Watlow Electric Manufacturing Company

Brent Elliot

Michael Parker

Jason Stephens

Guleid Hussen

Alfred Grant Elliot

Dennis George Rex

A joining method includes placing a brazing element between an interface area of a first ceramic piece and an interface area of a second ceramic piece to create a joining pre-assembly and placing the components of said joining pre-assembly into a process chamber. Oxygen is removed from said process chamber and at least said brazing element of said joining pre-assembly is heated, thereby hermetically joining said first ceramic piece to said second ceramic piece. Said brazing element consists of Cobalt and Carbon.

Nickel-carbon and nickel-cobalt-carbon brazes and brazing processes for joining ceramics and metals and semiconductor processing and industrial equipment using same

A method for the joining of ceramic pieces includes applying a layer of titanium on a first ceramic piece and applying a layer of titanium on a second ceramic piece; applying a layer of nickel on each of the layers of titanium on the first ceramic piece and the second ceramic piece; applying a layer of nickel phosphorous to each of the layers of nickel on the first ceramic piece and the second ceramic piece; assembling the first ceramic piece and the second ceramic piece with the layers of titanium, nickel, and nickel phosphorous therebetween; pressing the layer of nickel phosphorous of the first ceramic piece against the layer of nickel phosphorous of the second ceramic piece; heating the first ceramic piece and the second ceramic piece to a joining temperature in a vacuum; and cooling the first ceramic piece and the second ceramic piece. A hermetic seal is formed between the first ceramic piece and the second ceramic piece.

Semiconductor processing equipment with high temperature resistant nickel alloy joints and methods for making same

A method for joining quartz pieces using metallic aluminum as the joining element. The aluminum may be placed between two quartz pieces and the assembly may be heated in the range of 500 C to 650 C. The joining atmosphere may be non-oxygenated. A method for the joining of quartz pieces which may include barrier layers on the quartz pieces. The barrier layers may be impervious to aluminum diffusion and may be of a metal oxide or metal nitride. The quartz pieces with the barrier layers may then be joined at temperatures higher than 650 C and less than 1200 C. A device such as an RF antenna or electrode in support of semiconductor processing using joined quartz pieces wherein the aluminum joining layer which has joined the pieces and also functions as antenna electrode.

Method for joining quartz pieces and quartz electrodes and other devices of joined quartz

An electrical termination unit or feedthrough which may be used for routing electrical conductors through a chamber wall, or otherwise across a barrier between isolated atmospheric conditions. The electrical termination unit may have aluminum as the interface material to the chamber interface and may utilize a ceramic insulator. The electrical termination unit may have the aluminum used as the interface brazed directly to a ceramic surface of the insulator. The aluminum that forms the chamber interface may be formed within a hollow ceramic tube in the same process step that brazes the aluminum to the ceramic tube with a hermetic joint. Machining subsequent to the brazing of the aluminum to the ceramic insulator may allow for achievement of the final form desired. A method for manufacturing such an electrical termination unit.

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Cupertino, CA, United States of America

Brent Elliot