystallographic dislocation density regions

A semiconductor structure having a buffer layer, a pseudomorphic, impurity doped, back-barrier layer disposed on the buffer layer, a channel layer disposed on the back-barrier layer, the channel layer lattice matched to the buffer layer, and a top barrier layer disposed on the channel layer. A Group III-Nitride transition layer is disposed between the buffer layer and the pseudomorphic back-barrier layer. The buffer layer and the pseudomorphic back-barrier layer are both Group III-Nitride materials. The Group III-Nitride material of the buffer layer is different from the Group III-Nitride material in the back-barrier layer. The back-barrier layer has a wider bandgap of than the buffer layer bandgap. The composition of the Group III-Nitride material in the transition layer varies from the composition of the Group III-Nitride material in the buffer layer to the composition of the Group III-Nitride material in the pseudomorphic back-barrier layer as a function of distance from the buffer layer.

Group III&#x2014;nitride double-heterojunction field effect transistor

Waffle cutter

A semiconductor structure having a Group III-N buffer layer and a Group III-N barrier layer in direct contact to form a junction between the Group III-V buffer layer the Group III-N barrier layer producing a two dimensional electron gas (2DEG) channel, the Group III-N barrier layer having a varying dopant concentration. The lower region of the Group III-N barrier layer closest to the junction is void of intentionally introduced dopant and a region above the lower region having intentionally introduced, predetermined dopant with a predetermined doping concentration above 1&#xd7;10atoms per cm.

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Lexington, MA, United States of America

Brian D Schultz