International Business Machines Corporation

Globalfoundries Inc.

Brian Christopher Sapp

Lawrence Alfred Clevenger

Carl John Radens

Kevin Shawn Petrarca

Rainer Klaus Krause

Zhengwen O Li

Kevin M Prettyman

Gerd Pfeiffer

Harold John Hovel

Roger Allan Quon

Chandrasekhar Narayan

Gregory Allen Northrop

Timothy Joseph Dalton

Laertis Economikos

Matthew S Angyal

Maxime Darnon

Choongyeun Cho

Bernhard R Liegl

Ranier Krauser

An apparatus, system, and method are disclosed for a photovoltaic module, the photovoltaic module comprising a plurality of photovoltaic cells, a controllable infrared protection layer, and a protection switching means. The controllable infrared protection layer is for reducing the infrared radiation absorbed by the photovoltaic module, where the controllable infrared protection layer has a first state and a second state. When the infrared protection layer is in the first state the transmission of infrared radiation to the photovoltaic cells is higher than when the infrared protection layer is in the second state. The protection switching means is for switching the controllable infrared protection layer between the first state and the second state.

Photovoltaic module with a controllable infrared protection layer

Embodiments of the present invention provide a method of forming carbon nanotube based semiconductor devices. The method includes creating a guiding structure in a substrate for forming a device; dispersing a plurality of carbon nanotubes inside the guiding structure, the plurality of carbon nanotubes having an orientation determined by the guiding structure; fixating the plurality of carbon nanotubes to the guiding structure; and forming one or more contacts to the device. Structure of the formed carbon nanotube device is also provided.

Carbon nanotube device

An apparatus, system, and method are disclosed for restoring efficiency of a photovoltaic cell. An illumination module illuminates photovoltaic cells so the cells receive a time integrated irradiance equivalent to at least 5 hours of solar illumination. After illumination, an annealing module anneals the photovoltaic cells at a temperature above 90 degrees Celsius for a minimum of 10 minutes. In one embodiment, the illumination module illuminates the photovoltaic cells for a time integrated irradiance equivalent to at least 20 hours of solar illumination. In another embodiment, the illumination module illuminates the photovoltaic cells for a time integrated irradiance equivalent to at least 16 hours of solar illumination while being heated to at least 50 degrees Celsius. In another embodiment, a solar concentrator irradiates the photovoltaic cells in sunlight for at least 10 hours and increases the irradiance of solar illumination on the cells by a factor of 2 to 5.

Regeneration method for restoring photovoltaic cell efficiency

Disclosed is a synaptic element that uses electro-migration in an interconnect structure, wherein the interconnect structure is optimized to give control of resistivity change following current flow. The synaptic element exhibits resistivity that is a function of the amount (of charge) and direction of current flow, wherein a continuously variable resistance is obtained by controlling the volume of a designed void in the interconnect structure.

Structure and method for integrated synaptic element

A contiguous deep trench includes a first trench portion having a constant width between a pair of first parallel sidewalls, second and third trench portions each having a greater width than the first trench portion and laterally connected to the first trench portion. A non-conformal deposition process is employed to form a conductive layer that has a tapered geometry within the contiguous deep trench portion such that the conductive layer is not present on bottom surfaces of the contiguous deep trench. A gap fill layer is formed to plug the space in the first trench portion. The conductive layer is patterned into two conductive plates each having a tapered vertical portion within the first trench portion. After removing remaining portions of the gap fill layer, a device is formed that has a small separation distance between the tapered vertical portions of the conductive plates.

Self-aligned nano-scale device with parallel plate electrodes

A method and system to predict lithography focus error using chip topography data is disclosed. The chip topography data may be measured or simulated topography data. A plane is best fitted to the topography data, and residuals are computed. The residuals are then used to make a prediction regarding the focus error. The density ratio of metal to dielectric may also be used as a factor in determining the predicted focus error.

Method and system to predict lithography focus error using simulated or measured topography

Asset management for control of electric appliances comprises a keycode unit and an equipment unit embedded in an appliance. The keycode unit is located in a protected environment and relates to an asset management area. The equipment unit may store an appliance identification code. The keycode unit and the equipment unit may be in communication contact, whereby the equipment unit sends positioning coordinates to the keycode unit, and wherein the equipment unit is adapted to lock the appliance via the lock unit, in response to a lock signal that the equipment unit receives from the keycode unit, if the appliance moves outside the asset management area.

Asset management infrastructure

A photovoltaic module () with a plurality of solar cells () interconnected in serial and/or parallel arrangement within the module () is equipped with an overheat protection system () for suppressing damages of the photovoltaic module () due to defects of the solar cells (). The overheat protection system () comprises a heat sensor () which is thermally coupled to a solar cell (). The heat sensor () is physically integrated into an electrical switch () which is electrically connected to said solar cell ().

Solar module with overheat protection

A method for manufacturing a photovoltaic solar cell device includes the following. A p-n junction having a first doping density is formed. Formation of the p-n junction is enhanced by introducing a second doping density to form high doped areas for a dual emitter application. The high doped areas are defined by a masking process integrated with the formation of the p-n junction, resulting in a mask pattern of the high doped areas. A metallization of the high doped areas occurs in accordance with the mask pattern of the high doped areas.

Photovoltaic solar cell device manufacture

A method for manufacturing one or more electrically contactable grids on at least one surface of a semiconductor substrate for use in a solar cell product includes the following. A heat-sensitive masking agent layer is deposited on the surface of the substrate of the solar cell product. The masking agent layer is locally heated to form a grid mask. Selected parts of the masking agent layer defined by locally heating are removed to form openings in the grid mask. A contact metallization is applied on the grid mask.

Electrically contactable grids manufacture

The invention relates to a manufacturing process of a photovoltaic solar cell () comprising:

Manufacturing process for making photovoltaic solar cells

A method of manufacturing a photovoltaic cell using a semiconductor wafer having a front side and a rear side, wherein the photovoltaic cell produces electricity when the front side of the semiconductor wafer is illuminated.

Method of manufacturing a photovoltaic cell

An aluminum lateral interconnect of a Back End of the Line (BEOL) is used to define the x and y dimensions of a through-silicon via in a semiconductor chip formed in a silicon substrate. The TSV includes one or more aluminum annulus formed on a surface of the substrate, and a deep trench in the substrate having a diameter that is determined by the diameter of the aluminum annulus. The annulus can also be provided with a conductive strap upon which a capacitor can be formed. The strap can also be used to provide a connection of the TSV to other BEOL interconnects.

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Hopewell Junction, NY, United States of America

Brian Christopher Sapp