Applied Materials, Inc.

Quantumscape Corporation

Other

Thinsilicon Corporation

Bradley Owen Stimson

John C Forster

Praburam Gopalraja

Weston Arthur Hermann

Anantha K Subramani

Rainer Johannes Fasching

Timothy P Holme

Joseph Han

Cheng Chieh Chao

Zheng Xu

Karl M Brown

Akihiro Hosokawa

Makoto Inagawa

Kenny King-tai Ngan

Jagdeep Singh

John M White

Liubo Hong

Murali K Narasimhan

Ivo J Raaijmakers

Barney M Cohen

Hienminh Huu Le

Mitsuhiro Kaburaki

Eric Delaurentis

Patricia Rodriguez

Wei W Wang

Jianming Fu

Avi Tepman

Tim Holme

Michael N Sugarman

David Eric Berkstresser

Jrjyan Jerry Chen

Howard E Grunes

Gilbert Hausmann

Sergio Edelstein

Michael Rosenstein

Arnold Allenic

Nitin Khurana

Peter Satitpunwaycha

Jason Stephens

Hien Minh Huu Le

David H Loo

Debabrata Ghosh

Kenneth D Smyth

Raymond Gristi

Ayad A Al-Shaikh

Marc O'Donnell Schweitzer

Jr-Jyan Chen

Paul W Rummel

Lawrance A Ringor

Chia-Au Bill Lu

Mohamed A Al-Sharif

Guleid Nur Abdi Hussen

George Proulx

In an example, the present invention provides a method for forming a film of material for a solid state battery or other energy storage device. The method includes providing a first precursor species, and providing a second precursor species. The method also includes transferring the first precursor species through a first nozzle and outputting the first precursor species in a first molecular form and transferring the second precursor species through a second nozzle and outputting the second precursor species in a second molecular form. The method includes causing formation of first plurality of particles, ranging from about first diameter to about a second diameter, by intermixing the first precursor species with the second precursor species. The method also includes cooling the first plurality of particles at a rate of greater than 100&#xb0; C./s to a specified temperature.

Flash evaporation of solid state battery component

Provided herein are energy storage device cathodes with high capacity electrochemically active material including compounds that include iron, fluorine, sulfur, and optionally oxygen. Batteries with active materials including a compound of the formula FeFSOexhibit high capacity, high specific energy, high average discharge voltage, and low hysteresis, even when discharged at high rates. Iron, fluorine, and sulfur-containing compounds may be ionically and electronically conductive.

Iron, fluorine, sulfur compounds for battery cell cathodes

The disclosure is related to battery systems. More specifically, embodiments of the disclosure provide a nanostructured conversion material for use as the active material in battery cathodes. In an implementation, a nanostructured conversion material is a glassy material and includes a metal material, one or more oxidizing species, and a reducing cation species mixed at a scale of less than 1 nm. The glassy conversion material is substantially homogeneous within a volume of 1000 nm.

Nanostructured materials for electrochemical conversion reactions

The present invention generally comprises a top shield for shielding a shadow frame within a PVD chamber. The top shield may remain in a stationary position and at least partially shield the shadow frame to reduce the amount of material that may deposit on the shadow frame during processing. The top shield may be cooled to reduce the amount of fluxuation in temperature of the top shield and shadow frame during processing and/or during down time.

Cooled PVD shield

A magnetron assembly including one or more magnetrons each forming a closed plasma loop on the sputtering face of the target. The target may include multiple strip targets on which respective strip magnetrons roll and are partially supported on a common support plate through a spring mechanism. The strip magnetron may be a two-level folded magnetron in which each magnetron forms a folded plasma loop extending between lateral sides of the strip target and its ends meet in the middle of the target. The magnets forming the magnetron may be arranged in a pattern having generally uniform straight portions joined by curved portion in which extra magnet positions are available near the corners to steer the plasma track. Multiple magnetrons, possibly flexible, may be resiliently supported on a scanned support plate and individually partially supported by rollers on the back of one or more targets.

Ganged scanning of multiple magnetrons, especially two level folded magnetrons

A system for recycling includes a processing chamber, a reclamation reservoir and a mixing reservoir. The processing chamber is configured to receive a deposition gas deposited onto a semiconductor layer. The processing chamber has an exhaust to discharge an unused portion of the deposition gas as an effluent gas. The reclamation reservoir is in fluid communication with the processing chamber. The reclamation reservoir is configured to receive and store the effluent gas from the processing chamber. The mixing reservoir is in fluid communication with the reclamation reservoir and the processing chamber. The mixing reservoir is configured to mix the effluent gas with a virgin gas to form a recycled deposition gas. The mixing reservoir supplies the recycled deposition gas to the processing chamber to deposit an additional portion of the semiconductor layer.

System and method for recycling a gas used to deposit a semiconductor layer

RF power is coupled with different phase offsets to different RF connection points on an electrode of a plasma chamber. Preferably, the number of different RF connection points and corresponding phase offsets is at least four, and the positions of the RF connection points are distributed along two orthogonal dimensions of the electrode. Preferably, power to each respective RF connection point is supplied by a respective RF power supply, wherein each power supply synchronizes its phase to a common reference RF oscillator.

Multiple phase RF power for electrode of plasma chamber

Embodiments for methods and apparatuses for solar heating are disclosed. One solar heating apparatus includes an insulating layer adjacent to an exterior of a structure. A heat transfer plate is adjacent to the insulating layer. A fluid conduit is adjacent to the heat transfer plate. The heat transfer plate is thermally connected to the fluid conduit for transferring heat from the heat transfer plate to fluid within the fluid conduit. A weather exposed layer is thermally connected to the heat transfer plate.

Solar heating method and apparatus

A physical vapor deposition target assembly is configured to isolate a target-bonding layer from a processing region. In one embodiment, the target assembly comprises a backing plate, a target having a first surface and a second surface, and a bonding layer disposed between the backing plate and the second surface. The first surface of the target is in fluid contact with a processing region and the second surface of the target is oriented toward the backing plate. The target assembly may include multiple targets.

PVD target

Apparatus for supporting a substrate such as a semiconductor wafer in a process chamber to improve power coupling through the substrate. The apparatus contains a pedestal assembly and a pedestal cover positioned over the top surface of and circumscribing the pedestal assembly for electrically isolating the pedestal assembly. The pedestal cover reduces conductive film growth in the wafer process region. As such, RF wafer biasing power from the pedestal assembly remains coupled through the substrate during processing.

Process kit for improved power coupling through a workpiece in a semiconductor wafer processing system

A partial turn coil disposed in a semiconductor fabrication chamber for generating a plasma and sputter depositing coil material onto a substrate can exhibit reduced RF voltages.

Partial turn coil for generating a plasma

Apparatus for improved power coupling through a workpiece in a semiconductor wafer processing system

In a plasma deposition system for depositing a film of sputtered target material on a substrate, the output of an RF generator coupled to a coil for generating a plasma can be varied during the deposition process so that heating and sputtering of the RF coil can be more uniform by &ldquo;time-averaging&rdquo; RF voltage distributions along the RF coil.

Use of variable RF generator to control coil voltage distribution

Growing community of inventors

Monte Sereno, CA, United States of America

Bradley Owen Stimson