Hrl Laboratories, LLC

The Boeing Company

Brett Z Nosho

Hasan Sharifi

Rajesh D Rajavel

Peter David Brewer

Larken Elizabeth Euliss

Minh B Nguyen

Pierre-Yves Delaunay

Nicole L Abueg

G Michael Granger

Keith John Davis

Terence J De Lyon

Sevag Terterian

Daniel Yap

Shuoqin Wang

Maryam Behroozi

Joseph Nedy

A simultaneous dual-band image sensor having a plurality of pixels includes a substrate, a common ground on the substrate, wherein each pixel includes a Bandabsorber layer on the common ground layer, a barrier layer on the Bandabsorber layer, a Bandabsorber layer on the barrier layer, a ring opening in the pixel formed by a removed portion of the Bandabsorber layer, a removed portion of the barrier layer and a removed portion of the Bandabsorber layer, wherein the ring opening does not extend through the Bandabsorber layer, a first contact on a portion of the Bandabsorber layer inside the ring, and a second contact on a portion of the Bandabsorber layer outside the ring. The Bandabsorber layer and the Bandabsorber layer are n-type, or the Bandabsorber layer and the Bandabsorber layer are p-type.

Simultaneous dual-band image sensors

A hyperspectral imager (HSI) includes a first thin film filter, the first thin film filter including a first quarter wave mirror, a second quarter wave mirror, and a low-refractive-index wedge between the first quarter wave mirror and the second quarter wave mirror. The low-refractive-index wedge has a height dimension such that a distance between the first quarter wave mirror and the second quarter wave mirror increases linearly along a length of the low-refractive-index wedge.

Thin-film filter based hyperspectral imager spanning an octave of long wavelength infrared regime

A simultaneous dual-band image sensor having a plurality of pixels includes a substrate, a common ground on the substrate, wherein each pixel includes a Band 1 absorber layer on the common ground layer, a barrier layer on the Band 1 absorber layer, a Band 2 absorber layer on the barrier layer, a ring opening in the pixel formed by a removed portion of the Band 2 absorber layer, a removed portion of the barrier layer and a removed portion of the Band 1 absorber layer, wherein the ring opening does not extend through the Band 1 absorber layer, a first contact on a portion of the Band 2 absorber layer inside the ring, and a second contact on a portion of the Band 2 absorber layer outside the ring. The Band 1 absorber layer and the Band 2 absorber layer are n-type, or the Band 1 absorber layer and the Band 2 absorber layer are p-type.

A structure is disclosed. The structure contains a second detector disposed above a first detector, wherein the first detector contains a first absorber layer, a first barrier layer disposed above the first absorber layer, a first contact layer disposed above the first barrier layer, and wherein the second detector contains a second contact layer disposed above the first contact layer, a second barrier layer disposed above the second contact layer, a second absorber layer disposed above the second barrier layer.

Back-to-back dual band p-CB-n

A device and method of manufacturing are disclosed. The device contains a buffer layer containing a first material, a detector structure disposed above the buffer layer, a readout integrated circuit coupled with the detector structure, a layer above the readout integrated circuit comprising a second material, and a silicon layer above the layer.

Device and method for reducing cracking of material due to thermal mismatch

The present disclosure relates to solution processed nanomaterials, and methods for their manufacture, with activity in the infrared (IR) region for a variety of commercial and defense applications, including conformal large-area IR coatings, devices and pigments that necessitate an absorption band edge in the MWIR or LWIR.

IR absorbing coatings comprising fluorinated nanoparticles

The invention describes a device which enables MWIR photodetectors to operate at zero bias and deliver low dark current performance. The performance is achieved by incorporating a p-n junction in the barrier. The device consists of a p-type contact layer, a p-n junction in the compound barrier (CB) with graded composition and/or doping profiles, and an n-type absorber (p-CB-n) device.

MWIR photodetector with compound barrier with P-N junction

A method for manufacturing a photodiode including the steps of providing a substrate, solution depositing a quantum nanomaterial layer onto the substrate, the quantum nanomaterial layer including a number of quantum nanomaterials having a ligand coating, and applying a thin-film oxide layer over the quantum nanomaterial layer.

Photodiode and method for making the same

A dual band detector includes a substrate, a composite barrier, a first absorber on the substrate and on a light incident side of the composite barrier, the first absorber for detecting first infrared light wavelengths, a second absorber on the composite barrier on a side opposite the light incident side, the second absorber for detecting second infrared light wavelengths, wherein a bandgap of the first absorber is larger than that of the second absorber, wherein the composite barrier includes a first secondary barrier, a primary barrier, and a second secondary barrier, wherein the first and second secondary barriers may have a lower bandgap energy than the primary barrier, wherein the first or the second secondary barrier may have a doping level and type different from that of the primary barrier, and wherein at least the primary barrier blocks majority carriers and allows minority carrier flow.

Dual band SWIR/MWIR and MWIR1/MWIR2 infrared detectors

A dual-band infrared detector structure based on Type-II superlattices (T2SL) has been developed and experimentally validated. The structure according to the principles of the present invention is designed for a single Indium bump architecture and utilizes a T2SL barrier design that omits the traditional p-n junction region. The barrier design comprises multiple periods where each period comprises multiple monolayers doped P type. By selecting the composition, number of monolayers per period and number of periods, a transition region is created in the conduction band between a first absorber layer and a second absorber layer that allows operation at low biases (&#x3c;100 mV for both bands) and exhibits a dark current density in the longer wavelength band comparable to that obtained with single-color detectors.

Growing community of inventors

Santa Monica, CA, United States of America

Brett Z Nosho