Saint-Gobain Ceramics & Plastics, Inc.

Centre National De La Recherche Scientifique

Saint-Gobain Centre De Recherches Et D'etudes Europeen

Brian C LaCourse

Morteza Zandi

Anne B Hardy

Xiaofeng Peng

Qiwei Chen

Bruno Viana

Ara Vartabedian

Hélène Laetitia Rétot

Yeshwanth Narendar

Guangyong Lin

Wesley R Robbins

Hélène Loetitia Rétot

Daniel René Urffer

A material including a body including BOcan include lattice constant c of at most 12.318. X can be at least 0.85 and at most 1. In a particular embodiment, 0.90&#x2264;X&#x2264;1. In another particular embodiment, lattice constant a can be at least 5.383 and lattice constant c can be at most 12.318. In another particular embodiment, the body can consist essentially of BO.

Material including boron suboxide and method of forming same

A sintered ceramic component can have a final composition including at least 50 wt. % MgO and at least one desired dopant, wherein each dopant of the at least one desired dopant has a desired dopant content of at least 0.1 wt. %. All impurities (not including the desired dopant(s)) are present at a combined impurity content of less than 0.7 wt. %. A remainder can include AlO. The selection of dopants can allow for better control over the visual appearance of the sintered ceramic component, reduces the presence of undesired impurities that may adversely affect another part of an apparatus, or both. The addition of the dopant(s) can help to improve the sintering characteristics and density as compared to a sintered ceramic component that includes the material with no dopant and a relatively low impurity content.

Sintered ceramic component and a process of forming the same

A scintillation device includes a ceramic scintillator body that includes a polycrystalline ceramic scintillating material comprising gadolinium. The polycrystalline ceramic scintillating material is characterized by a pyrochlore crystallographic structure. A method of producing a ceramic scintillator body includes preparing a precursor solution including a rare earth element precursor, a hafnium precursor, and an activator (Ac) precursor. The method also includes obtaining a precipitate from the solution and calcining the precipitate to produce a polycrystalline ceramic scintillating material including the rare earth element, hafnium, and the activator, and having a pyrochlore titrating the precursor solution into the precipitant solution structure.

Ceramic scintillator body and scintillation device

A ceramic scintillator body includes a polycrystalline ceramic scintillating material having a substantially cubic crystallographic structure. The polycrystalline ceramic scintillating material has a chemical composition represented by a general formula LUGdO:Ac, where x is greater than zero and less than two, and where Ac is an activator.

A polycrystalline ceramic scintillator body includes a ceramic scintillating material comprising an oxide of gadolinium (Gd) and a second rare earth element (Re). The ceramic scintillating material has a composition, expressed in terms of molar percentage of oxide constituents, that includes greater than fifty-five percent (55%) GdOand a minority percentage Of ReO. The ceramic scintillating material includes an activator.

A method of producing a rare earth oxysulfide scintillating ceramic body includes heat treatment to form a consolidated body, followed by gas hot isostatic pressing (GHIPing). A powder is first provided having the general formula (MLn)OS, wherein M is a rare earth element, and Ln is at least one element selected from the group consisting of Eu, Ce, Pr, Tb, Yb, Dy, Sm, and Ho, and 1&#xd7;10&#x3c;X&#x3c;2&#xd7;10. The powder is heat treated to form a consolidated body having closed porosity, wherein heat treating is carried out at a temperature T. The consolidated body is GHIPed to a density not less than 99% of theoretical density, in a GHIPing environment having a temperature T, where 1100&#xb0; C.&#x3c;T&#x3c;1500&#xb0; C., to thereby form a densified body.

Rare earth oxysulfide scintillator and methods for producing same

An electrostatic chuck for supporting a semiconductor wafer, including: a chuck body having a dielectric region and an insulating region, the insulating region having a higher electrical resistivity than the dielectric region, an electrode embedded in the chuck body, and a barrier layer provided between dielectric region and the insulating region.

Electrostatic chucks having barrier layer

An electrostatic chuck is provided which includes a ceramic body comprising aluminum nitride (AlN), and at least one electrode in the ceramic body. According to a particular feature of this embodiment, the aluminum nitride has a resistivity ratio &#x3c1;/&#x3c1;less than about 5. In this regard, &#x3c1;represents the resistivity of the electrostatic chuck at 10 applied volts while &#x3c1;represents the resistivity of the AlN material at 500 applied volts.

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Pepperell, MA, United States of America

Brian C LaCourse