Robert Boschgmbh

Akustica, Inc.

Carnegie Mellon University

Brett Mathew Diamond

John William Zinn

Kaigham Jacob Gabriel

Matthew A Zeleznik

John Matthew Muza

Jochen Hoffmann

Jan E Vandemeer

Jochen Reinmuth

Franz Laermer

Michael James Daley

Andrew Jonathan Doller

Thomas Buck

Philip Sean Stetson

Arnim Hoechst

Bernhard Gehl

John M Muza

John J Neumann, Jr

Andy Doller

Phillip Sean Stetson

Systems and methods for preventing electrical leakage in a MEMS microphone. In one embodiment, the MEMS microphone includes a semiconductor substrate, an electrode, a first insulation layer, and a doped region. The first insulation layer is formed between the electrode and the semiconductor substrate. The doped region is implanted in at least a portion of the semiconductor substrate where the semiconductor substrate is in contact with the first insulation layer. The doped region is also electrically coupled to the electrode.

Doped substrate regions in MEMS microphones

Systems and methods are disclosed for manufacturing a CMOS-MEMS device. A partial protective layer is deposited on a top surface of a layered to cover a logic region. A first partial etch is performed from the bottom side of the layered structure to form a first gap below a MEMS membrane within a MEMS region of the layered structure. A second partial etch is performed from the top side of the layered structure to remove a portion of a sacrificial layer between the MEMS membrane and a MEMS backplate within the MEMS region. The second partial etch releases the MEMS membrane so that it can move in response to pressures. The deposited partial protective layer prevents the second partial etch from etching a portion of the sacrificial layer positioned within the logic region of the layered structure and also prevents the second partial etch from damaging the CMOS logic component.

Monolithic CMOS-MEMS microphones and method of manufacturing

Systems and methods are disclosed for manufacturing a CMOS-MEMS device (). A partial protective layer () is deposited on a top surface of a layered structure to cover a circuit region. A first partial etch is performed from the bottom side of the layered structure to form a first gap () below a MEMS membrane () within a MEMS region of the layered structure. A second partial etch is performed from the top side of the layered structure to remove a portion of a sacrificial layer between the MEMS membrane and a MEMS backplate () within the MEMS region. The second partial etch releases the MEMS membrane so that it can move in response to pressures. The deposited partial protective layer prevents the second partial etch from etching a portion of the sacrificial layer positioned within the circuit region of the layered structure and also prevents the second partial etch from damaging the CMOS circuit component ().

A micro electrical mechanical system (MEMS) device in one embodiment includes a substrate defining a back cavity, a membrane above the back cavity, a back plate above the membrane, and a first overtravel stop (OTS) positioned at least partially directly beneath the membrane and supported by the back plate.

MEMS membrane overtravel stop

In a method for manufacturing a micromechanical membrane structure, a doped area is created in the front side of a silicon substrate, the depth of which doped area corresponds to the intended membrane thickness, and the lateral extent of which doped area covers at least the intended membrane surface area. In addition, in a DRIE (deep reactive ion etching) process applied to the back side of the silicon substrate, a cavity is created beneath the doped area, which DRIE process is aborted before the cavity reaches the doped area. The cavity is then deepened in a KOH etching process in which the doped substrate area functions as an etch stop, so that the doped substrate area remains as a basic membrane over the cavity.

Method for creating a micromechanical membrane structure and MEMS component

A method of manufacturing a microphone using epitaxially grown silicon. A monolithic wafer structure is provided. A wafer surface of the structure includes poly-crystalline silicon in a first horizontal region and mono-crystalline silicon in a second horizontal region surrounding a perimeter of the first horizontal region. A hybrid silicon layer is epitaxially deposited on the wafer surface. Portions of the hybrid silicon layer that contact the poly-crystalline silicon use the poly-crystalline silicon as a seed material and portions that contact the mono-crystalline silicon use the mono-crystalline silicon as a seed material. As such, the hybrid silicon layer includes both mono-crystalline silicon and poly-crystalline silicon in the same layer of the same wafer structure. A CMOS/membrane layer is then deposited on top of the hybrid silicon layer.

Epitaxial silicon CMOS-MEMS microphones and method for manufacturing

Provided is a micro-electromechanical-system (MEMS) device including a substrate; at least one semiconductor layer provided on the substrate; a circuit region including at least one chip containing drive/sense circuitry, the circuit region provided on the at least one semiconductor layer; a support structure attached to the substrate; at least one elastic device attached to the support structure; a proof-mass suspended by the at least one elastic device and free to move in at least one of the x-, y-, and z-directions; at least one top electrode provided on the at least one elastic device; and at least one bottom electrode located beneath the at least one elastic device such that an initial capacitance is generated between the at least one top and bottom electrodes, wherein the drive/sense circuitry, proof-mass, supporting structure, and the at least one top and bottom electrodes are fabricated on the at least one semiconductor layer.

Proof-mass with supporting structure on integrated circuit-MEMS platform and method of fabricating the same

An integrated circuit device includes a semiconductor die, the semiconductor die including a semiconductor substrate, driving/control circuitry disposed along a peripheral region of the semiconductor die, a MEMS device disposed within a central region of the semiconductor die, and a barrier disposed between the driving/control circuitry and the MEMS device.

Monolithic MEMS and integrated circuit device having a barrier and method of fabricating the same

Proof-mass with supporting structure on integrated circuit-MEMS platform

Each of a plurality of speaklets (MEMS membranes) produces a stream of clicks (discrete pulses of acoustic energy) that are summed to generate the desired soundwave. The speaklets are selected to be energized based on the value of a digital signal. The greater the significance of the bit of the digital signal, the more speaklets that are energized in response to that bit. Thus, a time-varying sound level is generated by time-varying the number of speaklets emitting clicks. Louder sound is generated by increasing the number of speaklets emitting clicks. The present invention represents a substantial advance over the prior art in that sound is generated directly from a digital signal without the need to convert the digital signal first to an analog signal for driving a diaphragm.

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Pittsburgh, PA, United States of America

Brett Mathew Diamond