Intel Corporation

Brian A Kaiser

Paul H Wermer

Venkatesan Murali

Nagesh K Vodrahalli

Kenzo Ishida

Yi-Ching Lin

Philip E Freiberger

Ragupathy V Giridhar

Anant Vaidyanathan

Embodiments of the present invention include forming a thin, conformal, high-integrity dielectric coating between conductive layers in a via-in-via structure in an organic substrate, using an electrocoating process to reduce loop inductance between the conductive layers. The dielectric coating is formed using a high dielectric constant material such as an organic polymer or an organic polymer mixture. Embodiments of the present invention also include forming a thin, dielectric coating between conductive layers on a substantially planar substrate material and providing an embedded capacitor to reduce loop inductance.

Circuit board with organic dielectric layer

Embodiments of the present invention include forming a thin, conformal, high-integrity dielectric coating between conductive layers in a via-in-via structure in an organic substrate using an electrocoating process to reduce loop inductance between the conductive layers. The dielectric coating is formed using a high dielectric constant material such as an organic polymer or an organic polymer mixture. Embodiments of the present invention also include forming a thin, dielectric coating between conductive layers on a substantially planar substrate material and providing an embedded capacitor to reduce loop inductance.

Capacitor

Electrocoating process to form a dielectric layer in an organic substrate to reduce loop inductance

A substrate which has a first conductive layer that is attached to a first dielectric layer. A second conductive layer is attached to the first dielectric layer. The second conductive layer may be a plated copper material that extends through a via opening of the dielectric and is attached to the first conductive layer. A third conductive layer is attached to the second conductive layer, including a sidewall of the third layer. A second dielectric can be attached to the third conductive layer. The third conductive layer may be a plated nickel-copper composition which improves the adhesion to subsequent layers in the substrate, particularly between the second dielectric and the sidewall of the second conductive layer.

Semi-additive process (SAP) architecture for organic leadless grid array packages

An integrated circuit package which may include a decal that is attached to a substrate which supports an integrated circuit. The decal may have a coefficient of thermal expansion that is different than a coefficient of thermal expansion of the substrate.

Dielectric decal for a substrate of an integrated circuit package

A method of forming a device having an intermetal dielectric film which is formed and annealed to prevent a significant quantity of ambient moisture from being absorbed by the intermetal dielectric film prior to passivation layer deposition is disclosed. An intermetal dielectric layer is formed over a substrate having a interconnection layer. A second interconnect layer is formed over the IMD layer. The substrate with the intermetal dielectric is annealed anytime between IMD formation and passivation layer deposition to produce a film that does not absorb a significant quantity of ambient moisture, and therefore, longer queue times can be utilized between the anneal and subsequent processing. The present invention reduces the amount of water in the device which reduces hot electron induced device degradation.

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Saratoga, CA, United States of America

Brian A Kaiser