US Government as Represented by the Secretary of the Army

Brendan M Hanrahan

Ronald G Polcawich

Nathan Scott Lazarus

Sarah Salah Bedair

Darin J Sharar

Christopher Michael Waits

Luz M Sanchez

Gabriel I Smith

Novel dielectric capacitor devices include an electrically conductive porous scaffold forming a first conductor, a conformal thin dielectric uniformly coating the pores, and a metal or alloy which fills the conformal dielectric coated pores of the scaffold forming a second conductor. This structure's design provides high surface area for high energy storage and capacitance density as well as high thermal conductivity. The metal or alloy can be a liquid metal and flowed within the device to change the electrical or mechanical properties of the device.

Dielectric capacitor formed of a dielectric-coated electrically conductive porous scaffold filled with metal

A method of cooling includes providing an elastocaloric material; continuously applying a force on the elastocaloric material to cause a continuous mechanical deformation of the elastocaloric material for a predetermined period of time, such that the continuous mechanical deformation creates a solid-to-solid phase transformation in the elastocaloric material; emitting exothermic latent heat from the elastocaloric material to increase a temperature of the elastocaloric material; removing the force from the elastocaloric material upon expiration of the predetermined period of time; and absorbing endothermic latent heat into the elastocaloric material to decrease the temperature of the elastocaloric material and/or an environment adjacent to the elastocaloric material or an electronic/phononic device, etc.

Continuous bending-mode elastocaloric cooling/heating flow loop

A physical structure and a method for forming a electronic devices on a substrate comprising: providing a substrate; forming a plurality of layers on the substrate, the layers comprising at least two layers of conducting material and a layer of insulating material therebetween; depositing photoresist material onto predetermined regions of the plurality of layers, the photoresist material varying in thickness; utilizing gray scale illumination on the photoresist material; removing a portion of the layers using physical etching to expose predetermined portions of the conducting layers. Optionally, the photoresist may be utilized on a plurality of discrete electronic devices concurrently, such that the gray scale illumination is conducted on a plurality of discrete electronic devices concurrently. Similarly, the physical etching may be conducted on the discrete electronic devices concurrently; removing different thicknesses of material concurrently. Also claimed is a product made by the claimed method.

Electronic device structure and method of making electronic devices and integrated circuits using grayscale technology and multilayer thin-film composites

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Silver Spring, MD, United States of America

Brendan M Hanrahan