Seagate Technology Incorporated

Brendan Lafferty

Marcus Benedict Mooney

Paula Frances McElhinney

Mark Anthony Gubbins

Aidan Dominic Goggin

Fadi El Hallak

Richard C A Pitwon

Reyad Mehfuz

Kelly Elizabeth Callan

Debra Ann McNeill

Peter K McGeehin

Ge Yi

Andrew B McInroy

A first set of components (e.g., recording head components) is formed on a first wafer at a first pattern density. A second set of components is formed on a second wafer at a second pattern density that is less than half that of the first pattern density. The first and second sets of components are joined to form respective subassemblies (e.g., recording head subassemblies).

Joining components from wafers having different pattern densities

Exemplary methods and apparatus may provide optical gates and optical switches using such optical gates. Each optical gate may include a semiconductor optical amplifier that is placed in a substrate. The semiconductor optical amplifier may be coupled to input and output couplers to receive and selectively output optical signals into and out of the substrate.

Optical switches

A method, and apparatus provided thereby, includes providing a substrate and placing an integrated laser on the substrate. A first cladding layer surrounds the integrated laser and includes a laser optical coupler aligned with an output of the laser. The laser optical coupler includes silicon and the laser includes a III-V compound semiconductor. The output of the laser is spaced apart from the laser optical coupler by a gap of less than or equal to 500 nanometers. An optical waveguide is positioned on the first cladding layer and in optical communication with the laser optical coupler.

Integrated laser transceiver

A modification rate at a surface of an anode formed on a substrate is controlled. The anode is connected to a cathode comprised of a material having a higher nobility than the anode. An electrically conductive path is established between the anode and the cathode through an electrolyte to induce formation of an oxide layer at the anode surface that is more resistive to modification than the anode.

Write element modification control using a galvanic couple

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Muff, Ireland

Brendan Lafferty