Cree Fayetteville, Inc.

Wolfspeed, Inc.

Cree Gmbh

Rohm Co., Ltd.

Sandia Corporation

National Technology & Engineering Solutions of Sandia, LLC

Brandon Passmore

Brice McPherson

Zachary Cole

Alexander B Lostetter

Roberto M Schupbach

Ty McNutt

Robert Shaw

Jennifer Stabach-Smith

Xiaoyu Miao

Igal Brener

Eric A Shaner

Jennifer Stabach

Zach Cole

Jared Hornberger

Alex Lostetter

Sayan Seal

Adam Barkley

Peter Killeen

Tony M Berry

Takukazu Otsuka

Bryon Western

Young Chul Jun

Bret Whitaker

Benjamin A Samples

Tony Berry

Power module

The present disclosure describes a power module having a substrate, first and second pluralities of vertical power devices, and first and second terminal assemblies. The substrate has a top surface with a first trace and a second trace. The first plurality of vertical power devices and the second plurality of vertical power devices are electrically coupled to form part of a power circuit. The first plurality of vertical power devices is electrically and mechanically directly coupled between the first trace and a bottom of a first elongated bar of the first terminal assembly. The second plurality of vertical power devices are electrically and mechanically directly coupled between the second trace and a bottom of a second elongated bar of the second terminal assembly.

Power semiconductor devices, and more particularly arrangements of power semiconductor devices for improved thermal performance in high power applications are disclosed. Arrangements for multiple power semiconductor devices within a package and/or module are provided that more efficiently utilize the active device area of each power semiconductor device for a given operational specification. Certain arrangements are provided that reduce the effects of thermal crowding in order to provide increased power capability or a similar power capability in a reduced device size. Improved thermal balancing may be provided by variable spacing and/or variable offset distances between next-adjacent power semiconductor devices. In this manner, active areas of power devices and/or modules may include an increased density of power semiconductor devices within a given area while also exhibiting improved thermal profiles during operation, thereby providing improved operating characteristics and/or increased operating lifetimes.

Arrangements of power semiconductor devices for improved thermal performance

A power module includes a number of sub-modules connected via removable jumpers. The removable jumpers allow the connections between one or more power semiconductor die in the sub-modules to be reconfigured, such that when the removable jumpers are provided, the power module has a first function, and when the removable jumpers are removed, the power module has a second function. The removable jumpers may also allow for independent testing of the sub-modules. The power module may also include a multi-layer printed circuit board (PCB), which is used to connect one or more contacts of the power semiconductor die. The multi-layer PCB reduces stray inductance between the contacts and therefore improves the performance of the power module.

High voltage power module

A power module includes a case, a first terminal, a second terminal, and a number of silicon carbide semiconductor die. The case has a footprint less than 30 cm. The silicon carbide semiconductor die are inside the case and coupled between the first terminal and the second terminal. The power module and the silicon carbide semiconductor die are configured such that in a first operating state the silicon carbide semiconductor die are capable of continuously blocking voltages greater than 650V between the first terminal and the second terminal, and in a second operating state the silicon carbide semiconductor die are capable of continuously passing currents greater than 200 A between the first terminal and the second terminal.

Silicon carbide power module

A method of making a power module includes providing a base plate defining a topology pattern, providing a power substrate above the base plate, providing at least two power contacts and arranging solder catches in the at least two power contacts, soldering the at least two power contacts to the power substrate utilizing the solder catches, and securing a housing to the power substrate.

Low profile, highly configurable, current sharing paralleled wide band gap power device power module

A power die module using a compression connection to a power die in a small package with corona extenders positioned around short efficient path exterior electrical connections. The module is built from a baseplate with connected sidewalls forming an interior compartment holding a power substrate with attached threaded inserts. A printed circuit board bolted to the power substrate with high voltage power die compressively held between the board and the substrate. The compressive hold enhances the electrical connections between the contacts on the top and bottom of the power die and either the power substrate or the printed circuit board. Exterior blade connectors extend upward from the printed circuit board through blade apertures in a lid that covers the interior compartment. The lid includes corona extenders positioned around the blade apertures to allow for high voltage applications while maintaining a small size lightweight package. The sidewall has a perimeter that also includes one or more corona extenders.

High voltage power chip module

A power module includes a number of sub-modules connected via removable jumpers. The removable jumpers allow the connections between one or more power semiconductor die in the sub-modules to be reconfigured, such that when the removable jumpers are provided, the power module has a first function and when the removable jumpers are removed, the power module has a second function. The removable jumpers may also allow for independent testing of the sub-modules. The power module may also include a multi-layer printed circuit board (PCB), which is used to connect one or more contacts of the power semiconductor die. The multi-layer PCB reduces stray inductance between the contacts and therefore improves the performance of the power module.

Provided is a double-sided cooling structure for a semiconductor device using a low processing temperature and reduced processing time utilizing solid phase diffusion bonding. The fabrication method for this system is provided. The semiconductor devicecomprising: a mounting substrate; a semiconductor chipdisposed on the mounting substrateand a semiconductor substrate, a source pad electrode SP and a gate pad electrode GP disposed on a surface of the semiconductor substrate, and a drain pad electrodedisposed on a back side surface of the semiconductor substrateto be contacted with the mounting substrate; and a source connector SC disposed on the source pad electrode SP. The mounting substrateand the drain pad electrodeare bonded by using solid phase diffusion bonding.

Semiconductor device and fabrication method for the same

A mid-infrared tunable metamaterial comprises an array of resonators on a semiconductor substrate having a large dependence of dielectric function on carrier concentration and a semiconductor plasma resonance that lies below the operating range, such as indium antimonide. Voltage biasing of the substrate generates a resonance shift in the metamaterial response that is tunable over a broad operating range. The mid-infrared tunable metamaterials have the potential to become the building blocks of chip based active optical devices in mid-infrared ranges, which can be used for many applications, such as thermal imaging, remote sensing, and environmental monitoring.

Mid-infrared tunable metamaterials

Growing community of inventors

Fayetteville, AR, United States of America

Brandon Passmore