Micron Technology Incorporated

Brett L Williams

Todd A Merritt

Scott E Schaefer

Troy A Manning

Kevin J Ryan

Paul S Zagar

Donald D Baldwin

Jeffrey S Mailloux

Eugene H Cloud

Thomas H Kinsley

Adrian E Ong

Todd D Farrell

A memory system includes a memory controller and a memory module coupled to the memory controller. One such memory module may include a memory package of a first type and a signal presence detect unit configured to provide configuration data associated with a memory package of a second type to the memory controller. The configuration data may be used to configure the memory controller to interface with the memory package of a first type.

Memories and methods to provide configuration information to controllers

An integrated circuit memory device is designed for high speed data access and for compatibility with existing memory systems. An address strobe signal is used to latch a first address. During a burst access cycle the address is incremented internal to the device with additional address strobe transitions. A new memory address is only required at the beginning of each burst access. Read/Write commands are issued once per burst access eliminating the need to toggle the Read/Write control line at the device cycle frequency. Transitions of the Read/Write control line during a burst access will terminate the burst access, reset the burst length counter and initialize the device for another burst access. The device is compatible with existing Extended Data Out DRAM device pinouts, Fast Page Mode and Extended Data Out Single In-Line Memory Module pinouts, and other memory circuit designs. Additionally, a DRAM is provided having both pipelined and burst Extended Data Out modes of operation and the ability to switch between them.

Asynchronously-accessible memory device with mode selection circuitry for burst or pipelined operation

Memory device for burst or pipelined operation with mode selection circuitry

An integrated circuit memory device is designed for high speed data access and for compatibility with existing memory systems. An address strobe signal is used to latch a first address. During a burst access cycle the address is incremented internal to the device with additional address strobe transitions. A new memory address is only required at the beginning of each burst access. Read/Write commands are issued once per burst access eliminating the need to toggle the Read/Write control line at the device cycle frequency. Transitions of the Read/Write control line during a burst access will terminate the burst access, reset the burst length counter and initialize the device for another burst access. The device is compatible with existing Extended Data Out DRAM device pinouts, Fast Page Mode and Extended Data Out Single In-Line Memory Module pinouts, and other memory circuit designs. Additionally, a DRAM is provided having both pipelined and burst Extended Data Out modes of operation and the ability to switch between them. Additionally, a memory device switchable between a patterned and a patternless addressing scheme is provided.

Burst/pipelined edo memory device

Method for switching between modes of operation

A memory bus impedance matching module is inserted in each empty memory expansion socket on a computer memory bus to provide a constant impedance on the bus. Impedance devices, such as non-functional memory devices, are mounted on the module housing and coupled to standard bus communication line connections on the module housing. The modules are placed on the memory bus to prevent communication errors without needing to fill each expansion socket with real memory.

Impedance matching device for high speed memory bus

A memory structure includes a memory module divided into low order banks and high order banks. The low order banks are used as conventional memory. The high order banks are used as either conventional memory or ECC memory, depending upon routing of data. In one embodiment, data from the high order banks are routed through a primary multiplexer to a data bus when the high order banks are used as conventional memory. When the high order banks are used as ECC memory, data from the auxiliary section is routed through the primary multiplexer to an error correction circuit. A secondary multiplexer combines ECC bits from the auxiliary section of the module or a dedicated ECC memory on a motherboard. The auxiliary section thus supplements the onboard ECC memory to provide support for an effectively larger ECC memory for use with error intolerant applications that require error correction.

Reconfigurable memory with selectable error correction storage

A method for programming a synchronous dynamic random access memory (SDRAM) device including a memory array is disclosed. In the method, the SDRAM device is initially programmed to have a first control operating option in response to a first command. Reprogramming of the SDRAM device includes a second control operating option in response to a second command. The array remains simultaneously active in response to an active internal row address signal while the control operation feature is programmed to have the second control operating option.

Method for initializing and reprogramming a control operation feature of a memory device

An application-specific integrated circuit (ASIC) for enabling access to memory. ASIC includes a decryptor, a valid authorization storage component, an upgrade verifier, an upgrade storage component, and an enabling component. The decryptor inputs an encrypted authorization code and outputs a decrypted authorization code. The valid authorization storage component stores and outputs a valid authorization code. The upgrade verifier inputs the decrypted authorization code and the valid authorization code, compares the decrypted authorization code to the valid authorization code to determine whether access to the portion of memory is authorized, and outputs a signal to enable access to the portion of memory. The upgrade storage component stores the signal output from the upgrade verifier. The enabling component inputs a memory access signal and a signal stored in the upgrade storage component and outputs a signal indicating whether the portion of memory is enabled.

Method and apparatus for enabling access to computer system resources

A memory circuit is described which includes memory cells for storing data. The memory circuit can be read from or written to by an external system such as a microprocessor or core logic chip set. The microprocessor provides memory cell address data to the memory circuit and can request that data be output on communication lines for reading therefrom. The memory circuit reduces the time needed to read data stored in the memory by providing a valid output data signal. The valid output data signal indicates that data coupled to the communication lines has stabilized and is therefore valid. Different valid output data signals and trigger circuits for producing the signals are described.

Data communication for memory

A method for initially programming a synchronous dynamic random access memory (SDRAM) device to have a first control operating option in response to a first command and for reprogramming the SDRAM device to have a second control operating option in response to a second command.

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Eagle, ID, United States of America

Brett L Williams