University College Cork

Oculus, Vr, LLC

The Provost, Fellows, Foundation Scholars, and the Other Members of Board, of the College of the Holy and Undivided Trinity of Queen Elizabeth Near Dublin

University of Ireland, Cork

Brian Corbett

Pleun Maaskant

Paul Martin Lambkin

Bill Henry

Wei-Hua Guo

John F Donegan

Brendan John Roycroft

Richard Phelan

Qiao-Yin Lu

Edmund Anthony O'Carroll

Pleun Peter Maaskant

The invention relates to a SLED device emitting light from a substrate side, configured to suppress lasing, and comprising a reflective element () on a front surface of a substrate () configured to redirect an optical beam (light) onto a back surface of the substrate (). In one embodiment the device can be used for making a compact RGB (red-green-blue) projector.

Superluminescent light emitting diode (SLED) device

An integrated LED device is provided. The LED device includes a substrate. The LED device includes a semiconductor material including a light generating layer and positioned on the substrate. The semiconductor material and/or the substrate are configured to control light internally to output quasi-collimated light from a light emitting surface of the LED device. The LED device includes an optical component positioned at the light emitting surface and configured to receive quasi-collimated light exiting the light emitting surface and to alter one or more optical properties of at least some beams of the quasi-collimated light.

Micro-LED array with filters

A tunable laser device () comprises integrally formed first and second ridge waveguides (). A longitudinally extending ridge () defines first and second light guiding regions () of the first and second waveguides () A plurality of first and second slots () extending laterally in the ridge () adjacent the first and second waveguides (), produce first and second mirror loss spectra of the respective first and second waveguides () with minimum peak values at respective first and second wavelength values. The spacing between the second slots () is different to that between the first slots () so that with one exception the minimum peak values of the first and second mirror loss spectrum occur at different wavelength values. The first and second waveguides () are independently pumped with variable currents to selectively vary the common wavelength at which the minimum peak values of the first and second mirror loss spectra occur to produce Vernier tuning of the device.

Tunable laser device and a method for producing light of respective selectable wavelengths

An array of highly efficient micro-LEDs where each micro-LED is an integrated diode structure in a mesa, in which the mesa shape and the light-emitting region are chosen for optimum efficiency. A single one of the micro-LEDs includes, on a substrate and a semiconductor layer, a mesa, a light emitting layer, and an electrical contact. The micro-LEDs in this device have a very high EE because of their shape. Light is generated within the mesa, which is shaped to enhance the escape probability of the light. Very high EEs are achieved, particularly with a near parabolic mesa that has a high aspect ratio. The top of the mesa is truncated above the light-emitted layer (LEL), providing a flat surface for the electronic contact on the top of the semiconductor mesa. It has been found that the efficiency is high, provided the top contact has a good reflectivity value. Also, it has been found that efficiency is particularly high if the contact occupies an area of less than 16% of the truncated top mesa surface area. This feature also helps to achieve a more directional beam in the case of the device being an LED.

Light emitting mesa structures with high aspect ratio and near-parabolic sidewalls

This invention relates to generally to semiconductor devices, for example lasers and more particularly to single frequency lasers and is directed at overcoming problems associated with the manufacture of these devices. In particular, a laser device is provided formed on a substrate having a plurality of layers (), the laser device comprising at least one waveguide (for example a ridge) established by the selective removal of sections of at least one of the layers. The ridge () has at least one defect defining region (), the at least one defect defining region of the ridge defining a defect in the ridge. The width of the ridge is greater in the at least one defect defining region of the ridge than in adjacent sections of the ridge.

Single frequency laser

Growing community of inventors

Douglas, Ireland

Brian Corbett