Advanced Micro Devices Corporation

Bradley Marc Davis

Craig William Christian

Allen Lewis Evans

Sey-Ping Sun

Shengnian Davis Song

The invention, in its various aspects and embodiments, is a method and apparatus for controlling the operation of a multi-chamber process tool in a semiconductor fabrication process. The method comprises setting a plurality of operation parameters for the conduct of a predetermined operation in each of a plurality of process chambers in a multi-chamber process tool; performing the predetermined operation in each of the process chambers; examining a physical characteristic of a processed wafer from each of the process chambers; determining from the examined physical characteristics whether the operating conditions in each of the process chambers match; and resetting at least one operating parameter so that the operating conditions in each of the process chambers will match. The apparatus comprises a processing tool, a review station, and a tool controller. The processing tool includes a plurality of process chambers and an operation controller. Each process chamber is capable of performing a predetermined operation defined by a plurality of operating parameters. The operation controller is capable of setting the operating parameter for each of the process chambers. The review station is capable of examining a physical characteristic of a processed wafer from each of the process chambers and outputting the results of the examination. The tool controller is capable of receiving the examination result, determining whether the operating parameters of the process chambers match, and instructing the operation controller to reset at least some of the operating parameters responsive thereto to match the operating conditions in the process chambers.

Control mechanism for matching process parameters in a multi-chamber process tool

A method for reducing deposition thickness variation in a processing tool comprises storing a post-clean performance model of the processing tool; receiving at least one of a showerhead age and a tool idle time associated with the processing tool as an input parameter; determining temperature control parameters based on the input parameter and the post-clean performance model; and modifying an operating recipe of the processing tool based on the temperature control parameters. A processing system includes a processing tool and an automatic process controller. The processing tool is adapted to process wafers in accordance with an operating recipe. The automatic process controller is adapted to store a post-clean performance model of the processing tool, receive at least one of a showerhead age and a tool idle time associated with the processing tool as an input parameter, determine temperature control parameters based on the input parameter and the post-clean performance model, and modify the operating recipe of the processing tool based on the temperature control parameters.

Method and apparatus for reducing deposition variation by modeling post-clean chamber performance

A processing line includes a processing tool, a measurement tool, and an automatic process controller. The processing tool is adapted to process articles. The measurement tool is adapted to measure a characteristic of selected articles at a measurement frequency. The automatic process controller is adapted to change the measurement frequency based on a usage characteristic of the processing tool. A method for monitoring a processing tool includes processing a plurality of articles in the processing tool; measuring a characteristic of selected articles at a measurement frequency; and changing the measurement frequency based on a usage characteristic of the processing tool.

Method and apparatus for determining measurement frequency based on hardware age and usage

A method is used by a semiconductor processing tool. The method comprises forming a first layer above a substrate layer, and forming an inorganic bottom antireflective coating layer above the first layer by introducing at least two gases at a preselected ratio into the semiconductor processing tools. A signal indicating that the semiconductor processing tool has been serviced is received, and the ratio of the gases is varied in response to receiving the signal to control optical parameters of the bottom antireflective coating layer to enhance subsequent photolithographic processes.

Method for controlling optical properties of antireflective coatings

A method is provided for determining the temperature of a semiconductor fabrication process in which a resistivity versus temperature calibration curve for a superlattice structure is created. A plurality of similar superlattice structures which include alternating layers of a conductor and a semiconductor may be annealed at different temperatures. The resistivity of each superlattice structure may then be measured after the superlattice structures have been cooled to room temperature in order to form the calibration curve. A similar superlattice structure may then be subjected to the temperature at which the semiconductor fabrication process is typically performed, causing the resistivity of the superlattice structure to change. Based on the resulting resistivity of the superlattice structure, the calibration curve may be used to determine the process temperature of the superlattice structure during the fabrication process. The length of time that the superlattice structure is subjected to the process temperature is selected to be the time duration of the process whose temperature is being determined. Once the actual process temperature is known, the temperature controls for the process may be adjusted in an attempt to reach the desired process temperature.

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Austin, TX, United States of America

Bradley Marc Davis