Varian Semiconductor Equipment Associates, Inc.

Applied Materials, Inc.

Brant S Binns

Bon-Woong Koo

Richard M White

Eric R Cobb

Scott C Holden

Kenneth L Starks

Peter F Kurunczi

Alexandre Likhanskii

Eric D Hermanson

Jay Thomas Scheuer

Kevin M Daniels

Steven M Anella

D Jeffrey Lischer

Kevin R Anglin

George Gammel

Jordan B Tye

William T Levay

Michael Blanchard

Robert A Poltras

A cassette with embedded temperature sensors that is disposed within a load lock is disclosed. The temperature sensors may be disposed in a plurality of shelves of the load lock cassette to monitor the temperature of each of a plurality of workpieces disposed in the load lock. The output of these temperature sensors may be provided to a controller, which controls when the load lock is opened. The load lock cassette may also include cooling channels to accelerate the cooling of the workpieces to improve throughput. The cooling may be controlled using closed loop control, where a controller monitors the temperature of the workpieces during the cooling operation.

Load lock with integrated features

Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component, such as an energy purity module, having a plurality of conductive beam optics contained therein. The system further includes a power supply system for supplying a voltage and a current to the beam-line component during a cleaning mode, wherein the power supply system may include a first power plug coupled to a first subset of the plurality of conductive beam optics and a second power plug coupled to a second subset of the plurality of conductive beam optics. During a cleaning mode, the voltage and current may be simultaneously supplied and split between each of the first and second power plugs.

RF clean system for electrostatic elements

An ion source with improved temperature control is disclosed. A portion of the ion source is nestled within a recessed cavity in a heat sink, where the portion of the ion source and the recessed cavity are each shaped so that expansion of the ion source causes high pressure thermal contact with the heat sink. For example, the ion source may have a tapered cylindrical end, which fits within a recessed cavity in the heat sink. Thermal expansion of the ion source causes the tapered cylindrical end to press against the recessed cavity in the heat sink. By proper selection of the temperature of the heat sink, the temperature and flow of coolant fluid through the heat sink, and the size of the gap between the heat sink and the ion source, the temperature of the ion source can be controlled.

Temperature controlled ion source

Methods of reducing glitch rates within an ion implanter are described. In one embodiment, a plasma-assisted conditioning is performed, wherein the bias voltage to the extraction electrodes is modified so as to inhibit the formation of an ion beam. The power supplied to the plasma generator in the ion source is increased, thereby creating a high density plasma, which is not extracted by the extraction electrodes. This plasma extends from the ion source chamber through the extraction aperture. Energetic ions then condition the extraction electrodes. In another embodiment, a plasma-assisted cleaning is performed. In this mode, the extraction electrodes are moved further from the ion source chamber, and a different source gas is used to create the plasma. In some embodiments, a combination of these modes is used to reduce glitches in the ion implanter.

Reducing glitching in an ion implanter

A wafer handling robot, ion implanter system including a wafer handling robot and a related method are disclosed. An ion implanter system may include an ion implanting station including a load lock coupled thereto; a wafer handling robot located at least partially within the load lock, the wafer handling robot including an end effecter for handling at least one wafer, and a motor for moving the end effecter vertically; and a sensor positioned within the load lock to determine a vertical position of the end effecter.

Wafer holding robot end effecter vertical position determination in ion implanter system

Growing community of inventors

Beverly, MA, United States of America

Brant S Binns