Versum Materials Us, LLC

Arizona State University

Bradley James Brennan

Matthias Stender

Agnes Derecskei

Ana L Moore

Thomas A Moore

John Devens Gust, Jr

Paul Anthony Liddell

Miguel Andres Gervaldo

James Ward Bridgewater

This invention pertains to compositions, methods and systems that can be used in chemical mechanical planarization (CMP) of a tungsten containing semiconductor device. CMP slurries comprising bicyclic amidine additives provide low dishing and low erosion topography.

Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography

Compounds with aryl ring(s) at porphyrin meso position(s) bearing an amino group in position 4 relative to the porphyrin macrocycle, and at least one unsubstituted 5 (hydrogen-bearing) meso position with the 10-, 15-, and/or 20-relationship to the aryl ring bearing the amino group, and metal complexes thereof, feature broad spectral absorption throughout the visible region. These compounds are electropolymerized to form electrically conducting porphyrin and porphyrin-fullerene polymers that are useful in photovoltaic applications. The structure of one such electrically conducting porphyrin polymer is shown below. 

Electrically conducting porphyrin and porphyrin-fullerene electropolymers

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Omaha, NE, United States of America

Bradley James Brennan