Micron Technology Incorporated

Brett M Debenham

Kurt D Beigel

Patrick J Mullarkey

Douglas John Cutter

Fan Ho

Kim M Pierce

Dien S Luong

Adrian E Ong

Todd A Merritt

Jeffrey P Wright

Michael Amiel Shore

Hua Zheng

The present invention relates to a system and method for testing one or more semiconductor devices (e.g., packaged chips). Test equipment performs at least tests of a first type on the semiconductor device and identifies failures in the semiconductor device, if any. A number of failures are determined. In the case where there are some failures, decision circuitry determines whether it is more efficient to repeat the tests or repair the semiconductor device, if it is repairable.

Intelligent binning for electrically repairable semiconductor chips

Method and apparatus are disclosed for checking the resistance of antifuse elements in an integrated circuit. A voltage based on the resistance of an antifuse element is compared to a voltage based on a known resistance, and an output signal is generated whose binary value indicates whether the resistance of the antifuse element is higher or lower than the known value of resistance. The method and apparatus are useful in verifying the programming of antifuse elements.

Method and apparatus for checking the resistance of programmable elements

The present invention relates to a system and method for testing one or more semiconductor devices (e.g., packaged chips). Test equipment performs at least tests of a first type on the semiconductor device and identifies failures in the semiconductor device, if any. A number of failures is determined. In the case where there are some failures, decision circuitry determines whether it is more efficient to repeat the tests or repair the semiconductor device, if it is repairable.

Intelligent binning for electrically repairable semiconductor chips and method

An integrated circuit memory device has a plurality of nonvolatile programmable elements which are used to store a pass/fail status bit at selected milestones in a test sequence. At selected points in the test process an element may be programmed to indicate that the device has passed the tests associated with the selected point in the process. Prior to performing further tests on the device, the element is read to verify that it passed previous tests in the test process. If the appropriate elements are not programmed, the device is rejected. A rejected device may be retested according to the previous test steps. Laser fuses, electrically programmable fuses or antifuses are used to store test results. The use of electrically writeable nonvolatile memory elements allows for programming of the elements after the device has been packaged.

Method and apparatus for storage of test results within an integrated circuit

The present invention relates to a system and method for testing one or more semiconductor devices (e.g., packaged chips). Test equipment performs at least tests of a first type on the semiconductor device and identifies failures in the semiconductor device, if any. A number of failures is determined. In the case where there are some failures, decision circuitry determines whether it is more efficient to repeat the tests or repair the semiconductor device, if it is repairable. The semiconductor device may be binned differently depending on the number of identified failures. The decision circuitry may designate the semiconductor device for an additional procedure, if the number of the identified failures is within a first number set. The decision circuitry may designate the semiconductor device for repair, if the number of the identified failures is within a second number set. The decision circuitry designate the semiconductor device for additional tests of the first type, if the number of the identified failures is within a third number set. The tests of a first type may be a hot sort procedure and the additional tests may be a cold final procedure.

Method and apparatus are disclosed for reducing antifuse programming time by connecting the programming voltage to the electrode of the antifuse element that has roughened polysilicon.

Method and apparatus for reducing antifuse programming time

The present invention relates to a system and method for testing one or more semiconductor devices (e.g. packaged chips). Test equipment performs at least tests of a first type on the semiconductor device and identifies failures in the semiconductor device, if any. A number of failures is determined. In the case where there are some failures, decision circuitry determines whether it is more efficient to repeat the tests or repair the semiconductor device, if it is repairable. The semiconductor device may be binned differently depending on the number of identified failures. The decision circuitry may designate the semiconductor device for an additional procedure, if the number of the identified failures is within a first number set. The decision circuitry may designate the semiconductor device for repair, if the number of the identified failures is within a second number set. The decision circuitry designate the semiconductor device for additional tests of the first type, if the number of the identified failures is within a third number set. The tests of a first type may be a hot sort procedure and the additional tests may be a cold final procedure.

Method and apparatus are disclosed for checking the resistance of programmable circuits in an integrated circuit where each programmable circuit includes a programmable element, such as an antifuse. A precharged node is connected to the programmable element and the voltage at the node discharges based on the resistance of the programmable element. An output signal is produced whose binary value is based on the voltage at the node after a sufficient time has elapsed to allow the initial voltage to discharge based on the resistance of the programmable element.

An antifuse bank includes a bank of self-decoupling anti fuse circuits. The anti fuse circuits are programmed according to a pattern of address bits by blowing antifuses corresponding to bits of the address. The antifuses are blown by applying a high voltage across the antifuse. As each antifuse is blown, its resistance drops and current through the antifuse increases. The self-decoupling circuit detects the increased current flow and, when the anti fuse resistance is sufficiently low, limits current flow through the anti fuse. The antifuse thus does not load the high voltage source as other antifuses are blown.

Self current limiting antifuse circuit

An antifuse bank includes a bank of self-decoupling antifuse circuits. The antifuse circuits are programmed according to a pattern of address bits by blowing antifuses corresponding to bits of the address. The antifuses are blown by applying a high voltage across the antifuse. As each antifuse is blown, its resistance drops and current through the antifuse increases. The self-decoupling circuit detects the increased current flow and, when the antifuse resistance is sufficiently low, limits current flow through the antifuse. The antifuse thus does not load the high voltage source as other antifuses are blown.

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Meridian, ID, United States of America

Brett M Debenham