International Business Machines Corporation

Hitachi Global Storage Technologies Netherlands B.v.

Brent Ray Den Hartog

Raymond Alan Richetta

Matthew James Paschal

Eric John Lukes

Timothy Joseph Schmerbeck

Nghia Van Phan

Patrick Lee Rosno

Dereje G Yilma

James Aloysius Hagan

John C Shen

Dennis Leonard Fox

Kannimangalam Venkatasubramanyam Viswanathan

A circuit component comprises a row of transistors. The row may contain a first active FET with a source region and a drain region. The row may also contain a first active dummy FET that shares the source region and that also has a diffusion region. The row may also contain a second active FET and a second active dummy FET, positioned such that the active dummy FETs are located between the active FETs on the row. The row may also have an end positioned such that the first active dummy FET is between the end and the first active FET. A supply of current may be electrically connected to the source diffusion regions. A load region may be electrically connected to the drain region. The first active FET and the first active dummy FET may have gates that share a voltage source or that have their own voltage source.

Field effect transistor structure for reducing contact resistance

Certain aspects of the present disclosure are directed to a circuit for driving a signal at an output node. The circuit generally includes a voltage divider network having a first terminal coupled to the output node. The circuit also includes a first transistor having a gate coupled to a second terminal of the voltage divider network and a plurality of transistors. A gate of each of the plurality of transistors may be coupled to a respective tap node of the voltage divider network, and the plurality of transistors may include a third transistor having a source coupled to a drain of the first transistor. The circuit may also include a second transistor coupled to the first transistor and having a gate coupled to an input node of the circuit.

Bidirectional interface using thin oxide devices

The present invention utilizes a combination of chemical and mechanical finishing processes to polish a disk substrate surface to near atomic smoothness. Broadly speaking, the surface of a disk substrate that has been machined (i.e., rough ground) to a predetermined surface roughness is subjected to attack by a chemical formulation (called an attacking agent). The chemical formulation is used to soften the substrate material. Then, the softened material is &ldquo;wiped away&rdquo; via mechanical action.

Substrate independent superpolishing process and slurry

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Rochester, MN, United States of America

Brent Ray Den Hartog