Cymer, Inc.

Tcz Pte. Ltd.

Brian C Klene

Palash P Das

Alexander Igorevich Ershov

Richard L Sandstrom

Xiaojiang Jason Pan

Scot T Smith

Steve Grove

R Kyle Webb

David J Warkentin

Herve A Besaucele

Paul C Melcher

Ronald L Spangler

Shahryar Rokni

Robert B Saethre

Leonard Lublin

Bruce E Bolliger

Partiv S Patel

A gas discharge laser crystallization apparatus and method for performing a transformation of a crystal makeup or orientation in the substrate of a workpiece is disclosed which may comprise, a multichamber laser system comprising, a first laser unit comprising, a first and second gas discharge chamber; each with a pair of elongated spaced apart opposing electrodes contained within the chamber, forming an elongated gas discharge region; a laser gas contained within the chamber comprising a halogen and a noble gas selected to produce laser light at a center wavelength optimized to the crystallization process to be earned out on the workpiece; a power supply module comprising, a DC power source; a first and a second pulse compression and voltage step up circuit connected to the DC power source and connected to the respective electrodes, comprising a multistage fractional step up transformer having a plurality of primary windings connected in series and a single secondary winding passing through each of the plurality of primary windings, and a solid state trigger switch; and a laser timing and control module operative to time the closing of the respective solid state switch based upon operating parameters of the respective first and second pulse compression and voltage step up circuit to effect operation of the first and second laser units as either a POPA configured laser system or a POPO configured laser system to produce a single output laser light pulse beam. As a POPA laser system relay optics may be operative to direct a first output laser light pulse beam from the first laser unit into the second gas discharge chamber; and, the timing and control module operates to create a gas discharge between the second pair of electrodes while the first output laser light pulse beam is transiting the second discharge region, within plus or minusns and as a POPO, combining optics combine the output beams, and timing creates pulse separation in the combined output a preselected time plus or minus 3 ns.

Very high energy, high stability gas discharge laser surface treatment system

The present invention provides a modular high repetition rate ultraviolet gas discharge laser light source for a production line machine. The system includes an enclosed and purged beam path for delivery the laser beam to a desired location such as the entrance port of the production line machine. In preferred embodiments, the production line machine is a lithography machine and two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. This MOPA system is capable of output pulse energies approximately double the comparable single chamber laser system with greatly improved beam quality. A pulse stretcher more than doubles the output pulse length resulting in a reduction in pulse power (mJ/ns) as compared to prior art laser systems. This preferred embodiment is capable of providing illumination at a lithography system wafer plane which is approximately constant throughout the operating life of the lithography system, despite substantial degradation of optical components.

Laser lithography light source with beam delivery

The present invention provides a modular high repetition rate ultraviolet gas discharge laser light source for a production line machine. The system includes an enclosed and purged beam path with beam pointing control for delivery the laser beam to a desired location such as the entrance port of the production line machine. In preferred embodiments, the production line machine is a lithography machine and two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. This MOPA system is capable of output pulse energies approximately double the comparable single chamber laser system with greatly improved beam quality. A pulse stretcher more than doubles the output pulse length resulting in a reduction in pulse power (mJ/ns) as compared to prior art laser systems. This preferred embodiment is capable of providing illumination at a lithography system wafer plane which is approximately constant throughout the operating life of the lithography system, despite substantial degradation of optical components.

Lithography laser with beam delivery and beam pointing control

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La Jolla, CA, United States of America

Brian C Klene