Cree Gmbh

Wolfspeed, Inc.

Bradley Millon

Sung Chul Joo

Donald Farrell

Erwin Cohen

Jack Powell

Simon Maurice Wood

Warren Brakensiek

Phil Saint-Erne

William Pribble

Packaged RF transistor amplifiers are provided that include a flat no-lead overmold package that includes a die pad, a plurality of terminal pads and an overmold encapsulation that at least partially covers the die pad and the terminal pads and an RF transistor amplifier die mounted on the die pad and at least partially covered by the overmold encapsulation. These packaged RF transistor amplifiers may have an output power density of at least 3.0 W/mm.

High output power density radio frequency transistor amplifiers in flat no-lead overmold packages

A system configured to increase a reliability of electrical connections in a device. The system including a lead configured to electrically connect a pad of at least one support structure to a pad of at least one electrical component. The lead includes an upper portion that includes a lower surface arranged on a lower surface thereof. The lower surface of the upper portion is arranged vertically above a first upper surface of a first pad connection portion; and the lower surface of the upper portion is arranged vertically above a second upper surface of the second pad connection portion. A process configured to increase a reliability of electrical connections in a device is also disclosed.

Systems and processes for increasing semiconductor device reliability

A device comprises a base, a die, leads, and an electrically-insulating die housing covering the die. The base comprises a die mounting section in which the die is mounted. The leads extend away from the die mounting section and are electrically connected to the die. The base further comprises a base mounting section and a recessed section. The recessed section comprises a recess between the die mounting section and the base mounting section. The base further comprises a first side, a second side opposing the first side, and a thickness measured between the first and second sides. The thickness of the base throughout the recessed section is less than the thickness of the base throughout the base mounting section. The base further comprises an opening extending at least through the base mounting section from the first side to the second side.

Robust electronics mounting device

The base of an integrated circuit package comprises a first side, and a second side opposing the first side. The base further comprises, a base mounting section, a die mounting section, and a recessed section. The recessed section comprises a recess between the die mounting section and the base mounting section. The base further comprises an opening extending through the base from the first side to the second side. At least a portion of the recess intersects with the opening.

Robust integrated circuit package

A packaged RF transistor device includes an RF transistor die including a plurality of RF transistor cells. Each of the plurality of RF transistor cells includes a control terminal and an output terminal. The RF transistor device further includes an RF input lead, and an input matching network coupled between the RF input lead and the RF transistor die. The input matching network includes a plurality of capacitors having respective input terminals. The input terminals of the capacitors are coupled to the control terminals of respective ones of the RF transistor cells. The input matching network further includes a plurality of resistors coupled respectively between adjacent input terminals of the capacitors.

RF transistor packages with internal stability network including intra-capacitor resistors and methods of forming RF transistor packages with internal stability networks including intra-capacitor resistors

Growing community of inventors

Durham, NC, United States of America

Bradley Millon