Motorola Corporation

Brian Bowers

Jonathan K Abrokwah

Matthias Passlack

Corey D Overgaard

Ravi Droopad

Bruce A Bernhardt

Ravindranath Droopad

Michael P LaMacchia

Sandeep Pendharkar

Jimmy Z Yu

Stephen B Clemens

Zhiyi (Jimmy) Yu

A gate quality oxide-compound semiconductor structure (10) is formed by the steps of providing a III-V compound semiconductor wafer structure (13) with an atomically ordered and chemically clean semiconductor surface in an ultra high vacuum (UHV) system (20), directing a molecular beam (26) of gallium oxide onto the surface of the wafer structure to initiate the oxide deposition, and providing a second beam (28) of atomic oxygen to form a Ga.sub.2 O.sub.3 layer (14) with low defect density on the surface of the wafer structure. The second beam of atomic oxygen is supplied upon completion of the first 1-2 monolayers of Ga.sub.2 O.sub.3. The molecular beam of gallium oxide is provided by thermal evaporation from a crystalline Ga.sub.2 O.sub.3 or gallate source, and the atomic beam of oxygen is provided by either RF or microwave plasma discharge, thermal dissociation, or a neutral electron stimulated desorption atom source.

Method of forming a gate quality oxide-compound semiconductor structure

A method of passivating interface states of oxide-compound semiconductor interfaces using molecular, atomic, or isotopic species wherein said species are applied before oxide deposition in ultra-high vacuum, or during interruption of oxide deposition in ultra-high vacuum (preferentially after oxide surface coverage of a submonolayer, a monolayer, or a few monolayers), or during oxide deposition in ultra-high vacuum, or after completion of oxide deposition, or before or after any processing steps of the as deposited interface structure. In a preferred embodiment, hydrogen or deuterium atoms are applied to a Ga.sub.2 O.sub.3 --GaAs interface at some point before, during, or after oxide deposition in ultra-high vacuum, or before or after any processing steps of the as deposited interface structure, at any given and useful substrate temperature wherein the atomic species can be provided by any one of RF discharge, microwave plasma discharge, or thermal dissociation.

Passivation of oxide-compound semiconductor interfaces

A method of fabricating submicron HFETs includes forming a buffered substrate structure with a supporting substrate of GaAs, a portion of low temperature AlGaAs grown on the supporting substrate at a temperature of approximately 300.degree. C., a layer of low temperature GaAs grown on the portion AlGaAs layer at a temperature of 200.degree. C., a layer of low temperature AlGaAs grown on the GaAs layer at a temperature of 400.degree. C., and a buffer layer of undoped GaAs grown on the second AlGaAs layer. Complementary pairs of HFETs can be formed on the buffered substrate structure, since the structure supports the operation of p and n type transistors equally well.

Method of fabricating submicron FETs with low temperature group III-V

A method of fabricating a gate quality oxide-compound semiconductor structure includes forming an insulating Ga.sub.2 O.sub.3 layer on the surface of a compound semiconductor wafer structure by a supersonic gas jet containing gallium oxide molecules and oxygen. In a preferred embodiment, a III-V compound semiconductor wafer structure with an atomically ordered and chemically clean semiconductor surface is transferred from a semiconductor growth chamber into an insulator deposition chamber via an ultra high vacuum preparation chamber. Ga.sub.2 O.sub.3 deposition onto the surface of the wafer structure is initiated by a supersonic gas jet pulse and proceeds via optimization of pulse duration, speed of gas jet, mole fraction of gallium oxide molecules and oxygen atoms, and plasma energy.

Fabrication method for a gate quality oxide-compound semiconductor

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Mesa, AZ, United States of America

Brian Bowers