Kopin Corporation

Other

Brenda D Dingle

Paul M Zavracky

Duy-Phach Vu

Ngwe K Cheong

Jeffrey Jay Jacobsen

Mark B Spitzer

Robert W McClelland

John C Fan

Jason E Dingle

Matthew M Zavracky

Jack P Salerno

John C C Fan

Shambhu Shastry

Duy-Pach Vu

Duv-Pach Vu

The invention relates to the formation of arrays of thin film transistors (TFT's) on silicon substrates and the dicing and tiling of such substrates for transfer to a common module body. TFT's activate display electrodes formed adjacent the transistors after the tiles have been transferred.

Method of forming an active matrix display

The invention relates to device processing, packaging and interconnects that will yield integrated electronic circuitry of higher density and complexity than can be obtained by using conventional multi-chip modules. Processes include the formation of complex multi-function circuitry on common module substrates using circuit tiles of silicon thin-films which are transferred, interconnected and packaged. Circuit modules using integrated transfer/interconnect processes compatible with extremely high density and complexity provide large-area active-matrix displays with on-board drivers and logic in a complete glass-based modules. Other applications are contemplated, such as, displays, microprocessor and memory devices, and communication circuits with optical input and output.

High density electronic circuit modules

A multi-layered structure is fabricated in which a microprocessor is configured in different layers and interconnected vertically through insulating layers which separate each circuit layer of the structure. Each circuit layer can be fabricated in a separate wafer or thin film material and then transferred onto the layered structure and interconnected.

Three dimensional processor using transferred thin film circuits

The present invention relates to methods of fabricating pixel electrodes ( ) for active matrix displays including the formation of arrays of transistor circuits in thin film silicon ( ) on an insulating substrate and transfer of this active matrix circuit onto an optically transmissive substrate ( ). An array of color filter elements can be formed prior to transfer of the active matrix circuit that are aligned between a light source for the display and the array of pixel electrodes to provide a color display.

Methods of fabricating active matrix pixel electrodes

Method for manufacturing active matrix liquid crystal displays

Bonded layer semiconductor device

High Density electronic circuit modules

A display panel is formed using essentially single crystal thin-film material that is transferred to substrates for display fabrication. The transfer includes the step of transferring the semiconductor regions onto a stretchable substrate. The resulting circuit panel can be incorporated into a display panel with a light emitting or liquid crystal material to provide the desired display.

Method of transferring semiconductors

Light emitting diodes (LEDs) and LED bars and LED arrays formed of semiconductive material, such as III-V, and particularly AlGaAs/CaAs material, are formed in very thin structures using organometallic vapor deposition (OMCVD). Semiconductor p-n junctions are formed as deposited using carbon as the p-type impurity dopant. Various lift-off methods are described which permit back side processing when the growth substrate is removed and also enable device registration for LED bars and arrays to be maintained.

Method of making light emitting diode displays

A display panel is formed using a single crystal thin-film transistors that are transferred to substrates for display fabrication. Pixel arrays form light valves or switches that can be fabricated with control electronics in the thin-film material prior to transfer. The resulting circuit panel is then incorporated into a projection display system with a light emitting or liquid crystal material to provide the desired light valve.

Single crystal silicon arrayed devices with optical shield between transistor and substrate

Integrated circuits for use in electronic devices requiring high density packaging are fabricated to provide highly flexible and ultra-thin devices having a variety of applications. The flexible circuits have dimensions up to several centimeters in surface area and thicknesses of a few microns. These circuits are fabricated using transfer techniques which include the removal of VLSI circuits from silicon wafers and mounting of the circuits on application specific substrates.

Growing community of inventors

Mansfield, MA, United States of America

Brenda D Dingle