Sandia Corporation

The United States of America As Represented by the United States

Bradley K Smith

James G Fleming

Shawn-Yu Lin

Ned Allen Godshall

Dale R Koehler

Dale L Hetherington

Alan Y Liang

A method is disclosed for fabricating a two- or three-dimensional photonic bandgap structure (also termed a photonic crystal, photonic lattice, or photonic dielectric structure). The method uses microelectronic integrated circuit (IC) processes to fabricate the photonic bandgap structure directly upon a silicon substrate. One or more layers of arrayed elements used to form the structure are deposited and patterned, with chemical-mechanical polishing being used to planarize each layer for uniformity and a precise vertical tolerancing of the layer. The use of chemical-mechanical planarization allows the photonic bandgap structure to be formed over a large area with a layer uniformity of about two-percent. Air-gap photonic bandgap structures can also be formed by removing a spacer material separating the arrayed elements by selective etching. The method is useful for fabricating photonic bandgap structures including Fabry-Perot resonators and optical filters for use at wavelengths in the range of about 0.2-20 .mu.m.

Use of chemical-mechanical polishing for fabricating photonic bandgap

Providing a field emitter with an asymmetrical emitter structure having a very sharp tip in close proximity to its gate. One preferred embodiment of the present invention includes an asymmetrical emitter and a gate. The emitter having a tip and a side is coupled to a substrate. The gate is connected to a step in the substrate. The step has a top surface and a side wall that is substantially parallel to the side of the emitter. The tip of the emitter is in close proximity to the gate. The emitter is at an emitter potential, and the gate is at a gate potential such that with the two potentials at appropriate values, electrons are emitted from the emitter. In one embodiment, the gate is separated from the emitter by an oxide layer, and the emitter is etched anisotropically to form its tip and its asymmetrical structure.

Asymmetrical field emitter

A micro-machined resonator, typically quartz, with upper and lower micro-machinable support members, or covers, having etched wells which may be lined with conductive electrode material, between the support members is a quartz resonator having an energy trapping quartz mesa capacitively coupled to the electrode through a diaphragm; the quartz resonator is supported by either micro-machined cantilever springs or by thin layers extending over the surfaces of the support. If the diaphragm is rigid, clock applications are available, and if the diaphragm is resilient, then transducer applications can be achieved. Either the thin support layers or the conductive electrode material can be integral with the diaphragm. In any event, the covers are bonded to form a hermetic seal and the interior volume may be filled with a gas or may be evacuated. In addition, one or both of the covers may include oscillator and interface circuitry for the resonator.

Micro-machined resonator

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Albuquerque, NM, United States of America

Bradley K Smith