Lsi Logic Corporation

Siliconix Incorporated

Brian Cheung

Mike F Chang

Anthony Yap Wong

Brian Harold Floyd

Daniel Wong

Min Juang

Eric Chan

Chin H Ho

Karen Lee

In the present method, a semiconductor substrate is provided with an epitaxial layer thereon. A source/drain region is provided in a portion of the epitaxial layer, and a plurality of trenches are etched in the epitaxial layer and extend into the substrate, to define a plurality of mesas. An oxide layer of generally uniform thickness is provided over the mesas and in the trenches, and a polysilicon layer is provided over the oxide layer and is etched so that the oxide layer overlying the mesas is exposed, and the top surface of the polysilicon within the trenches is below the level of the tops of the mesas. A layer of spin-on-glass (SOG) is provided, and the SOG layer and oxide layer are etched substantially to the level of the tops of the mesas, to expose the tops of the mesas and to leave the portions of the SOG over the respective polysilicon portions in the trenches substantially coplaner with the tops of the mesas. A conductive layer is provided over the remaining portions of the SOG layer and the tops of the mesas.

Method of fabricating a field effect transistor

A CMOS driver circuit which differentially drives a pair of transmission lines at a first terminal in response to a signal on the CMOS driver circuit's input terminal for reception of said signal at a second terminal is provided. The driver circuit has two pairs of drive transistors. Each drive transistor has first and second source/drains and a gate. Each drive transistor pair is connected to one of said transmission line pair, and has a NMOS transistor and a PMOS transistor.

CMOS Differential driver circuit for high offset ground

Growing community of inventors

San Jose, CA, United States of America

Brian Cheung