Infineon Technologies Americas Corp.

International Rectifier Corporation

Brett Hughes

Scott Alan Nelson

Ronald H Birkhahn

Steve Hoff

Ronald Birkhahn

Robert Brown

Leanne Sass

Anilkumar Chandolu

Troy Larsen

According to one exemplary embodiment, a group III-V semiconductor device includes at least one transition layer situated over a substrate. The group III-V semiconductor device further includes a first strain-relieving interlayer situated over the at least one transition layer and a second strain-relieving interlayer situated over the first strain-relieving interlayer. The group III-V semiconductor device further includes a first group III-V semiconductor body situated over the second strain-relieving interlayer. The first and second strain-relieving interlayers comprise different semiconductor materials so as to reduce a strain in the first group III-V semiconductor body. The second strain-relieving interlayer can be substantially thinner than the first strain-relieving interlayer.

Group III-V semiconductor device with strain-relieving layers

Group III-V device with strain-relieving layers

Group III-V semiconductor device with strain-relieving interlayers

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Hugo, MN, United States of America

Brett Hughes